Dielectric relaxation studies in Se90Cd8Sb2 glassy alloy

Se90Cd8Sb2 chalcogenide semiconducting alloy was prepared by melt quench technique. The prepared glassy alloy has been characterized by techniques such as scanning electron microscopy (SEM) and energy dispersive X-ray (EDAX).Dielectric properties of Se90Cd8Sb2 chalcogenide semiconductor have been st...

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Hauptverfasser: Shukla, Nitesh, Rao, Vandita, Dwivedi, D. K.
Format: Tagungsbericht
Sprache:eng
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Zusammenfassung:Se90Cd8Sb2 chalcogenide semiconducting alloy was prepared by melt quench technique. The prepared glassy alloy has been characterized by techniques such as scanning electron microscopy (SEM) and energy dispersive X-ray (EDAX).Dielectric properties of Se90Cd8Sb2 chalcogenide semiconductor have been studied using impedance spectroscopic technique in the frequency range 5×102Hz - 1×105Hz and in temperature range 303-318K. It is found that dielectric constant ε′ and dielectric loss factor ε″ are dependent on frequency and temperature.
ISSN:0094-243X
1551-7616
DOI:10.1063/1.4946434