Tunnel injection In 0.25 Ga 0.75 N / GaN quantum dot light-emitting diodes

Hole tunnel injection is incorporated in the design of In 0.25 Ga 0.75 N / GaN quantum dot light-emitting diodes with peak emission at λ ∼ 500   nm . Calculations show that cold holes are uniformly injected into all five quantum dot layers in the active region. Measurements were made on devices havi...

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Veröffentlicht in:	Applied physics letters 2010-12, Vol.97 (25), p.251107-251107-3
Hauptverfasser:	Bhattacharya, Pallab, Zhang, Meng, Hinckley, John
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