Experimental evidence for the flatband voltage shift of high- k metal-oxide-semiconductor devices due to the dipole formation at the high- k ∕ Si O 2 interface

We have examined an origin of the flatband voltage ( V FB ) shift in metal-oxide-semiconductor capacitors by employing bilayer high- k gate dielectrics consisting of Hf O 2 and Al 2 O 3 on the interfacial Si O 2 layer. We found that the high- k ∕ Si O 2 interface affects the V FB shift through an el...

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Veröffentlicht in:	Applied physics letters 2008-04, Vol.92 (13), p.132907-132907-3
Hauptverfasser:	Iwamoto, Kunihiko, Kamimuta, Yuuichi, Ogawa, Arito, Watanabe, Yukimune, Migita, Shinji, Mizubayashi, Wataru, Morita, Yukinori, Takahashi, Masashi, Ota, Hiroyuki, Nabatame, Toshihide, Toriumi, Akira
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