Coherent heteroepitaxy of Bi 2 Se 3 on GaAs (111)B
We report the heteroepitaxy of single crystal thin films of Bi 2 Se 3 on the (111)B surface of GaAs by molecular beam epitaxy. We find that Bi 2 Se 3 grows highly c-axis oriented, with an atomically sharp interface with the GaAs substrate. By optimizing the growth of a very thin GaAs buffer layer be...
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| Veröffentlicht in: | Applied physics letters 2010-12, Vol.97 (26), p.262104-262104-3 |
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| container_end_page | 262104-3 |
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| container_issue | 26 |
| container_start_page | 262104 |
| container_title | Applied physics letters |
| container_volume | 97 |
| creator | Richardella, A. Zhang, D. M. Lee, J. S. Koser, A. Rench, D. W. Yeats, A. L. Buckley, B. B. Awschalom, D. D. Samarth, N. |
| description | We report the heteroepitaxy of single crystal thin films of
Bi
2
Se
3
on the (111)B surface of GaAs by molecular beam epitaxy. We find that
Bi
2
Se
3
grows highly c-axis oriented, with an atomically sharp interface with the GaAs substrate. By optimizing the growth of a very thin GaAs buffer layer before growing the
Bi
2
Se
3
, we demonstrate the growth of thin films with atomically flat terraces over hundreds of nanometers. Initial time-resolved Kerr rotation measurements herald opportunities for probing coherent spin dynamics at the interface between a candidate topological insulator and a large class of GaAs-based heterostructures. |
| doi_str_mv | 10.1063/1.3532845 |
| format | Article |
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Bi
2
Se
3
on the (111)B surface of GaAs by molecular beam epitaxy. We find that
Bi
2
Se
3
grows highly c-axis oriented, with an atomically sharp interface with the GaAs substrate. By optimizing the growth of a very thin GaAs buffer layer before growing the
Bi
2
Se
3
, we demonstrate the growth of thin films with atomically flat terraces over hundreds of nanometers. Initial time-resolved Kerr rotation measurements herald opportunities for probing coherent spin dynamics at the interface between a candidate topological insulator and a large class of GaAs-based heterostructures.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.3532845</identifier><identifier>CODEN: APPLAB</identifier><publisher>American Institute of Physics</publisher><ispartof>Applied physics letters, 2010-12, Vol.97 (26), p.262104-262104-3</ispartof><rights>2010 American Institute of Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-scitation_primary_10_1063_1_3532845Coherent_heteroepita3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.3532845$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,780,784,794,1559,4512,27924,27925,76384,76390</link.rule.ids></links><search><creatorcontrib>Richardella, A.</creatorcontrib><creatorcontrib>Zhang, D. M.</creatorcontrib><creatorcontrib>Lee, J. S.</creatorcontrib><creatorcontrib>Koser, A.</creatorcontrib><creatorcontrib>Rench, D. W.</creatorcontrib><creatorcontrib>Yeats, A. L.</creatorcontrib><creatorcontrib>Buckley, B. B.</creatorcontrib><creatorcontrib>Awschalom, D. D.</creatorcontrib><creatorcontrib>Samarth, N.</creatorcontrib><title>Coherent heteroepitaxy of Bi 2 Se 3 on GaAs (111)B</title><title>Applied physics letters</title><description>We report the heteroepitaxy of single crystal thin films of
Bi
2
Se
3
on the (111)B surface of GaAs by molecular beam epitaxy. We find that
Bi
2
Se
3
grows highly c-axis oriented, with an atomically sharp interface with the GaAs substrate. By optimizing the growth of a very thin GaAs buffer layer before growing the
Bi
2
Se
3
, we demonstrate the growth of thin films with atomically flat terraces over hundreds of nanometers. Initial time-resolved Kerr rotation measurements herald opportunities for probing coherent spin dynamics at the interface between a candidate topological insulator and a large class of GaAs-based heterostructures.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><sourceid/><recordid>eNqljjsLwjAUhYMoWB-D_-COOrTm9pq2LoItPnbdQ5CUVrQpSQf7761Qwd3pcIZzvo-xBfIAeURrDEhQmGzEgHnI49gnxGTIPM45-dFW4JhNnLt3VYREHgszU2irqwYK3WhrdF026tWCySEtIYSLBgJTwUntHSwRcZXO2ChXD6fnfU7Z7ni4Zmff3bptU5pK1rZ8KttK5PJjJVH2Vl-a_KHR3wdvwhZJlQ</recordid><startdate>20101228</startdate><enddate>20101228</enddate><creator>Richardella, A.</creator><creator>Zhang, D. M.</creator><creator>Lee, J. S.</creator><creator>Koser, A.</creator><creator>Rench, D. W.</creator><creator>Yeats, A. L.</creator><creator>Buckley, B. B.</creator><creator>Awschalom, D. D.</creator><creator>Samarth, N.</creator><general>American Institute of Physics</general><scope/></search><sort><creationdate>20101228</creationdate><title>Coherent heteroepitaxy of Bi 2 Se 3 on GaAs (111)B</title><author>Richardella, A. ; Zhang, D. M. ; Lee, J. S. ; Koser, A. ; Rench, D. W. ; Yeats, A. L. ; Buckley, B. B. ; Awschalom, D. D. ; Samarth, N.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-scitation_primary_10_1063_1_3532845Coherent_heteroepita3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><creationdate>2010</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Richardella, A.</creatorcontrib><creatorcontrib>Zhang, D. M.</creatorcontrib><creatorcontrib>Lee, J. S.</creatorcontrib><creatorcontrib>Koser, A.</creatorcontrib><creatorcontrib>Rench, D. W.</creatorcontrib><creatorcontrib>Yeats, A. L.</creatorcontrib><creatorcontrib>Buckley, B. B.</creatorcontrib><creatorcontrib>Awschalom, D. D.</creatorcontrib><creatorcontrib>Samarth, N.</creatorcontrib><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Richardella, A.</au><au>Zhang, D. M.</au><au>Lee, J. S.</au><au>Koser, A.</au><au>Rench, D. W.</au><au>Yeats, A. L.</au><au>Buckley, B. B.</au><au>Awschalom, D. D.</au><au>Samarth, N.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Coherent heteroepitaxy of Bi 2 Se 3 on GaAs (111)B</atitle><jtitle>Applied physics letters</jtitle><date>2010-12-28</date><risdate>2010</risdate><volume>97</volume><issue>26</issue><spage>262104</spage><epage>262104-3</epage><pages>262104-262104-3</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>We report the heteroepitaxy of single crystal thin films of
Bi
2
Se
3
on the (111)B surface of GaAs by molecular beam epitaxy. We find that
Bi
2
Se
3
grows highly c-axis oriented, with an atomically sharp interface with the GaAs substrate. By optimizing the growth of a very thin GaAs buffer layer before growing the
Bi
2
Se
3
, we demonstrate the growth of thin films with atomically flat terraces over hundreds of nanometers. Initial time-resolved Kerr rotation measurements herald opportunities for probing coherent spin dynamics at the interface between a candidate topological insulator and a large class of GaAs-based heterostructures.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.3532845</doi></addata></record> |
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| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2010-12, Vol.97 (26), p.262104-262104-3 |
| issn | 0003-6951 1077-3118 |
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| recordid | cdi_scitation_primary_10_1063_1_3532845Coherent_heteroepita |
| source | AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection |
| title | Coherent heteroepitaxy of Bi 2 Se 3 on GaAs (111)B |
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