Electronic properties of adsorbates on Ga As ( 001 ) - c ( 2 × 8 ) ∕ ( 2 × 4 )
A systematic experimental and theoretical study was performed to determine the causes of oxide-induced Fermi level pinning and unpinning on Ga As ( 001 ) - c ( 2 × 8 ) ∕ ( 2 × 4 ) . Scanning tunneling spectroscopy (STS) and density functional theory (DFT) were used to study four different adsorbates...
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| Veröffentlicht in: | The Journal of chemical physics 2007-10, Vol.127 (13), p.134705-134705-9 |
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| container_end_page | 134705-9 |
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| container_issue | 13 |
| container_start_page | 134705 |
| container_title | The Journal of chemical physics |
| container_volume | 127 |
| creator | Winn, Darby L. Hale, Michael J. Grassman, Tyler J. Sexton, Jonathan Z. Kummel, Andrew C. Passlack, Matthias Droopad, Ravi |
| description | A systematic experimental and theoretical study was performed to determine the causes of oxide-induced Fermi level pinning and unpinning on
Ga
As
(
001
)
-
c
(
2
×
8
)
∕
(
2
×
4
)
. Scanning tunneling spectroscopy (STS) and density functional theory (DFT) were used to study four different adsorbates' (
O
2
,
In
2
O
,
Ga
2
O
, and SiO) bonding to the
Ga
As
(
001
)
-
c
(
2
×
8
)
∕
(
2
×
4
)
surface. The STS results revealed that out of the four adsorbates studied, only one left the Fermi level unpinned,
Ga
2
O
. DFT calculations were used to elucidate the causes of the Fermi level pinning. Two distinct pinning mechanisms were identified: direct (adsorbate induced states in the band gap region) and indirect pinnings (generation of undimerized As atoms). For
O
2
dissociative chemisorption onto
Ga
As
(
001
)
-
c
(
2
×
8
)
∕
(
2
×
4
)
, the Fermi level pinning was only indirect, while direct Fermi level pinning was observed when
In
2
O
was deposited on
Ga
As
(
001
)
-
c
(
2
×
8
)
∕
(
2
×
4
)
. In the case of SiO on
Ga
As
(
001
)
-
c
(
2
×
8
)
∕
(
2
×
4
)
, the Fermi level pinning was a combination of the two mechanisms. |
| doi_str_mv | 10.1063/1.2786097 |
| format | Article |
| fullrecord | <record><control><sourceid>scitation</sourceid><recordid>TN_cdi_scitation_primary_10_1063_1_2786097Electronic_propertie</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>scitation_primary_10_1063_1_2786097Electronic_propertie</sourcerecordid><originalsourceid>FETCH-scitation_primary_10_1063_1_2786097Electronic_propertie3</originalsourceid><addsrcrecordid>eNqljksKwjAURYMoWD8Dd_CGOmh9qZI2E0HEz1ich1hbiNSmJJm4AzcgLsiduBJbqLoAR_eewb0cQkYUA4psNqVBGMUMedQiHsWY-xHj2CYeYkh9zpB1Sc_aMyLSKJx7ZL_O08QZXagESqPL1DiVWtAZyJPV5ihdTQVsJSwtjKHawQR8SKoewvMBcYWv2_2Dc5gMSCeTuU2HTfbJYrM-rHa-TZSTTulClEZdpLkKiqK2FlQ01j8b8bWZ_X3wBr_-VAA</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Electronic properties of adsorbates on Ga As ( 001 ) - c ( 2 × 8 ) ∕ ( 2 × 4 )</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><creator>Winn, Darby L. ; Hale, Michael J. ; Grassman, Tyler J. ; Sexton, Jonathan Z. ; Kummel, Andrew C. ; Passlack, Matthias ; Droopad, Ravi</creator><creatorcontrib>Winn, Darby L. ; Hale, Michael J. ; Grassman, Tyler J. ; Sexton, Jonathan Z. ; Kummel, Andrew C. ; Passlack, Matthias ; Droopad, Ravi</creatorcontrib><description>A systematic experimental and theoretical study was performed to determine the causes of oxide-induced Fermi level pinning and unpinning on
Ga
As
(
001
)
-
c
(
2
×
8
)
∕
(
2
×
4
)
. Scanning tunneling spectroscopy (STS) and density functional theory (DFT) were used to study four different adsorbates' (
O
2
,
In
2
O
,
Ga
2
O
, and SiO) bonding to the
Ga
As
(
001
)
-
c
(
2
×
8
)
∕
(
2
×
4
)
surface. The STS results revealed that out of the four adsorbates studied, only one left the Fermi level unpinned,
Ga
2
O
. DFT calculations were used to elucidate the causes of the Fermi level pinning. Two distinct pinning mechanisms were identified: direct (adsorbate induced states in the band gap region) and indirect pinnings (generation of undimerized As atoms). For
O
2
dissociative chemisorption onto
Ga
As
(
001
)
-
c
(
2
×
8
)
∕
(
2
×
4
)
, the Fermi level pinning was only indirect, while direct Fermi level pinning was observed when
In
2
O
was deposited on
Ga
As
(
001
)
-
c
(
2
×
8
)
∕
(
2
×
4
)
. In the case of SiO on
Ga
As
(
001
)
-
c
(
2
×
8
)
∕
(
2
×
4
)
, the Fermi level pinning was a combination of the two mechanisms.</description><identifier>ISSN: 0021-9606</identifier><identifier>EISSN: 1089-7690</identifier><identifier>DOI: 10.1063/1.2786097</identifier><identifier>CODEN: JCPSA6</identifier><publisher>American Institute of Physics</publisher><ispartof>The Journal of chemical physics, 2007-10, Vol.127 (13), p.134705-134705-9</ispartof><rights>2007 American Institute of Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-scitation_primary_10_1063_1_2786097Electronic_propertie3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>315,782,786,796,1561,4514,27931,27932</link.rule.ids></links><search><creatorcontrib>Winn, Darby L.</creatorcontrib><creatorcontrib>Hale, Michael J.</creatorcontrib><creatorcontrib>Grassman, Tyler J.</creatorcontrib><creatorcontrib>Sexton, Jonathan Z.</creatorcontrib><creatorcontrib>Kummel, Andrew C.</creatorcontrib><creatorcontrib>Passlack, Matthias</creatorcontrib><creatorcontrib>Droopad, Ravi</creatorcontrib><title>Electronic properties of adsorbates on Ga As ( 001 ) - c ( 2 × 8 ) ∕ ( 2 × 4 )</title><title>The Journal of chemical physics</title><description>A systematic experimental and theoretical study was performed to determine the causes of oxide-induced Fermi level pinning and unpinning on
Ga
As
(
001
)
-
c
(
2
×
8
)
∕
(
2
×
4
)
. Scanning tunneling spectroscopy (STS) and density functional theory (DFT) were used to study four different adsorbates' (
O
2
,
In
2
O
,
Ga
2
O
, and SiO) bonding to the
Ga
As
(
001
)
-
c
(
2
×
8
)
∕
(
2
×
4
)
surface. The STS results revealed that out of the four adsorbates studied, only one left the Fermi level unpinned,
Ga
2
O
. DFT calculations were used to elucidate the causes of the Fermi level pinning. Two distinct pinning mechanisms were identified: direct (adsorbate induced states in the band gap region) and indirect pinnings (generation of undimerized As atoms). For
O
2
dissociative chemisorption onto
Ga
As
(
001
)
-
c
(
2
×
8
)
∕
(
2
×
4
)
, the Fermi level pinning was only indirect, while direct Fermi level pinning was observed when
In
2
O
was deposited on
Ga
As
(
001
)
-
c
(
2
×
8
)
∕
(
2
×
4
)
. In the case of SiO on
Ga
As
(
001
)
-
c
(
2
×
8
)
∕
(
2
×
4
)
, the Fermi level pinning was a combination of the two mechanisms.</description><issn>0021-9606</issn><issn>1089-7690</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2007</creationdate><recordtype>article</recordtype><sourceid/><recordid>eNqljksKwjAURYMoWD8Dd_CGOmh9qZI2E0HEz1ich1hbiNSmJJm4AzcgLsiduBJbqLoAR_eewb0cQkYUA4psNqVBGMUMedQiHsWY-xHj2CYeYkh9zpB1Sc_aMyLSKJx7ZL_O08QZXagESqPL1DiVWtAZyJPV5ihdTQVsJSwtjKHawQR8SKoewvMBcYWv2_2Dc5gMSCeTuU2HTfbJYrM-rHa-TZSTTulClEZdpLkKiqK2FlQ01j8b8bWZ_X3wBr_-VAA</recordid><startdate>20071002</startdate><enddate>20071002</enddate><creator>Winn, Darby L.</creator><creator>Hale, Michael J.</creator><creator>Grassman, Tyler J.</creator><creator>Sexton, Jonathan Z.</creator><creator>Kummel, Andrew C.</creator><creator>Passlack, Matthias</creator><creator>Droopad, Ravi</creator><general>American Institute of Physics</general><scope/></search><sort><creationdate>20071002</creationdate><title>Electronic properties of adsorbates on Ga As ( 001 ) - c ( 2 × 8 ) ∕ ( 2 × 4 )</title><author>Winn, Darby L. ; Hale, Michael J. ; Grassman, Tyler J. ; Sexton, Jonathan Z. ; Kummel, Andrew C. ; Passlack, Matthias ; Droopad, Ravi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-scitation_primary_10_1063_1_2786097Electronic_propertie3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><creationdate>2007</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Winn, Darby L.</creatorcontrib><creatorcontrib>Hale, Michael J.</creatorcontrib><creatorcontrib>Grassman, Tyler J.</creatorcontrib><creatorcontrib>Sexton, Jonathan Z.</creatorcontrib><creatorcontrib>Kummel, Andrew C.</creatorcontrib><creatorcontrib>Passlack, Matthias</creatorcontrib><creatorcontrib>Droopad, Ravi</creatorcontrib><jtitle>The Journal of chemical physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Winn, Darby L.</au><au>Hale, Michael J.</au><au>Grassman, Tyler J.</au><au>Sexton, Jonathan Z.</au><au>Kummel, Andrew C.</au><au>Passlack, Matthias</au><au>Droopad, Ravi</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Electronic properties of adsorbates on Ga As ( 001 ) - c ( 2 × 8 ) ∕ ( 2 × 4 )</atitle><jtitle>The Journal of chemical physics</jtitle><date>2007-10-02</date><risdate>2007</risdate><volume>127</volume><issue>13</issue><spage>134705</spage><epage>134705-9</epage><pages>134705-134705-9</pages><issn>0021-9606</issn><eissn>1089-7690</eissn><coden>JCPSA6</coden><abstract>A systematic experimental and theoretical study was performed to determine the causes of oxide-induced Fermi level pinning and unpinning on
Ga
As
(
001
)
-
c
(
2
×
8
)
∕
(
2
×
4
)
. Scanning tunneling spectroscopy (STS) and density functional theory (DFT) were used to study four different adsorbates' (
O
2
,
In
2
O
,
Ga
2
O
, and SiO) bonding to the
Ga
As
(
001
)
-
c
(
2
×
8
)
∕
(
2
×
4
)
surface. The STS results revealed that out of the four adsorbates studied, only one left the Fermi level unpinned,
Ga
2
O
. DFT calculations were used to elucidate the causes of the Fermi level pinning. Two distinct pinning mechanisms were identified: direct (adsorbate induced states in the band gap region) and indirect pinnings (generation of undimerized As atoms). For
O
2
dissociative chemisorption onto
Ga
As
(
001
)
-
c
(
2
×
8
)
∕
(
2
×
4
)
, the Fermi level pinning was only indirect, while direct Fermi level pinning was observed when
In
2
O
was deposited on
Ga
As
(
001
)
-
c
(
2
×
8
)
∕
(
2
×
4
)
. In the case of SiO on
Ga
As
(
001
)
-
c
(
2
×
8
)
∕
(
2
×
4
)
, the Fermi level pinning was a combination of the two mechanisms.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.2786097</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0021-9606 |
| ispartof | The Journal of chemical physics, 2007-10, Vol.127 (13), p.134705-134705-9 |
| issn | 0021-9606 1089-7690 |
| language | |
| recordid | cdi_scitation_primary_10_1063_1_2786097Electronic_propertie |
| source | AIP Journals Complete; AIP Digital Archive |
| title | Electronic properties of adsorbates on Ga As ( 001 ) - c ( 2 × 8 ) ∕ ( 2 × 4 ) |
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