Spectroscopic characterization of the electrical properties of Fe implants on Ga In P ∕ Ga As
We have investigated the structural and electrical properties of Ga In P ∕ Ga As epilayers implanted with Fe atoms to produce a shallow high resistivity layer. Proton-induced x-ray emission channeling measurements indicate that the substitutional fraction of the Fe implanted atoms decreases with inc...
Gespeichert in:
| Veröffentlicht in: | Journal of applied physics 2007-10, Vol.102 (7), p.073711-073711-6 |
|---|---|
| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 073711-6 |
|---|---|
| container_issue | 7 |
| container_start_page | 073711 |
| container_title | Journal of applied physics |
| container_volume | 102 |
| creator | Fraboni, Beatrice Castaldini, A. Cesca, Tiziana Gasparotto, Andrea Tarricone, Luciano |
| description | We have investigated the structural and electrical properties of
Ga
In
P
∕
Ga
As
epilayers implanted with Fe atoms to produce a shallow high resistivity layer. Proton-induced x-ray emission channeling measurements indicate that the substitutional fraction of the Fe implanted atoms decreases with increasing postimplant annealing temperatures. However, current-voltage analyses as a function of temperature indicate that a high temperature postimplantation annealing is necessary for the removal of the implantation-induced damage and for the activation of an efficient and stable electrical compensation process, which we have ascribed to the interplay between a deep donor and a deep acceptor, located at
E
C
−
0.50
eV
and
E
V
+
0.74
eV
, respectively. We have focused our attention on the latter deep level, attributed to the
Fe
2
+
∕
3
+
related acceptor trap, which we have directly identified and characterized by spectral photocurrent analyses and by capacitance transient spectroscopy carried out under below-band-gap illumination, which stimulated the direct emission/trapping of carriers from the deep trap. |
| doi_str_mv | 10.1063/1.2786067 |
| format | Article |
| fullrecord | <record><control><sourceid>scitation</sourceid><recordid>TN_cdi_scitation_primary_10_1063_1_2786067Spectroscopic_charac</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>jap</sourcerecordid><originalsourceid>FETCH-scitation_primary_10_1063_1_2786067Spectroscopic_charac3</originalsourceid><addsrcrecordid>eNqlj0sKAjEQRIMoOH4W3qAvMNrt4Hw2goi_naD7EELEyDgJSTZ6Ai_gBT2Jjrpx7aq6qKa7HmMDwiFhmoxoOM7yFNOswSLCvIizyQSbLEIcU5wXWdFmHe9PiER5UkSM76ySwRkvjdUS5FE4IYNy-iqCNhWYA4SjAlXWW1qKEqwzVrmgla_DpQJ9tqWowstWsBKwqWALj9u9nme-x1oHUXrV_2qXTZeL_Xwde6nD-wW3Tp-Fu3BCXiNw4l-En2r8Uy35-8AT7TtdKQ</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Spectroscopic characterization of the electrical properties of Fe implants on Ga In P ∕ Ga As</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><creator>Fraboni, Beatrice ; Castaldini, A. ; Cesca, Tiziana ; Gasparotto, Andrea ; Tarricone, Luciano</creator><creatorcontrib>Fraboni, Beatrice ; Castaldini, A. ; Cesca, Tiziana ; Gasparotto, Andrea ; Tarricone, Luciano</creatorcontrib><description>We have investigated the structural and electrical properties of
Ga
In
P
∕
Ga
As
epilayers implanted with Fe atoms to produce a shallow high resistivity layer. Proton-induced x-ray emission channeling measurements indicate that the substitutional fraction of the Fe implanted atoms decreases with increasing postimplant annealing temperatures. However, current-voltage analyses as a function of temperature indicate that a high temperature postimplantation annealing is necessary for the removal of the implantation-induced damage and for the activation of an efficient and stable electrical compensation process, which we have ascribed to the interplay between a deep donor and a deep acceptor, located at
E
C
−
0.50
eV
and
E
V
+
0.74
eV
, respectively. We have focused our attention on the latter deep level, attributed to the
Fe
2
+
∕
3
+
related acceptor trap, which we have directly identified and characterized by spectral photocurrent analyses and by capacitance transient spectroscopy carried out under below-band-gap illumination, which stimulated the direct emission/trapping of carriers from the deep trap.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.2786067</identifier><identifier>CODEN: JAPIAU</identifier><publisher>American Institute of Physics</publisher><ispartof>Journal of applied physics, 2007-10, Vol.102 (7), p.073711-073711-6</ispartof><rights>2007 American Institute of Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-scitation_primary_10_1063_1_2786067Spectroscopic_charac3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/jap/article-lookup/doi/10.1063/1.2786067$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,776,780,790,1553,4498,27901,27902,76126,76132</link.rule.ids></links><search><creatorcontrib>Fraboni, Beatrice</creatorcontrib><creatorcontrib>Castaldini, A.</creatorcontrib><creatorcontrib>Cesca, Tiziana</creatorcontrib><creatorcontrib>Gasparotto, Andrea</creatorcontrib><creatorcontrib>Tarricone, Luciano</creatorcontrib><title>Spectroscopic characterization of the electrical properties of Fe implants on Ga In P ∕ Ga As</title><title>Journal of applied physics</title><description>We have investigated the structural and electrical properties of
Ga
In
P
∕
Ga
As
epilayers implanted with Fe atoms to produce a shallow high resistivity layer. Proton-induced x-ray emission channeling measurements indicate that the substitutional fraction of the Fe implanted atoms decreases with increasing postimplant annealing temperatures. However, current-voltage analyses as a function of temperature indicate that a high temperature postimplantation annealing is necessary for the removal of the implantation-induced damage and for the activation of an efficient and stable electrical compensation process, which we have ascribed to the interplay between a deep donor and a deep acceptor, located at
E
C
−
0.50
eV
and
E
V
+
0.74
eV
, respectively. We have focused our attention on the latter deep level, attributed to the
Fe
2
+
∕
3
+
related acceptor trap, which we have directly identified and characterized by spectral photocurrent analyses and by capacitance transient spectroscopy carried out under below-band-gap illumination, which stimulated the direct emission/trapping of carriers from the deep trap.</description><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2007</creationdate><recordtype>article</recordtype><sourceid/><recordid>eNqlj0sKAjEQRIMoOH4W3qAvMNrt4Hw2goi_naD7EELEyDgJSTZ6Ai_gBT2Jjrpx7aq6qKa7HmMDwiFhmoxoOM7yFNOswSLCvIizyQSbLEIcU5wXWdFmHe9PiER5UkSM76ySwRkvjdUS5FE4IYNy-iqCNhWYA4SjAlXWW1qKEqwzVrmgla_DpQJ9tqWowstWsBKwqWALj9u9nme-x1oHUXrV_2qXTZeL_Xwde6nD-wW3Tp-Fu3BCXiNw4l-En2r8Uy35-8AT7TtdKQ</recordid><startdate>20071010</startdate><enddate>20071010</enddate><creator>Fraboni, Beatrice</creator><creator>Castaldini, A.</creator><creator>Cesca, Tiziana</creator><creator>Gasparotto, Andrea</creator><creator>Tarricone, Luciano</creator><general>American Institute of Physics</general><scope/></search><sort><creationdate>20071010</creationdate><title>Spectroscopic characterization of the electrical properties of Fe implants on Ga In P ∕ Ga As</title><author>Fraboni, Beatrice ; Castaldini, A. ; Cesca, Tiziana ; Gasparotto, Andrea ; Tarricone, Luciano</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-scitation_primary_10_1063_1_2786067Spectroscopic_charac3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><creationdate>2007</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Fraboni, Beatrice</creatorcontrib><creatorcontrib>Castaldini, A.</creatorcontrib><creatorcontrib>Cesca, Tiziana</creatorcontrib><creatorcontrib>Gasparotto, Andrea</creatorcontrib><creatorcontrib>Tarricone, Luciano</creatorcontrib><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Fraboni, Beatrice</au><au>Castaldini, A.</au><au>Cesca, Tiziana</au><au>Gasparotto, Andrea</au><au>Tarricone, Luciano</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Spectroscopic characterization of the electrical properties of Fe implants on Ga In P ∕ Ga As</atitle><jtitle>Journal of applied physics</jtitle><date>2007-10-10</date><risdate>2007</risdate><volume>102</volume><issue>7</issue><spage>073711</spage><epage>073711-6</epage><pages>073711-073711-6</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>We have investigated the structural and electrical properties of
Ga
In
P
∕
Ga
As
epilayers implanted with Fe atoms to produce a shallow high resistivity layer. Proton-induced x-ray emission channeling measurements indicate that the substitutional fraction of the Fe implanted atoms decreases with increasing postimplant annealing temperatures. However, current-voltage analyses as a function of temperature indicate that a high temperature postimplantation annealing is necessary for the removal of the implantation-induced damage and for the activation of an efficient and stable electrical compensation process, which we have ascribed to the interplay between a deep donor and a deep acceptor, located at
E
C
−
0.50
eV
and
E
V
+
0.74
eV
, respectively. We have focused our attention on the latter deep level, attributed to the
Fe
2
+
∕
3
+
related acceptor trap, which we have directly identified and characterized by spectral photocurrent analyses and by capacitance transient spectroscopy carried out under below-band-gap illumination, which stimulated the direct emission/trapping of carriers from the deep trap.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.2786067</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0021-8979 |
| ispartof | Journal of applied physics, 2007-10, Vol.102 (7), p.073711-073711-6 |
| issn | 0021-8979 1089-7550 |
| language | |
| recordid | cdi_scitation_primary_10_1063_1_2786067Spectroscopic_charac |
| source | AIP Journals Complete; AIP Digital Archive |
| title | Spectroscopic characterization of the electrical properties of Fe implants on Ga In P ∕ Ga As |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-09T12%3A38%3A16IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-scitation&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Spectroscopic%20characterization%20of%20the%20electrical%20properties%20of%20Fe%20implants%20on%20Ga%20In%20P%20%E2%88%95%20Ga%20As&rft.jtitle=Journal%20of%20applied%20physics&rft.au=Fraboni,%20Beatrice&rft.date=2007-10-10&rft.volume=102&rft.issue=7&rft.spage=073711&rft.epage=073711-6&rft.pages=073711-073711-6&rft.issn=0021-8979&rft.eissn=1089-7550&rft.coden=JAPIAU&rft_id=info:doi/10.1063/1.2786067&rft_dat=%3Cscitation%3Ejap%3C/scitation%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |