Dominant ultraviolet light emissions in packed ZnO columnarhomojunction diodes

Dominant ultraviolet light emissions in packed ZnO columnarhomojunction diodes

The growth of Sb-doped p -type Zn O ∕ Ga -doped n -type ZnO homojunction on Si (100) substrate by molecular beam epitaxy led to closely packed vertical ZnO columns with lateral diameters ranging from 100 to 400 nm . Mesa structures were defined and Ohmic contact of both n -type ZnO and p -type ZnO w...

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Veröffentlicht in:Applied physics letters 2008-10, Vol.93 (13), p.132113-132113-3
Hauptverfasser: Kong, Jieying, Chu, Sheng, Olmedo, Mario, Li, Lin, Yang, Zheng, Liu, Jianlin
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container_issue 13
container_start_page 132113
container_title Applied physics letters
container_volume 93
creator Kong, Jieying
Chu, Sheng
Olmedo, Mario
Li, Lin
Yang, Zheng
Liu, Jianlin
description The growth of Sb-doped p -type Zn O ∕ Ga -doped n -type ZnO homojunction on Si (100) substrate by molecular beam epitaxy led to closely packed vertical ZnO columns with lateral diameters ranging from 100 to 400 nm . Mesa structures were defined and Ohmic contact of both n -type ZnO and p -type ZnO was realized with Au ∕ Ti and Au ∕ Ni O , respectively. I - V and C - V curves present typical electrical properties of a diode, indicating that reliable p -type ZnO was formed. Electroluminescence shows dominant ultraviolet emissions with insignificant deep-level related yellow/green band emissions at different drive currents from 60 to 100 mA at room temperature.
doi_str_mv 10.1063/1.2992629
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title Dominant ultraviolet light emissions in packed ZnO columnarhomojunction diodes
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