Electronic transport in heavily doped Ag/n-Si composite films

Hall measurements characterized Ag/n-Si composite films 1 micron thick produced by magnetron co-sputtering onto high resistivity Si (111) substrates at 550°C. The targets were Ag and n-type Si doped with 3 × 1019/cm3 of antimony. Films were prepared with 13, 16 and 22 at. % Ag and measured over a te...

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Veröffentlicht in:	AIP advances 2013-10, Vol.3 (10), p.102111-102111-15
Hauptverfasser:	Bates, Clayton W., Zhang, Chichang
Format:	Artikel
Sprache:	eng
Schlagworte:	ACTIVATION ENERGY ANTIMONY CARRIER DENSITY COMPOSITE MATERIALS CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY DOPED MATERIALS EFFICIENCY ELECTRIC CONDUCTIVITY FERMI LEVEL GALLIUM ARSENIDES GRAIN BOUNDARIES MAGNETRONS MATERIALS SCIENCE NANOSTRUCTURES PARTICLE SIZE PARTICLES POLYCRYSTALS SEMICONDUCTOR MATERIALS THIN FILMS
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