Electrical properties of HfO 2 /La 2 O 3 gate dielectrics on Ge with ultrathin nitride interfacial layer formed by in situ N 2 /H 2 /Ar radical pretreatment
In situ N 2 /H 2 /Ar radical pretreatment on p-type Ge (100) with HfO 2 /La 2 O 3 high-κ gate oxide was investigated by remote rf plasma on radical-assisted atomic layer deposition. The interfacial LaGeO x N y formation and Ge outdiffusion were also investigated by x-ray photoelectron spectroscopy a...
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| Veröffentlicht in: | Applied physics letters 2011-11, Vol.99 (18), p.182105-182105-3 |
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