Directional emission control and increased light extraction in GaNphotonic crystal light emitting diodes
Limitations in extraction efficiency of gallium nitride (GaN) photonic crystal (PhC) light emitting diodes (LEDs) are addressed by implementing an LED design using both two-dimensional PhCs in-plane and index guiding layers (IGLs) in the vertical direction. The effects of PhCs on light extraction an...
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| Veröffentlicht in: | Applied physics letters 2008-09, Vol.93 (10), p.103502-103502-3 |
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| container_end_page | 103502-3 |
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| container_title | Applied physics letters |
| container_volume | 93 |
| creator | McGroddy, K. David, A. Matioli, E. Iza, M. Nakamura, S. DenBaars, S. Speck, J. S. Weisbuch, C. Hu, E. L. |
| description | Limitations in extraction efficiency of gallium nitride (GaN) photonic crystal (PhC) light emitting diodes (LEDs) are addressed by implementing an LED design using both two-dimensional PhCs in-plane and index guiding layers (IGLs) in the vertical direction. The effects of PhCs on light extraction and emission directionality from GaN LEDs are studied experimentally. Angular-resolved electroluminescence clearly shows the combined effect of controlling the vertical mode profile with the IGLs and tailoring the emission profile with the periodicity of the PhC lattice. Increases in directional emission as high as 3.5 times are achieved by taking advantage of this directionality and guided mode control. |
| doi_str_mv | 10.1063/1.2978068 |
| format | Article |
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S.</creatorcontrib><creatorcontrib>Weisbuch, C.</creatorcontrib><creatorcontrib>Hu, E. L.</creatorcontrib><title>Directional emission control and increased light extraction in GaNphotonic crystal light emitting diodes</title><title>Applied physics letters</title><description>Limitations in extraction efficiency of gallium nitride (GaN) photonic crystal (PhC) light emitting diodes (LEDs) are addressed by implementing an LED design using both two-dimensional PhCs in-plane and index guiding layers (IGLs) in the vertical direction. The effects of PhCs on light extraction and emission directionality from GaN LEDs are studied experimentally. Angular-resolved electroluminescence clearly shows the combined effect of controlling the vertical mode profile with the IGLs and tailoring the emission profile with the periodicity of the PhC lattice. 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L.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Directional emission control and increased light extraction in GaNphotonic crystal light emitting diodes</atitle><jtitle>Applied physics letters</jtitle><date>2008-09-08</date><risdate>2008</risdate><volume>93</volume><issue>10</issue><spage>103502</spage><epage>103502-3</epage><pages>103502-103502-3</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>Limitations in extraction efficiency of gallium nitride (GaN) photonic crystal (PhC) light emitting diodes (LEDs) are addressed by implementing an LED design using both two-dimensional PhCs in-plane and index guiding layers (IGLs) in the vertical direction. The effects of PhCs on light extraction and emission directionality from GaN LEDs are studied experimentally. Angular-resolved electroluminescence clearly shows the combined effect of controlling the vertical mode profile with the IGLs and tailoring the emission profile with the periodicity of the PhC lattice. Increases in directional emission as high as 3.5 times are achieved by taking advantage of this directionality and guided mode control.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.2978068</doi></addata></record> |
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| title | Directional emission control and increased light extraction in GaNphotonic crystal light emitting diodes |
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