Optical and microwave properties of CaBi4Ti4O15 ferroelectric thin films deposited by pulsed laser deposition
Transparent CaBi4Ti4O15 (CBTi) ferroelectric thin films are deposited by pulsed laser deposition method. The structural, optical and microwave dielectric properties were investigated. CBTi thin films had polycrystalline bismuth-layered perovskite structure and exhibited excellent optical properties....
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creator | Emani, Sivanagi Reddy Joseph, Andrews Raju, K. C. James |
description | Transparent CaBi4Ti4O15 (CBTi) ferroelectric thin films are deposited by pulsed laser deposition method. The structural, optical and microwave dielectric properties were investigated. CBTi thin films had polycrystalline bismuth-layered perovskite structure and exhibited excellent optical properties. The X-ray analysis of the thin film demonstrates the phase formation and crystallinity. The optical transmission studies show that film is transparent in VIS-NIR region with a direct band gap of 3.53 EV. Morphological studies provide surface roughness as 3 mm. Dielectric constant and loss factors were 48 and 0.060 respectively, at 10GHz. These results suggest that CBTi thin films are promising multifunctional materials for applications in optoelectronic and microwave devices. |
doi_str_mv | 10.1063/1.4947893 |
format | Conference Proceeding |
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C. James</creator><contributor>Bhattacharya, Shovit ; Chitra, R. ; Sahoo, N. K.</contributor><creatorcontrib>Emani, Sivanagi Reddy ; Joseph, Andrews ; Raju, K. C. James ; Bhattacharya, Shovit ; Chitra, R. ; Sahoo, N. K.</creatorcontrib><description>Transparent CaBi4Ti4O15 (CBTi) ferroelectric thin films are deposited by pulsed laser deposition method. The structural, optical and microwave dielectric properties were investigated. CBTi thin films had polycrystalline bismuth-layered perovskite structure and exhibited excellent optical properties. The X-ray analysis of the thin film demonstrates the phase formation and crystallinity. The optical transmission studies show that film is transparent in VIS-NIR region with a direct band gap of 3.53 EV. Morphological studies provide surface roughness as 3 mm. Dielectric constant and loss factors were 48 and 0.060 respectively, at 10GHz. These results suggest that CBTi thin films are promising multifunctional materials for applications in optoelectronic and microwave devices.</description><identifier>ISSN: 0094-243X</identifier><identifier>EISSN: 1551-7616</identifier><identifier>DOI: 10.1063/1.4947893</identifier><identifier>CODEN: APCPCS</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Bismuth ; Dielectric properties ; Ferroelectric materials ; Ferroelectricity ; Multifunctional materials ; Optical properties ; Optoelectronic devices ; Perovskite structure ; Perovskites ; Pulsed laser deposition ; Pulsed lasers ; Silicon ; Surface roughness ; Thin films ; X ray analysis</subject><ispartof>AIP conference proceedings, 2016, Vol.1731 (1)</ispartof><rights>Author(s)</rights><rights>2016 Author(s). 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James</creatorcontrib><title>Optical and microwave properties of CaBi4Ti4O15 ferroelectric thin films deposited by pulsed laser deposition</title><title>AIP conference proceedings</title><description>Transparent CaBi4Ti4O15 (CBTi) ferroelectric thin films are deposited by pulsed laser deposition method. The structural, optical and microwave dielectric properties were investigated. CBTi thin films had polycrystalline bismuth-layered perovskite structure and exhibited excellent optical properties. The X-ray analysis of the thin film demonstrates the phase formation and crystallinity. The optical transmission studies show that film is transparent in VIS-NIR region with a direct band gap of 3.53 EV. Morphological studies provide surface roughness as 3 mm. Dielectric constant and loss factors were 48 and 0.060 respectively, at 10GHz. These results suggest that CBTi thin films are promising multifunctional materials for applications in optoelectronic and microwave devices.</description><subject>Bismuth</subject><subject>Dielectric properties</subject><subject>Ferroelectric materials</subject><subject>Ferroelectricity</subject><subject>Multifunctional materials</subject><subject>Optical properties</subject><subject>Optoelectronic devices</subject><subject>Perovskite structure</subject><subject>Perovskites</subject><subject>Pulsed laser deposition</subject><subject>Pulsed lasers</subject><subject>Silicon</subject><subject>Surface roughness</subject><subject>Thin films</subject><subject>X ray analysis</subject><issn>0094-243X</issn><issn>1551-7616</issn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2016</creationdate><recordtype>conference_proceeding</recordtype><recordid>eNp9kE1LAzEQhoMoWKsH_0HAm7A1n5vkqMUvKPRSwVvIZhNM2W3WJK3037vSijdPM_A-M_POC8A1RjOManqHZ0wxIRU9ARPMOa5EjetTMEFIsYow-n4OLnJeI0SUEHIC-uVQgjUdNJsW9sGm-GV2Dg4pDi6V4DKMHs7NQ2CrwJaYQ-9Siq5ztqRgYfkIG-hD12fYuiHmUFwLmz0ctl0eu85kl36VEDeX4MybUbk61il4e3pczV-qxfL5dX6_qCxRtFS-bpxpPcFS1FKZ2hnuhbfSkdZQhXzDDWeYeSZUQ5lknMuG1Ewqby0SFtEpuDnsHf_43Lpc9Dpu02Y8qQkmWCiBEBup2wOVbSjmx58eUuhN2utdTBrrY5R6aP1_MEb6J_u_AfoNVyB3Dg</recordid><startdate>20160523</startdate><enddate>20160523</enddate><creator>Emani, Sivanagi Reddy</creator><creator>Joseph, Andrews</creator><creator>Raju, K. C. James</creator><general>American Institute of Physics</general><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20160523</creationdate><title>Optical and microwave properties of CaBi4Ti4O15 ferroelectric thin films deposited by pulsed laser deposition</title><author>Emani, Sivanagi Reddy ; Joseph, Andrews ; Raju, K. C. James</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c293t-f6beadf2187689a6ea5f7fc8e2da390fb5a5414f479b3484558b26489fcc07c03</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2016</creationdate><topic>Bismuth</topic><topic>Dielectric properties</topic><topic>Ferroelectric materials</topic><topic>Ferroelectricity</topic><topic>Multifunctional materials</topic><topic>Optical properties</topic><topic>Optoelectronic devices</topic><topic>Perovskite structure</topic><topic>Perovskites</topic><topic>Pulsed laser deposition</topic><topic>Pulsed lasers</topic><topic>Silicon</topic><topic>Surface roughness</topic><topic>Thin films</topic><topic>X ray analysis</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Emani, Sivanagi Reddy</creatorcontrib><creatorcontrib>Joseph, Andrews</creatorcontrib><creatorcontrib>Raju, K. C. James</creatorcontrib><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Emani, Sivanagi Reddy</au><au>Joseph, Andrews</au><au>Raju, K. C. James</au><au>Bhattacharya, Shovit</au><au>Chitra, R.</au><au>Sahoo, N. K.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Optical and microwave properties of CaBi4Ti4O15 ferroelectric thin films deposited by pulsed laser deposition</atitle><btitle>AIP conference proceedings</btitle><date>2016-05-23</date><risdate>2016</risdate><volume>1731</volume><issue>1</issue><issn>0094-243X</issn><eissn>1551-7616</eissn><coden>APCPCS</coden><abstract>Transparent CaBi4Ti4O15 (CBTi) ferroelectric thin films are deposited by pulsed laser deposition method. The structural, optical and microwave dielectric properties were investigated. CBTi thin films had polycrystalline bismuth-layered perovskite structure and exhibited excellent optical properties. The X-ray analysis of the thin film demonstrates the phase formation and crystallinity. The optical transmission studies show that film is transparent in VIS-NIR region with a direct band gap of 3.53 EV. Morphological studies provide surface roughness as 3 mm. Dielectric constant and loss factors were 48 and 0.060 respectively, at 10GHz. These results suggest that CBTi thin films are promising multifunctional materials for applications in optoelectronic and microwave devices.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4947893</doi><tpages>3</tpages></addata></record> |
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language | eng |
recordid | cdi_scitation_primary_10_1063_1_4947893 |
source | AIP Journals Complete |
subjects | Bismuth Dielectric properties Ferroelectric materials Ferroelectricity Multifunctional materials Optical properties Optoelectronic devices Perovskite structure Perovskites Pulsed laser deposition Pulsed lasers Silicon Surface roughness Thin films X ray analysis |
title | Optical and microwave properties of CaBi4Ti4O15 ferroelectric thin films deposited by pulsed laser deposition |
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