Property modifications of nanoporous p SiCOH dielectrics to enhance resistance to plasma-induced damage
The resistance to plasma-induced damage of various nanoporous, ultra low- κ porous SiCOH films used as interconnect dielectric materials in integrated circuits was studied. These films are susceptible to damage by plasma processes used during nanofabrication. The dielectric constants and chemical co...
Gespeichert in:
| Veröffentlicht in: | Journal of applied physics 2008-11, Vol.104 (9), p.094109-094109-7 |
|---|---|
| Hauptverfasser: | , , , , , , , , , |
| Format: | Artikel |
| Sprache: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 094109-7 |
|---|---|
| container_issue | 9 |
| container_start_page | 094109 |
| container_title | Journal of applied physics |
| container_volume | 104 |
| creator | Ryan, E. Todd Gates, Stephen M. Grill, Alfred Molis, Steven Flaitz, Philip Arnold, John Sankarapandian, Muthumanickam Cohen, Stephan A. Ostrovski, Yuri Dimitrakopoulos, Christos |
| description | The resistance to plasma-induced damage of various nanoporous, ultra low-
κ
porous SiCOH films used as interconnect dielectric materials in integrated circuits was studied. These films are susceptible to damage by plasma processes used during nanofabrication. The dielectric constants and chemical compositions of four dielectric films were correlated with measured amounts of plasma damage. Films deposited with higher carbon content in the form of
Si
-
CH
3
and
Si
(
CH
3
)
2
bonding exhibited less plasma damage than similar films with lower carbon content. |
| doi_str_mv | 10.1063/1.3006438 |
| format | Article |
| fullrecord | <record><control><sourceid>scitation</sourceid><recordid>TN_cdi_scitation_primary_10_1063_1_3006438Property_modificatio</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>jap</sourcerecordid><originalsourceid>FETCH-scitation_primary_10_1063_1_3006438Property_modificatio3</originalsourceid><addsrcrecordid>eNqlj7FOAzEQRC1EJA5CwR_sD1xYY5LcNTQRKB2RoLcsey8surMtr1Pk74EoSPRUM5pi5o1SdxoXGlfmXi8M4urRdBeq0dj17Xq5xEvVID7otuvX_ZW6FvlE1LozfaP2u5IylXqEKQUe2LvKKQqkAaKLKaeSDgIZ3njzuoXANJKvhb1ATUDxw0VPUEhY6sl-p3l0MrmWYzh4ChDc5PY0V7PBjUK3Z71RTy_P75ttK57radPmwpMrR6vR_lyx2p6v_CLaP4jm3wVfWnRg4g</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Property modifications of nanoporous p SiCOH dielectrics to enhance resistance to plasma-induced damage</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><source>Alma/SFX Local Collection</source><creator>Ryan, E. Todd ; Gates, Stephen M. ; Grill, Alfred ; Molis, Steven ; Flaitz, Philip ; Arnold, John ; Sankarapandian, Muthumanickam ; Cohen, Stephan A. ; Ostrovski, Yuri ; Dimitrakopoulos, Christos</creator><creatorcontrib>Ryan, E. Todd ; Gates, Stephen M. ; Grill, Alfred ; Molis, Steven ; Flaitz, Philip ; Arnold, John ; Sankarapandian, Muthumanickam ; Cohen, Stephan A. ; Ostrovski, Yuri ; Dimitrakopoulos, Christos</creatorcontrib><description>The resistance to plasma-induced damage of various nanoporous, ultra low-
κ
porous SiCOH films used as interconnect dielectric materials in integrated circuits was studied. These films are susceptible to damage by plasma processes used during nanofabrication. The dielectric constants and chemical compositions of four dielectric films were correlated with measured amounts of plasma damage. Films deposited with higher carbon content in the form of
Si
-
CH
3
and
Si
(
CH
3
)
2
bonding exhibited less plasma damage than similar films with lower carbon content.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.3006438</identifier><identifier>CODEN: JAPIAU</identifier><publisher>American Institute of Physics</publisher><ispartof>Journal of applied physics, 2008-11, Vol.104 (9), p.094109-094109-7</ispartof><rights>2008 American Institute of Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-scitation_primary_10_1063_1_3006438Property_modificatio3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/jap/article-lookup/doi/10.1063/1.3006438$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,776,780,790,1553,4498,27903,27904,76130,76136</link.rule.ids></links><search><creatorcontrib>Ryan, E. Todd</creatorcontrib><creatorcontrib>Gates, Stephen M.</creatorcontrib><creatorcontrib>Grill, Alfred</creatorcontrib><creatorcontrib>Molis, Steven</creatorcontrib><creatorcontrib>Flaitz, Philip</creatorcontrib><creatorcontrib>Arnold, John</creatorcontrib><creatorcontrib>Sankarapandian, Muthumanickam</creatorcontrib><creatorcontrib>Cohen, Stephan A.</creatorcontrib><creatorcontrib>Ostrovski, Yuri</creatorcontrib><creatorcontrib>Dimitrakopoulos, Christos</creatorcontrib><title>Property modifications of nanoporous p SiCOH dielectrics to enhance resistance to plasma-induced damage</title><title>Journal of applied physics</title><description>The resistance to plasma-induced damage of various nanoporous, ultra low-
κ
porous SiCOH films used as interconnect dielectric materials in integrated circuits was studied. These films are susceptible to damage by plasma processes used during nanofabrication. The dielectric constants and chemical compositions of four dielectric films were correlated with measured amounts of plasma damage. Films deposited with higher carbon content in the form of
Si
-
CH
3
and
Si
(
CH
3
)
2
bonding exhibited less plasma damage than similar films with lower carbon content.</description><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><sourceid/><recordid>eNqlj7FOAzEQRC1EJA5CwR_sD1xYY5LcNTQRKB2RoLcsey8surMtr1Pk74EoSPRUM5pi5o1SdxoXGlfmXi8M4urRdBeq0dj17Xq5xEvVID7otuvX_ZW6FvlE1LozfaP2u5IylXqEKQUe2LvKKQqkAaKLKaeSDgIZ3njzuoXANJKvhb1ATUDxw0VPUEhY6sl-p3l0MrmWYzh4ChDc5PY0V7PBjUK3Z71RTy_P75ttK57radPmwpMrR6vR_lyx2p6v_CLaP4jm3wVfWnRg4g</recordid><startdate>20081113</startdate><enddate>20081113</enddate><creator>Ryan, E. Todd</creator><creator>Gates, Stephen M.</creator><creator>Grill, Alfred</creator><creator>Molis, Steven</creator><creator>Flaitz, Philip</creator><creator>Arnold, John</creator><creator>Sankarapandian, Muthumanickam</creator><creator>Cohen, Stephan A.</creator><creator>Ostrovski, Yuri</creator><creator>Dimitrakopoulos, Christos</creator><general>American Institute of Physics</general><scope/></search><sort><creationdate>20081113</creationdate><title>Property modifications of nanoporous p SiCOH dielectrics to enhance resistance to plasma-induced damage</title><author>Ryan, E. Todd ; Gates, Stephen M. ; Grill, Alfred ; Molis, Steven ; Flaitz, Philip ; Arnold, John ; Sankarapandian, Muthumanickam ; Cohen, Stephan A. ; Ostrovski, Yuri ; Dimitrakopoulos, Christos</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-scitation_primary_10_1063_1_3006438Property_modificatio3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><creationdate>2008</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ryan, E. Todd</creatorcontrib><creatorcontrib>Gates, Stephen M.</creatorcontrib><creatorcontrib>Grill, Alfred</creatorcontrib><creatorcontrib>Molis, Steven</creatorcontrib><creatorcontrib>Flaitz, Philip</creatorcontrib><creatorcontrib>Arnold, John</creatorcontrib><creatorcontrib>Sankarapandian, Muthumanickam</creatorcontrib><creatorcontrib>Cohen, Stephan A.</creatorcontrib><creatorcontrib>Ostrovski, Yuri</creatorcontrib><creatorcontrib>Dimitrakopoulos, Christos</creatorcontrib><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ryan, E. Todd</au><au>Gates, Stephen M.</au><au>Grill, Alfred</au><au>Molis, Steven</au><au>Flaitz, Philip</au><au>Arnold, John</au><au>Sankarapandian, Muthumanickam</au><au>Cohen, Stephan A.</au><au>Ostrovski, Yuri</au><au>Dimitrakopoulos, Christos</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Property modifications of nanoporous p SiCOH dielectrics to enhance resistance to plasma-induced damage</atitle><jtitle>Journal of applied physics</jtitle><date>2008-11-13</date><risdate>2008</risdate><volume>104</volume><issue>9</issue><spage>094109</spage><epage>094109-7</epage><pages>094109-094109-7</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>The resistance to plasma-induced damage of various nanoporous, ultra low-
κ
porous SiCOH films used as interconnect dielectric materials in integrated circuits was studied. These films are susceptible to damage by plasma processes used during nanofabrication. The dielectric constants and chemical compositions of four dielectric films were correlated with measured amounts of plasma damage. Films deposited with higher carbon content in the form of
Si
-
CH
3
and
Si
(
CH
3
)
2
bonding exhibited less plasma damage than similar films with lower carbon content.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.3006438</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0021-8979 |
| ispartof | Journal of applied physics, 2008-11, Vol.104 (9), p.094109-094109-7 |
| issn | 0021-8979 1089-7550 |
| language | |
| recordid | cdi_scitation_primary_10_1063_1_3006438Property_modificatio |
| source | AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection |
| title | Property modifications of nanoporous p SiCOH dielectrics to enhance resistance to plasma-induced damage |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-27T14%3A24%3A50IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-scitation&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Property%20modifications%20of%20nanoporous%20p%20SiCOH%20dielectrics%20to%20enhance%20resistance%20to%20plasma-induced%20damage&rft.jtitle=Journal%20of%20applied%20physics&rft.au=Ryan,%20E.%20Todd&rft.date=2008-11-13&rft.volume=104&rft.issue=9&rft.spage=094109&rft.epage=094109-7&rft.pages=094109-094109-7&rft.issn=0021-8979&rft.eissn=1089-7550&rft.coden=JAPIAU&rft_id=info:doi/10.1063/1.3006438&rft_dat=%3Cscitation%3Ejap%3C/scitation%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |