Organometallic vapor phase epitaxial growth of GaN on Zr N ∕ Al N ∕ Si substrates

An intermediate Zr N ∕ Al N layer stack that enables the epitaxial growth of GaN on (111) silicon substrates using conventional organometallic vapor phase epitaxy at substrate temperatures of ∼ 1000 ° C is reported. The epitaxial (111) ZrN layer provides an integral back reflector and Ohmic contact to n -type GaN, whereas the (0001) AlN layer serves as a reaction barrier, as a thermally conductive interface layer, and as an electrical isolation layer. Smooth (0001) GaN films less than 1 μ m thick grown on Zr N ∕ Al N ∕ Si yield 0002 x-ray rocking curve full width at half maximum values as low as 1230 arc sec .