Electronically patterning through one-dimensional nanostripes with high density of states on single-crystalline Al 2 O 3 domain
Self-assembled one-dimensional nanostripes on the single-crystalline Al 2 O 3 domains are found to be the nucleation sites of nanoparticles through an enhanced density of states observed by the scanning tunneling microscopy and spectroscopy. Bias-dependent topographic images and the conductivity spe...
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| Veröffentlicht in: | Applied physics letters 2008-10, Vol.93 (14), p.143104-143104-3 |
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| container_end_page | 143104-3 |
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| container_issue | 14 |
| container_start_page | 143104 |
| container_title | Applied physics letters |
| container_volume | 93 |
| creator | Hsu, Pin-Jui Wu, Chii-Bin Yen, Hong-Yu Wong, Sheng-Syun Lin, Wen-Chin Lin, Minn-Tsong |
| description | Self-assembled one-dimensional nanostripes on the single-crystalline
Al
2
O
3
domains are found to be the nucleation sites of nanoparticles through an enhanced density of states observed by the scanning tunneling microscopy and spectroscopy. Bias-dependent topographic images and the conductivity spectra indicate that these nanostripes have both enhanced occupied and unoccupied states within the oxide bandgap. These more metallic nanostripes have stronger electronically trapping ability than the oxide domain, which can be used as a one-dimensional electronically self-patterned template for the guided growth of nanostructures. |
| doi_str_mv | 10.1063/1.2996578 |
| format | Article |
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Al
2
O
3
domains are found to be the nucleation sites of nanoparticles through an enhanced density of states observed by the scanning tunneling microscopy and spectroscopy. Bias-dependent topographic images and the conductivity spectra indicate that these nanostripes have both enhanced occupied and unoccupied states within the oxide bandgap. These more metallic nanostripes have stronger electronically trapping ability than the oxide domain, which can be used as a one-dimensional electronically self-patterned template for the guided growth of nanostructures.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.2996578</identifier><identifier>CODEN: APPLAB</identifier><publisher>American Institute of Physics</publisher><ispartof>Applied physics letters, 2008-10, Vol.93 (14), p.143104-143104-3</ispartof><rights>2008 American Institute of Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-scitation_primary_10_1063_1_2996578Electronically_patte3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.2996578$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,776,780,790,1553,4498,27901,27902,76126,76132</link.rule.ids></links><search><creatorcontrib>Hsu, Pin-Jui</creatorcontrib><creatorcontrib>Wu, Chii-Bin</creatorcontrib><creatorcontrib>Yen, Hong-Yu</creatorcontrib><creatorcontrib>Wong, Sheng-Syun</creatorcontrib><creatorcontrib>Lin, Wen-Chin</creatorcontrib><creatorcontrib>Lin, Minn-Tsong</creatorcontrib><title>Electronically patterning through one-dimensional nanostripes with high density of states on single-crystalline Al 2 O 3 domain</title><title>Applied physics letters</title><description>Self-assembled one-dimensional nanostripes on the single-crystalline
Al
2
O
3
domains are found to be the nucleation sites of nanoparticles through an enhanced density of states observed by the scanning tunneling microscopy and spectroscopy. Bias-dependent topographic images and the conductivity spectra indicate that these nanostripes have both enhanced occupied and unoccupied states within the oxide bandgap. These more metallic nanostripes have stronger electronically trapping ability than the oxide domain, which can be used as a one-dimensional electronically self-patterned template for the guided growth of nanostructures.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><sourceid/><recordid>eNqlj09LxDAQxYMoWP8c_AbzBbImDW23F0FkxZuXvYfQZrcj6aRkItKTX92s7MWzp2HmPX7znhAPWm20as2j3tR93zbd9kJUWnWdNFpvL0WllDKy7Rt9LW6YP8ra1MZU4nsX_JBTJBxcCCssLmefCOkIeUrx8zhBJC9HnD0xRnIByFHknHDxDF-YJ5iwuMaTnleIB-DsctEiARdO8HJIa7mFgOThOUAN72BgjLNDuhNXBxfY35_nrXh63e1f3iQPWDDlo10Szi6tVit7qmi1PVf8G93-Rjf_BvwAxYppwg</recordid><startdate>20081007</startdate><enddate>20081007</enddate><creator>Hsu, Pin-Jui</creator><creator>Wu, Chii-Bin</creator><creator>Yen, Hong-Yu</creator><creator>Wong, Sheng-Syun</creator><creator>Lin, Wen-Chin</creator><creator>Lin, Minn-Tsong</creator><general>American Institute of Physics</general><scope/></search><sort><creationdate>20081007</creationdate><title>Electronically patterning through one-dimensional nanostripes with high density of states on single-crystalline Al 2 O 3 domain</title><author>Hsu, Pin-Jui ; Wu, Chii-Bin ; Yen, Hong-Yu ; Wong, Sheng-Syun ; Lin, Wen-Chin ; Lin, Minn-Tsong</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-scitation_primary_10_1063_1_2996578Electronically_patte3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><creationdate>2008</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Hsu, Pin-Jui</creatorcontrib><creatorcontrib>Wu, Chii-Bin</creatorcontrib><creatorcontrib>Yen, Hong-Yu</creatorcontrib><creatorcontrib>Wong, Sheng-Syun</creatorcontrib><creatorcontrib>Lin, Wen-Chin</creatorcontrib><creatorcontrib>Lin, Minn-Tsong</creatorcontrib><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Hsu, Pin-Jui</au><au>Wu, Chii-Bin</au><au>Yen, Hong-Yu</au><au>Wong, Sheng-Syun</au><au>Lin, Wen-Chin</au><au>Lin, Minn-Tsong</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Electronically patterning through one-dimensional nanostripes with high density of states on single-crystalline Al 2 O 3 domain</atitle><jtitle>Applied physics letters</jtitle><date>2008-10-07</date><risdate>2008</risdate><volume>93</volume><issue>14</issue><spage>143104</spage><epage>143104-3</epage><pages>143104-143104-3</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>Self-assembled one-dimensional nanostripes on the single-crystalline
Al
2
O
3
domains are found to be the nucleation sites of nanoparticles through an enhanced density of states observed by the scanning tunneling microscopy and spectroscopy. Bias-dependent topographic images and the conductivity spectra indicate that these nanostripes have both enhanced occupied and unoccupied states within the oxide bandgap. These more metallic nanostripes have stronger electronically trapping ability than the oxide domain, which can be used as a one-dimensional electronically self-patterned template for the guided growth of nanostructures.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.2996578</doi></addata></record> |
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| ispartof | Applied physics letters, 2008-10, Vol.93 (14), p.143104-143104-3 |
| issn | 0003-6951 1077-3118 |
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| recordid | cdi_scitation_primary_10_1063_1_2996578Electronically_patte |
| source | AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection |
| title | Electronically patterning through one-dimensional nanostripes with high density of states on single-crystalline Al 2 O 3 domain |
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