Temperature dependence of magnetoresistance oscillations dueto Coulomb staircases in a nanometer vertical ferromagnetic tunnel junction
Magnetic random access memory is considered to be a promising candidate for a future nonvolatile memory. The size of the magnetic tunnel junction (MTJ) cell has been gradually decreasing and has reached the sub-100 nm level. As the size of the MTJ cell approaches the 10 nm level, we must consider th...
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| Veröffentlicht in: | Journal of applied physics 2010-05, Vol.107 (9), p.09C710-09C710-3 |
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