Electrical limit of silver nanowire electrodes: Direct measurement of the nanowire junction resistance
We measure basic network parameters of silver nanowire (AgNW) networks commonly used as transparent conducting electrodes in organic optoelectronic devices. By means of four point probing with nanoprobes, the wire-to-wire junction resistance and the resistance of single nanowires are measured. The r...
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creator | Selzer, Franz Floresca, Carlo Kneppe, David Bormann, Ludwig Sachse, Christoph Weiß, Nelli Eychmüller, Alexander Amassian, Aram Müller-Meskamp, Lars Leo, Karl |
description | We measure basic network parameters of silver nanowire (AgNW) networks commonly used as transparent conducting electrodes in organic optoelectronic devices. By means of four point probing with nanoprobes, the wire-to-wire junction resistance and the resistance of single nanowires are measured. The resistance
R
NW
of a single nanowire shows a value of
R
NW
=
(
4.96
±
0.18
)
Ω
/
μ
m
. The junction resistance R
J differs for annealed and non-annealed NW networks, exhibiting values of
R
J
=
(
25.2
±
1.9
)
Ω
(annealed) and
R
J
=
(
529
±
239
)
Ω
(non-annealed), respectively. Our simulation achieves a good agreement between the measured network parameters and the sheet resistance R
S of the entire network. Extrapolating R
J to zero, our study show that we are close to the electrical limit of the conductivity of our AgNW system: We obtain a possible R
S reduction by only
≈
20
%
(common
R
S
≈
10
Ω
/
sq
). Therefore, we expect further performance improvements in AgNW systems mainly by increasing NW length or by utilizing novel network geometries. |
doi_str_mv | 10.1063/1.4947285 |
format | Article |
fullrecord | <record><control><sourceid>proquest_scita</sourceid><recordid>TN_cdi_scitation_primary_10_1063_1_4947285</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2121816462</sourcerecordid><originalsourceid>FETCH-LOGICAL-c393t-ee2729ef752339a01818c1b255cb54189ee2f6db7e5d67b7db0f77cfcbf3256f3</originalsourceid><addsrcrecordid>eNp90EtLAzEQB_AgCtbqwW8Q8KSwNY_NZteb1PqAghc9h2x2ginbTU2yFb-92wf2IHgKE375z2QQuqRkQknBb-kkr3LJSnGERpRImXFKy2M0IoTwrKgEPUVnMS6GUjDOR8jOWjApOKNb3LqlS9hbHF27hoA73fkvFwDD1vgG4h1-GC5MwkvQsQ-whG77In3AgS_6ziTnOxwguph0Z-AcnVjdRrjYn2P0_jh7mz5n89enl-n9PDO84ikDYJJVYOVmuEoTWtLS0JoJYWqR07IagC2aWoJoClnLpiZWSmNNbTkTheVjdLXLXQX_2UNMauH70A0tFaNsiCvygg3qeqdM8DEGsGoV3FKHb0WJ2qxRUbVf42BvdjYal_TmW7947cMBqlVj_8N_k38AaoaCag</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2121816462</pqid></control><display><type>article</type><title>Electrical limit of silver nanowire electrodes: Direct measurement of the nanowire junction resistance</title><source>AIP Journals Complete</source><source>Alma/SFX Local Collection</source><creator>Selzer, Franz ; Floresca, Carlo ; Kneppe, David ; Bormann, Ludwig ; Sachse, Christoph ; Weiß, Nelli ; Eychmüller, Alexander ; Amassian, Aram ; Müller-Meskamp, Lars ; Leo, Karl</creator><creatorcontrib>Selzer, Franz ; Floresca, Carlo ; Kneppe, David ; Bormann, Ludwig ; Sachse, Christoph ; Weiß, Nelli ; Eychmüller, Alexander ; Amassian, Aram ; Müller-Meskamp, Lars ; Leo, Karl</creatorcontrib><description>We measure basic network parameters of silver nanowire (AgNW) networks commonly used as transparent conducting electrodes in organic optoelectronic devices. By means of four point probing with nanoprobes, the wire-to-wire junction resistance and the resistance of single nanowires are measured. The resistance
R
NW
of a single nanowire shows a value of
R
NW
=
(
4.96
±
0.18
)
Ω
/
μ
m
. The junction resistance R
J differs for annealed and non-annealed NW networks, exhibiting values of
R
J
=
(
25.2
±
1.9
)
Ω
(annealed) and
R
J
=
(
529
±
239
)
Ω
(non-annealed), respectively. Our simulation achieves a good agreement between the measured network parameters and the sheet resistance R
S of the entire network. Extrapolating R
J to zero, our study show that we are close to the electrical limit of the conductivity of our AgNW system: We obtain a possible R
S reduction by only
≈
20
%
(common
R
S
≈
10
Ω
/
sq
). Therefore, we expect further performance improvements in AgNW systems mainly by increasing NW length or by utilizing novel network geometries.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4947285</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Annealing ; Applied physics ; Electric wire ; Electrical resistivity ; Electrodes ; Nanowires ; Optoelectronic devices ; Parameters</subject><ispartof>Applied physics letters, 2016-04, Vol.108 (16)</ispartof><rights>Author(s)</rights><rights>2016 Author(s). Published by AIP Publishing.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c393t-ee2729ef752339a01818c1b255cb54189ee2f6db7e5d67b7db0f77cfcbf3256f3</citedby><cites>FETCH-LOGICAL-c393t-ee2729ef752339a01818c1b255cb54189ee2f6db7e5d67b7db0f77cfcbf3256f3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.4947285$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,776,780,790,4498,27901,27902,76353</link.rule.ids></links><search><creatorcontrib>Selzer, Franz</creatorcontrib><creatorcontrib>Floresca, Carlo</creatorcontrib><creatorcontrib>Kneppe, David</creatorcontrib><creatorcontrib>Bormann, Ludwig</creatorcontrib><creatorcontrib>Sachse, Christoph</creatorcontrib><creatorcontrib>Weiß, Nelli</creatorcontrib><creatorcontrib>Eychmüller, Alexander</creatorcontrib><creatorcontrib>Amassian, Aram</creatorcontrib><creatorcontrib>Müller-Meskamp, Lars</creatorcontrib><creatorcontrib>Leo, Karl</creatorcontrib><title>Electrical limit of silver nanowire electrodes: Direct measurement of the nanowire junction resistance</title><title>Applied physics letters</title><description>We measure basic network parameters of silver nanowire (AgNW) networks commonly used as transparent conducting electrodes in organic optoelectronic devices. By means of four point probing with nanoprobes, the wire-to-wire junction resistance and the resistance of single nanowires are measured. The resistance
R
NW
of a single nanowire shows a value of
R
NW
=
(
4.96
±
0.18
)
Ω
/
μ
m
. The junction resistance R
J differs for annealed and non-annealed NW networks, exhibiting values of
R
J
=
(
25.2
±
1.9
)
Ω
(annealed) and
R
J
=
(
529
±
239
)
Ω
(non-annealed), respectively. Our simulation achieves a good agreement between the measured network parameters and the sheet resistance R
S of the entire network. Extrapolating R
J to zero, our study show that we are close to the electrical limit of the conductivity of our AgNW system: We obtain a possible R
S reduction by only
≈
20
%
(common
R
S
≈
10
Ω
/
sq
). Therefore, we expect further performance improvements in AgNW systems mainly by increasing NW length or by utilizing novel network geometries.</description><subject>Annealing</subject><subject>Applied physics</subject><subject>Electric wire</subject><subject>Electrical resistivity</subject><subject>Electrodes</subject><subject>Nanowires</subject><subject>Optoelectronic devices</subject><subject>Parameters</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><recordid>eNp90EtLAzEQB_AgCtbqwW8Q8KSwNY_NZteb1PqAghc9h2x2ginbTU2yFb-92wf2IHgKE375z2QQuqRkQknBb-kkr3LJSnGERpRImXFKy2M0IoTwrKgEPUVnMS6GUjDOR8jOWjApOKNb3LqlS9hbHF27hoA73fkvFwDD1vgG4h1-GC5MwkvQsQ-whG77In3AgS_6ziTnOxwguph0Z-AcnVjdRrjYn2P0_jh7mz5n89enl-n9PDO84ikDYJJVYOVmuEoTWtLS0JoJYWqR07IagC2aWoJoClnLpiZWSmNNbTkTheVjdLXLXQX_2UNMauH70A0tFaNsiCvygg3qeqdM8DEGsGoV3FKHb0WJ2qxRUbVf42BvdjYal_TmW7947cMBqlVj_8N_k38AaoaCag</recordid><startdate>20160418</startdate><enddate>20160418</enddate><creator>Selzer, Franz</creator><creator>Floresca, Carlo</creator><creator>Kneppe, David</creator><creator>Bormann, Ludwig</creator><creator>Sachse, Christoph</creator><creator>Weiß, Nelli</creator><creator>Eychmüller, Alexander</creator><creator>Amassian, Aram</creator><creator>Müller-Meskamp, Lars</creator><creator>Leo, Karl</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20160418</creationdate><title>Electrical limit of silver nanowire electrodes: Direct measurement of the nanowire junction resistance</title><author>Selzer, Franz ; Floresca, Carlo ; Kneppe, David ; Bormann, Ludwig ; Sachse, Christoph ; Weiß, Nelli ; Eychmüller, Alexander ; Amassian, Aram ; Müller-Meskamp, Lars ; Leo, Karl</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c393t-ee2729ef752339a01818c1b255cb54189ee2f6db7e5d67b7db0f77cfcbf3256f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>Annealing</topic><topic>Applied physics</topic><topic>Electric wire</topic><topic>Electrical resistivity</topic><topic>Electrodes</topic><topic>Nanowires</topic><topic>Optoelectronic devices</topic><topic>Parameters</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Selzer, Franz</creatorcontrib><creatorcontrib>Floresca, Carlo</creatorcontrib><creatorcontrib>Kneppe, David</creatorcontrib><creatorcontrib>Bormann, Ludwig</creatorcontrib><creatorcontrib>Sachse, Christoph</creatorcontrib><creatorcontrib>Weiß, Nelli</creatorcontrib><creatorcontrib>Eychmüller, Alexander</creatorcontrib><creatorcontrib>Amassian, Aram</creatorcontrib><creatorcontrib>Müller-Meskamp, Lars</creatorcontrib><creatorcontrib>Leo, Karl</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Selzer, Franz</au><au>Floresca, Carlo</au><au>Kneppe, David</au><au>Bormann, Ludwig</au><au>Sachse, Christoph</au><au>Weiß, Nelli</au><au>Eychmüller, Alexander</au><au>Amassian, Aram</au><au>Müller-Meskamp, Lars</au><au>Leo, Karl</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Electrical limit of silver nanowire electrodes: Direct measurement of the nanowire junction resistance</atitle><jtitle>Applied physics letters</jtitle><date>2016-04-18</date><risdate>2016</risdate><volume>108</volume><issue>16</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>We measure basic network parameters of silver nanowire (AgNW) networks commonly used as transparent conducting electrodes in organic optoelectronic devices. By means of four point probing with nanoprobes, the wire-to-wire junction resistance and the resistance of single nanowires are measured. The resistance
R
NW
of a single nanowire shows a value of
R
NW
=
(
4.96
±
0.18
)
Ω
/
μ
m
. The junction resistance R
J differs for annealed and non-annealed NW networks, exhibiting values of
R
J
=
(
25.2
±
1.9
)
Ω
(annealed) and
R
J
=
(
529
±
239
)
Ω
(non-annealed), respectively. Our simulation achieves a good agreement between the measured network parameters and the sheet resistance R
S of the entire network. Extrapolating R
J to zero, our study show that we are close to the electrical limit of the conductivity of our AgNW system: We obtain a possible R
S reduction by only
≈
20
%
(common
R
S
≈
10
Ω
/
sq
). Therefore, we expect further performance improvements in AgNW systems mainly by increasing NW length or by utilizing novel network geometries.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4947285</doi><tpages>4</tpages></addata></record> |
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source | AIP Journals Complete; Alma/SFX Local Collection |
subjects | Annealing Applied physics Electric wire Electrical resistivity Electrodes Nanowires Optoelectronic devices Parameters |
title | Electrical limit of silver nanowire electrodes: Direct measurement of the nanowire junction resistance |
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