Wide bandgap, strain-balanced quantum well tunnel junctions on InP substrates
In this work, the electrical performance of strain-balanced quantum well tunnel junctions with varying designs is presented. Strain-balanced quantum well tunnel junctions comprising compressively strained InAlAs wells and tensile-strained InAlAs barriers were grown on InP substrates using solid-sour...
Gespeichert in:
| Veröffentlicht in: | Journal of applied physics 2016-05, Vol.119 (19) |
|---|---|
| Hauptverfasser: | , , , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | 19 |
| container_start_page | |
| container_title | Journal of applied physics |
| container_volume | 119 |
| creator | Lumb, M. P. Yakes, M. K. González, M. Bennett, M. F. Schmieder, K. J. Affouda, C. A. Herrera, M. Delgado, F. J. Molina, S. I. Walters, R. J. |
| description | In this work, the electrical performance of strain-balanced quantum well tunnel junctions with varying designs is presented. Strain-balanced quantum well tunnel junctions comprising compressively strained InAlAs wells and tensile-strained InAlAs barriers were grown on InP substrates using solid-source molecular beam epitaxy. The use of InAlAs enables InP-based tunnel junction devices to be produced using wide bandgap layers, enabling high electrical performance with low absorption. The impact of well and barrier thickness on the electrical performance was investigated, in addition to the impact of Si and Be doping concentration. Finally, the impact of an InGaAs quantum well at the junction interface is presented, enabling a peak tunnel current density of 47.6 A/cm2 to be realized. |
| doi_str_mv | 10.1063/1.4948958 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_scita</sourceid><recordid>TN_cdi_scitation_primary_10_1063_1_4948958</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2121804495</sourcerecordid><originalsourceid>FETCH-LOGICAL-c389t-75147195da2f29936df41940adcdc2f8cada8563bd8810faeb5a731d8bf79ec33</originalsourceid><addsrcrecordid>eNqd0D1PwzAQBmALgUQpDPwDCyYQKb7YaewRVXxJRTCAGC3HH5AqtdPYAfHvSdRK7Ey3PHf36kXoFMgMyJxew4wJxkXB99AECBdZWRRkH00IySHjohSH6CjGFSEAnIoJenqvjcWV8uZDtVc4pk7VPqtUo7y2Bm965VO_xt-2aXDqvbcNXvVepzr4iIPHj_4Fx74a95KNx-jAqSbak92core729fFQ7Z8vn9c3CwzTblIQyZgJYjCqNzlQtC5cQwEI8poo3PHtTKKF3NaGc6BOGWrQpUUDK9cKaymdIrOtndDTLWMuk5Wf-owxNNJAsuBiHJA51vUdmHT25jkKvSdH3LJHHLghDFRDOpiq3QXYuysk21Xr1X3I4HIsVIJclfpYC-3dvyoxg7-h79C9wdlaxz9Bb8rhHk</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2121804495</pqid></control><display><type>article</type><title>Wide bandgap, strain-balanced quantum well tunnel junctions on InP substrates</title><source>AIP Journals Complete</source><source>Alma/SFX Local Collection</source><creator>Lumb, M. P. ; Yakes, M. K. ; González, M. ; Bennett, M. F. ; Schmieder, K. J. ; Affouda, C. A. ; Herrera, M. ; Delgado, F. J. ; Molina, S. I. ; Walters, R. J.</creator><creatorcontrib>Lumb, M. P. ; Yakes, M. K. ; González, M. ; Bennett, M. F. ; Schmieder, K. J. ; Affouda, C. A. ; Herrera, M. ; Delgado, F. J. ; Molina, S. I. ; Walters, R. J.</creatorcontrib><description>In this work, the electrical performance of strain-balanced quantum well tunnel junctions with varying designs is presented. Strain-balanced quantum well tunnel junctions comprising compressively strained InAlAs wells and tensile-strained InAlAs barriers were grown on InP substrates using solid-source molecular beam epitaxy. The use of InAlAs enables InP-based tunnel junction devices to be produced using wide bandgap layers, enabling high electrical performance with low absorption. The impact of well and barrier thickness on the electrical performance was investigated, in addition to the impact of Si and Be doping concentration. Finally, the impact of an InGaAs quantum well at the junction interface is presented, enabling a peak tunnel current density of 47.6 A/cm2 to be realized.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.4948958</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Electrical junctions ; Energy gap ; Epitaxial growth ; Indium aluminum arsenides ; Indium phosphides ; Molecular beam epitaxy ; Quantum wells ; Substrates ; Tunnel junctions</subject><ispartof>Journal of applied physics, 2016-05, Vol.119 (19)</ispartof><rights>Author(s)</rights><rights>2016 Author(s). Published by AIP Publishing.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c389t-75147195da2f29936df41940adcdc2f8cada8563bd8810faeb5a731d8bf79ec33</citedby><cites>FETCH-LOGICAL-c389t-75147195da2f29936df41940adcdc2f8cada8563bd8810faeb5a731d8bf79ec33</cites><orcidid>0000-0002-0995-5650 ; 0000-0002-5221-2852 ; 0000000252212852 ; 0000000209955650</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/jap/article-lookup/doi/10.1063/1.4948958$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>230,314,780,784,794,885,4512,27924,27925,76384</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/1421097$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Lumb, M. P.</creatorcontrib><creatorcontrib>Yakes, M. K.</creatorcontrib><creatorcontrib>González, M.</creatorcontrib><creatorcontrib>Bennett, M. F.</creatorcontrib><creatorcontrib>Schmieder, K. J.</creatorcontrib><creatorcontrib>Affouda, C. A.</creatorcontrib><creatorcontrib>Herrera, M.</creatorcontrib><creatorcontrib>Delgado, F. J.</creatorcontrib><creatorcontrib>Molina, S. I.</creatorcontrib><creatorcontrib>Walters, R. J.</creatorcontrib><title>Wide bandgap, strain-balanced quantum well tunnel junctions on InP substrates</title><title>Journal of applied physics</title><description>In this work, the electrical performance of strain-balanced quantum well tunnel junctions with varying designs is presented. Strain-balanced quantum well tunnel junctions comprising compressively strained InAlAs wells and tensile-strained InAlAs barriers were grown on InP substrates using solid-source molecular beam epitaxy. The use of InAlAs enables InP-based tunnel junction devices to be produced using wide bandgap layers, enabling high electrical performance with low absorption. The impact of well and barrier thickness on the electrical performance was investigated, in addition to the impact of Si and Be doping concentration. Finally, the impact of an InGaAs quantum well at the junction interface is presented, enabling a peak tunnel current density of 47.6 A/cm2 to be realized.</description><subject>Applied physics</subject><subject>Electrical junctions</subject><subject>Energy gap</subject><subject>Epitaxial growth</subject><subject>Indium aluminum arsenides</subject><subject>Indium phosphides</subject><subject>Molecular beam epitaxy</subject><subject>Quantum wells</subject><subject>Substrates</subject><subject>Tunnel junctions</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><recordid>eNqd0D1PwzAQBmALgUQpDPwDCyYQKb7YaewRVXxJRTCAGC3HH5AqtdPYAfHvSdRK7Ey3PHf36kXoFMgMyJxew4wJxkXB99AECBdZWRRkH00IySHjohSH6CjGFSEAnIoJenqvjcWV8uZDtVc4pk7VPqtUo7y2Bm965VO_xt-2aXDqvbcNXvVepzr4iIPHj_4Fx74a95KNx-jAqSbak92core729fFQ7Z8vn9c3CwzTblIQyZgJYjCqNzlQtC5cQwEI8poo3PHtTKKF3NaGc6BOGWrQpUUDK9cKaymdIrOtndDTLWMuk5Wf-owxNNJAsuBiHJA51vUdmHT25jkKvSdH3LJHHLghDFRDOpiq3QXYuysk21Xr1X3I4HIsVIJclfpYC-3dvyoxg7-h79C9wdlaxz9Bb8rhHk</recordid><startdate>20160521</startdate><enddate>20160521</enddate><creator>Lumb, M. P.</creator><creator>Yakes, M. K.</creator><creator>González, M.</creator><creator>Bennett, M. F.</creator><creator>Schmieder, K. J.</creator><creator>Affouda, C. A.</creator><creator>Herrera, M.</creator><creator>Delgado, F. J.</creator><creator>Molina, S. I.</creator><creator>Walters, R. J.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>OTOTI</scope><orcidid>https://orcid.org/0000-0002-0995-5650</orcidid><orcidid>https://orcid.org/0000-0002-5221-2852</orcidid><orcidid>https://orcid.org/0000000252212852</orcidid><orcidid>https://orcid.org/0000000209955650</orcidid></search><sort><creationdate>20160521</creationdate><title>Wide bandgap, strain-balanced quantum well tunnel junctions on InP substrates</title><author>Lumb, M. P. ; Yakes, M. K. ; González, M. ; Bennett, M. F. ; Schmieder, K. J. ; Affouda, C. A. ; Herrera, M. ; Delgado, F. J. ; Molina, S. I. ; Walters, R. J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c389t-75147195da2f29936df41940adcdc2f8cada8563bd8810faeb5a731d8bf79ec33</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>Applied physics</topic><topic>Electrical junctions</topic><topic>Energy gap</topic><topic>Epitaxial growth</topic><topic>Indium aluminum arsenides</topic><topic>Indium phosphides</topic><topic>Molecular beam epitaxy</topic><topic>Quantum wells</topic><topic>Substrates</topic><topic>Tunnel junctions</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lumb, M. P.</creatorcontrib><creatorcontrib>Yakes, M. K.</creatorcontrib><creatorcontrib>González, M.</creatorcontrib><creatorcontrib>Bennett, M. F.</creatorcontrib><creatorcontrib>Schmieder, K. J.</creatorcontrib><creatorcontrib>Affouda, C. A.</creatorcontrib><creatorcontrib>Herrera, M.</creatorcontrib><creatorcontrib>Delgado, F. J.</creatorcontrib><creatorcontrib>Molina, S. I.</creatorcontrib><creatorcontrib>Walters, R. J.</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>OSTI.GOV</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lumb, M. P.</au><au>Yakes, M. K.</au><au>González, M.</au><au>Bennett, M. F.</au><au>Schmieder, K. J.</au><au>Affouda, C. A.</au><au>Herrera, M.</au><au>Delgado, F. J.</au><au>Molina, S. I.</au><au>Walters, R. J.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Wide bandgap, strain-balanced quantum well tunnel junctions on InP substrates</atitle><jtitle>Journal of applied physics</jtitle><date>2016-05-21</date><risdate>2016</risdate><volume>119</volume><issue>19</issue><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>In this work, the electrical performance of strain-balanced quantum well tunnel junctions with varying designs is presented. Strain-balanced quantum well tunnel junctions comprising compressively strained InAlAs wells and tensile-strained InAlAs barriers were grown on InP substrates using solid-source molecular beam epitaxy. The use of InAlAs enables InP-based tunnel junction devices to be produced using wide bandgap layers, enabling high electrical performance with low absorption. The impact of well and barrier thickness on the electrical performance was investigated, in addition to the impact of Si and Be doping concentration. Finally, the impact of an InGaAs quantum well at the junction interface is presented, enabling a peak tunnel current density of 47.6 A/cm2 to be realized.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4948958</doi><tpages>7</tpages><orcidid>https://orcid.org/0000-0002-0995-5650</orcidid><orcidid>https://orcid.org/0000-0002-5221-2852</orcidid><orcidid>https://orcid.org/0000000252212852</orcidid><orcidid>https://orcid.org/0000000209955650</orcidid><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0021-8979 |
| ispartof | Journal of applied physics, 2016-05, Vol.119 (19) |
| issn | 0021-8979 1089-7550 |
| language | eng |
| recordid | cdi_scitation_primary_10_1063_1_4948958 |
| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | Applied physics Electrical junctions Energy gap Epitaxial growth Indium aluminum arsenides Indium phosphides Molecular beam epitaxy Quantum wells Substrates Tunnel junctions |
| title | Wide bandgap, strain-balanced quantum well tunnel junctions on InP substrates |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-04T18%3A39%3A32IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_scita&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Wide%20bandgap,%20strain-balanced%20quantum%20well%20tunnel%20junctions%20on%20InP%20substrates&rft.jtitle=Journal%20of%20applied%20physics&rft.au=Lumb,%20M.%20P.&rft.date=2016-05-21&rft.volume=119&rft.issue=19&rft.issn=0021-8979&rft.eissn=1089-7550&rft.coden=JAPIAU&rft_id=info:doi/10.1063/1.4948958&rft_dat=%3Cproquest_scita%3E2121804495%3C/proquest_scita%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2121804495&rft_id=info:pmid/&rfr_iscdi=true |