Trapping properties of LiNbO 3 / AlGaN / GaN metal-ferroelectric-semiconductor heterostructure characterized by temperaturedependent conductance measurements
The trapping properties of the ferroelectric LiNbO 3 / AlGaN / GaN heterostructure capacitors were characterized by temperature dependent capacitance and conductance measurements. In a wide temperature range (200-450 K), two kind of traps were identified by the conductance measurements. One is the i...
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| Veröffentlicht in: | Journal of applied physics 2010-04, Vol.107 (8), p.084508-084508-4 |
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| container_end_page | 084508-4 |
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| container_issue | 8 |
| container_start_page | 084508 |
| container_title | Journal of applied physics |
| container_volume | 107 |
| creator | Zeng, Huizhong Hao, Lanzhong Luo, Wenbo Liao, Xiuwei Huang, Wen Lin, Yuan Li, Yanrong |
| description | The trapping properties of the ferroelectric
LiNbO
3
/
AlGaN
/
GaN
heterostructure capacitors were characterized by temperature dependent capacitance and conductance measurements. In a wide temperature range (200-450 K), two kind of traps were identified by the conductance measurements. One is the interface trap with the density of
1.1
×
10
12
to
1.4
×
10
10
cm
−
2
eV
−
1
which shows an exponential dependency of time constant on the bias applied to the heterostructure. The other is the bulk trap with a lower density, about
(
1
−
4
)
×
10
10
cm
−
2
eV
−
1
, which manifests at higher temperatures. The measured time constant of bulk traps
(
∼
1
μ
s
)
is almost independent of bias, differing from that of interface traps (about 200 to
1
μ
s
). |
| doi_str_mv | 10.1063/1.3374689 |
| format | Article |
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LiNbO
3
/
AlGaN
/
GaN
heterostructure capacitors were characterized by temperature dependent capacitance and conductance measurements. In a wide temperature range (200-450 K), two kind of traps were identified by the conductance measurements. One is the interface trap with the density of
1.1
×
10
12
to
1.4
×
10
10
cm
−
2
eV
−
1
which shows an exponential dependency of time constant on the bias applied to the heterostructure. The other is the bulk trap with a lower density, about
(
1
−
4
)
×
10
10
cm
−
2
eV
−
1
, which manifests at higher temperatures. The measured time constant of bulk traps
(
∼
1
μ
s
)
is almost independent of bias, differing from that of interface traps (about 200 to
1
μ
s
).</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.3374689</identifier><identifier>CODEN: JAPIAU</identifier><publisher>American Institute of Physics</publisher><ispartof>Journal of applied physics, 2010-04, Vol.107 (8), p.084508-084508-4</ispartof><rights>2010 American Institute of Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-scitation_primary_10_1063_1_3374689Trapping_properties3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/jap/article-lookup/doi/10.1063/1.3374689$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,780,784,794,1559,4512,27924,27925,76384,76390</link.rule.ids></links><search><creatorcontrib>Zeng, Huizhong</creatorcontrib><creatorcontrib>Hao, Lanzhong</creatorcontrib><creatorcontrib>Luo, Wenbo</creatorcontrib><creatorcontrib>Liao, Xiuwei</creatorcontrib><creatorcontrib>Huang, Wen</creatorcontrib><creatorcontrib>Lin, Yuan</creatorcontrib><creatorcontrib>Li, Yanrong</creatorcontrib><title>Trapping properties of LiNbO 3 / AlGaN / GaN metal-ferroelectric-semiconductor heterostructure characterized by temperaturedependent conductance measurements</title><title>Journal of applied physics</title><description>The trapping properties of the ferroelectric
LiNbO
3
/
AlGaN
/
GaN
heterostructure capacitors were characterized by temperature dependent capacitance and conductance measurements. In a wide temperature range (200-450 K), two kind of traps were identified by the conductance measurements. One is the interface trap with the density of
1.1
×
10
12
to
1.4
×
10
10
cm
−
2
eV
−
1
which shows an exponential dependency of time constant on the bias applied to the heterostructure. The other is the bulk trap with a lower density, about
(
1
−
4
)
×
10
10
cm
−
2
eV
−
1
, which manifests at higher temperatures. The measured time constant of bulk traps
(
∼
1
μ
s
)
is almost independent of bias, differing from that of interface traps (about 200 to
1
μ
s
).</description><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><sourceid/><recordid>eNqlUEtOwzAUtBBIhM-CG_gCaW1Mm2TBAiE-C1Q23Vuvzgs1ij96dhflLtwVRwriAGze6M1oNJph7EaKhRRrtZQLpZq7ddudsEqKtqub1UqcskqIW1m3XdOds4uUPoWQslVdxb63BDFa_8EjhYiULSYeBv5mN7t3rviSP4wvsCk4XYcZxnpAooAjmkzW1AmdNcH3B5MD8T1mpJAylfdAyM0eCEzh7Bf2fHfkGV2JgUnsMaLv0Wc--8EbLBmQiugKn67Y2QBjwusZL9n989P28bVOxmbINngdyTqgo5ZCTwNoqecBfovpv2Lqv_4fUTx1BA</recordid><startdate>20100427</startdate><enddate>20100427</enddate><creator>Zeng, Huizhong</creator><creator>Hao, Lanzhong</creator><creator>Luo, Wenbo</creator><creator>Liao, Xiuwei</creator><creator>Huang, Wen</creator><creator>Lin, Yuan</creator><creator>Li, Yanrong</creator><general>American Institute of Physics</general><scope/></search><sort><creationdate>20100427</creationdate><title>Trapping properties of LiNbO 3 / AlGaN / GaN metal-ferroelectric-semiconductor heterostructure characterized by temperaturedependent conductance measurements</title><author>Zeng, Huizhong ; Hao, Lanzhong ; Luo, Wenbo ; Liao, Xiuwei ; Huang, Wen ; Lin, Yuan ; Li, Yanrong</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-scitation_primary_10_1063_1_3374689Trapping_properties3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><creationdate>2010</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zeng, Huizhong</creatorcontrib><creatorcontrib>Hao, Lanzhong</creatorcontrib><creatorcontrib>Luo, Wenbo</creatorcontrib><creatorcontrib>Liao, Xiuwei</creatorcontrib><creatorcontrib>Huang, Wen</creatorcontrib><creatorcontrib>Lin, Yuan</creatorcontrib><creatorcontrib>Li, Yanrong</creatorcontrib><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zeng, Huizhong</au><au>Hao, Lanzhong</au><au>Luo, Wenbo</au><au>Liao, Xiuwei</au><au>Huang, Wen</au><au>Lin, Yuan</au><au>Li, Yanrong</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Trapping properties of LiNbO 3 / AlGaN / GaN metal-ferroelectric-semiconductor heterostructure characterized by temperaturedependent conductance measurements</atitle><jtitle>Journal of applied physics</jtitle><date>2010-04-27</date><risdate>2010</risdate><volume>107</volume><issue>8</issue><spage>084508</spage><epage>084508-4</epage><pages>084508-084508-4</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>The trapping properties of the ferroelectric
LiNbO
3
/
AlGaN
/
GaN
heterostructure capacitors were characterized by temperature dependent capacitance and conductance measurements. In a wide temperature range (200-450 K), two kind of traps were identified by the conductance measurements. One is the interface trap with the density of
1.1
×
10
12
to
1.4
×
10
10
cm
−
2
eV
−
1
which shows an exponential dependency of time constant on the bias applied to the heterostructure. The other is the bulk trap with a lower density, about
(
1
−
4
)
×
10
10
cm
−
2
eV
−
1
, which manifests at higher temperatures. The measured time constant of bulk traps
(
∼
1
μ
s
)
is almost independent of bias, differing from that of interface traps (about 200 to
1
μ
s
).</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.3374689</doi></addata></record> |
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| identifier | ISSN: 0021-8979 |
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| source | 美国小型学会期刊集（AIP Scitation平台）; AIP_美国物理联合会期刊回溯（NSTL购买）; Alma/SFX Local Collection |
| title | Trapping properties of LiNbO 3 / AlGaN / GaN metal-ferroelectric-semiconductor heterostructure characterized by temperaturedependent conductance measurements |
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