Investigation of InGaN/GaN laser degradation based on luminescence properties

Degradation of InGaN/GaN laser diode (LD) is investigated based on the luminescence properties. Gradual degradation of the LD is presented with the threshold current increase and the slope efficiency decrease. The cathodoluminescence and photoluminescence characterizations of the LD show a dislocati...

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Veröffentlicht in:	Journal of applied physics 2016-06, Vol.119 (21)
Hauptverfasser:	Wen, Pengyan, Zhang, Shuming, Liu, Jianping, Li, Deyao, Zhang, Liqun, Sun, Qian, Tian, Aiqin, Zhou, Kun, Zhou, Taofei, Yang, Hui
Format:	Artikel
Sprache:	eng
Schlagworte:	ACTIVATION ENERGY Applied physics CATHODOLUMINESCENCE CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY Degradation DIODE-PUMPED SOLID STATE LASERS DISLOCATIONS ELECTROLUMINESCENCE GALLIUM NITRIDES INDIUM Indium gallium nitrides INDIUM NITRIDES Luminescence Optical properties PHOTOLUMINESCENCE QUANTUM WELLS Radiative recombination RECOMBINATION Semiconductor lasers TEMPERATURE DEPENDENCE THRESHOLD CURRENT Threshold currents
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