Thickness dependence of dielectric properties in bismuthlayer-structured dielectrics
c -axis-oriented epitaxial Sr Bi 4 Ti 4 O 15 and Ca Bi 4 Ti 4 O 15 films having natural superlattice structure were grown on ( 001 ) c Sr Ru O 3 || ( 001 ) Sr Ti O 3 substrates by metal organic chemical vapor deposition. Sr Bi 4 Ti 4 O 15 films suffer no degradation with a dielectric constant of 200...
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| Veröffentlicht in: | Applied physics letters 2006-08, Vol.89 (8), p.082901-082901-3 |
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| container_end_page | 082901-3 |
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| container_issue | 8 |
| container_start_page | 082901 |
| container_title | Applied physics letters |
| container_volume | 89 |
| creator | Takahashi, Kenji Suzuki, Muneyasu Kojima, Takashi Watanabe, Takayuki Sakashita, Yukio Kato, Kazumi Sakata, Osami Sumitani, Kazushi Funakubo, Hiroshi |
| description | c
-axis-oriented epitaxial
Sr
Bi
4
Ti
4
O
15
and
Ca
Bi
4
Ti
4
O
15
films having natural superlattice structure were grown on
(
001
)
c
Sr
Ru
O
3
||
(
001
)
Sr
Ti
O
3
substrates by metal organic chemical vapor deposition.
Sr
Bi
4
Ti
4
O
15
films suffer no degradation with a dielectric constant of 200 down to a film thickness of
15
nm
, which corresponds to four unit cells. Temperature coefficients of capacitance were low enough despite their high dielectric constant. They exhibited stable capacitance and superior insulating properties against applied electric field, irrespective of film thickness. These results open the door to designable size-effect-free materials with high dielectric constant having bias- and temperature-independent characteristics together with superior electrical insulation for high-density capacitor applications. |
| doi_str_mv | 10.1063/1.2336626 |
| format | Article |
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-axis-oriented epitaxial
Sr
Bi
4
Ti
4
O
15
and
Ca
Bi
4
Ti
4
O
15
films having natural superlattice structure were grown on
(
001
)
c
Sr
Ru
O
3
||
(
001
)
Sr
Ti
O
3
substrates by metal organic chemical vapor deposition.
Sr
Bi
4
Ti
4
O
15
films suffer no degradation with a dielectric constant of 200 down to a film thickness of
15
nm
, which corresponds to four unit cells. Temperature coefficients of capacitance were low enough despite their high dielectric constant. They exhibited stable capacitance and superior insulating properties against applied electric field, irrespective of film thickness. These results open the door to designable size-effect-free materials with high dielectric constant having bias- and temperature-independent characteristics together with superior electrical insulation for high-density capacitor applications.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.2336626</identifier><identifier>CODEN: APPLAB</identifier><publisher>American Institute of Physics</publisher><ispartof>Applied physics letters, 2006-08, Vol.89 (8), p.082901-082901-3</ispartof><rights>2006 American Institute of Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-scitation_primary_10_1063_1_2336626Thickness_dependence3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.2336626$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,777,781,791,1554,4498,27905,27906,76133,76139</link.rule.ids></links><search><creatorcontrib>Takahashi, Kenji</creatorcontrib><creatorcontrib>Suzuki, Muneyasu</creatorcontrib><creatorcontrib>Kojima, Takashi</creatorcontrib><creatorcontrib>Watanabe, Takayuki</creatorcontrib><creatorcontrib>Sakashita, Yukio</creatorcontrib><creatorcontrib>Kato, Kazumi</creatorcontrib><creatorcontrib>Sakata, Osami</creatorcontrib><creatorcontrib>Sumitani, Kazushi</creatorcontrib><creatorcontrib>Funakubo, Hiroshi</creatorcontrib><title>Thickness dependence of dielectric properties in bismuthlayer-structured dielectrics</title><title>Applied physics letters</title><description>c
-axis-oriented epitaxial
Sr
Bi
4
Ti
4
O
15
and
Ca
Bi
4
Ti
4
O
15
films having natural superlattice structure were grown on
(
001
)
c
Sr
Ru
O
3
||
(
001
)
Sr
Ti
O
3
substrates by metal organic chemical vapor deposition.
Sr
Bi
4
Ti
4
O
15
films suffer no degradation with a dielectric constant of 200 down to a film thickness of
15
nm
, which corresponds to four unit cells. Temperature coefficients of capacitance were low enough despite their high dielectric constant. They exhibited stable capacitance and superior insulating properties against applied electric field, irrespective of film thickness. These results open the door to designable size-effect-free materials with high dielectric constant having bias- and temperature-independent characteristics together with superior electrical insulation for high-density capacitor applications.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2006</creationdate><recordtype>article</recordtype><sourceid/><recordid>eNqlzk0KwjAQBeAgCtafhTfIBaoZg6lu3IjiAboPNR1xtE1LJl14exVE3bsaHsx7fELMQM1BGb2A-VJrY5amJxJQWZZqgHVfJEopnZrNCoZixHx9xtXzMRF5fiF388gsS2zRl-gdyuYsS8IKXQzkZBuaFkMkZElenojrLl6q4o4h5Rg6F7uA5U-BJ2JwLirG6fuOxfawz3fHlB3FIlLjbRuoLsLdgrIvtwX7dn889uvRfw88AHAiWmo</recordid><startdate>20060821</startdate><enddate>20060821</enddate><creator>Takahashi, Kenji</creator><creator>Suzuki, Muneyasu</creator><creator>Kojima, Takashi</creator><creator>Watanabe, Takayuki</creator><creator>Sakashita, Yukio</creator><creator>Kato, Kazumi</creator><creator>Sakata, Osami</creator><creator>Sumitani, Kazushi</creator><creator>Funakubo, Hiroshi</creator><general>American Institute of Physics</general><scope/></search><sort><creationdate>20060821</creationdate><title>Thickness dependence of dielectric properties in bismuthlayer-structured dielectrics</title><author>Takahashi, Kenji ; Suzuki, Muneyasu ; Kojima, Takashi ; Watanabe, Takayuki ; Sakashita, Yukio ; Kato, Kazumi ; Sakata, Osami ; Sumitani, Kazushi ; Funakubo, Hiroshi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-scitation_primary_10_1063_1_2336626Thickness_dependence3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><creationdate>2006</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Takahashi, Kenji</creatorcontrib><creatorcontrib>Suzuki, Muneyasu</creatorcontrib><creatorcontrib>Kojima, Takashi</creatorcontrib><creatorcontrib>Watanabe, Takayuki</creatorcontrib><creatorcontrib>Sakashita, Yukio</creatorcontrib><creatorcontrib>Kato, Kazumi</creatorcontrib><creatorcontrib>Sakata, Osami</creatorcontrib><creatorcontrib>Sumitani, Kazushi</creatorcontrib><creatorcontrib>Funakubo, Hiroshi</creatorcontrib><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Takahashi, Kenji</au><au>Suzuki, Muneyasu</au><au>Kojima, Takashi</au><au>Watanabe, Takayuki</au><au>Sakashita, Yukio</au><au>Kato, Kazumi</au><au>Sakata, Osami</au><au>Sumitani, Kazushi</au><au>Funakubo, Hiroshi</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Thickness dependence of dielectric properties in bismuthlayer-structured dielectrics</atitle><jtitle>Applied physics letters</jtitle><date>2006-08-21</date><risdate>2006</risdate><volume>89</volume><issue>8</issue><spage>082901</spage><epage>082901-3</epage><pages>082901-082901-3</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>c
-axis-oriented epitaxial
Sr
Bi
4
Ti
4
O
15
and
Ca
Bi
4
Ti
4
O
15
films having natural superlattice structure were grown on
(
001
)
c
Sr
Ru
O
3
||
(
001
)
Sr
Ti
O
3
substrates by metal organic chemical vapor deposition.
Sr
Bi
4
Ti
4
O
15
films suffer no degradation with a dielectric constant of 200 down to a film thickness of
15
nm
, which corresponds to four unit cells. Temperature coefficients of capacitance were low enough despite their high dielectric constant. They exhibited stable capacitance and superior insulating properties against applied electric field, irrespective of film thickness. These results open the door to designable size-effect-free materials with high dielectric constant having bias- and temperature-independent characteristics together with superior electrical insulation for high-density capacitor applications.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.2336626</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2006-08, Vol.89 (8), p.082901-082901-3 |
| issn | 0003-6951 1077-3118 |
| language | |
| recordid | cdi_scitation_primary_10_1063_1_2336626Thickness_dependence |
| source | AIP Journals Complete; AIP Digital Archive |
| title | Thickness dependence of dielectric properties in bismuthlayer-structured dielectrics |
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