Memcapacitive characteristics in reactive-metal (Mo, Al)/HfOX/n-Si structures through migration of oxygen by applied voltage

Memcapacitive characteristics were investigated in metal-oxide-semiconductor (MOS) structure of reactive electrode (Mo, Al) and hafnium oxide (HfOX) on n-type Si substrate. The capacitance-voltage curves exhibited sequentially changing capacitance with memory function as repeating voltage sweeps, fe...

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Veröffentlicht in:	Applied physics letters 2016-02, Vol.108 (5)
Hauptverfasser:	Yang, Paul, Noh, Young Jun, Baek, Yoon-Jae, Zheng, Hong, Kang, Chi Jung, Lee, Hyun Ho, Yoon, Tae-Sik
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum Applied physics Capacitance Electric potential Electrodes Hafnium oxide Metal oxides Migration Molybdenum Oxygen ions Silicon substrates
Online-Zugang:	Volltext
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