Carrier relaxation dynamics in annealed and hydrogenated ( Ga In ) ( N As ) ∕ Ga As quantum wells

We measured time-resolved photoluminescence on as-grown, annealed, as well as annealed and hydrogenated ( Ga 0.7 In 0.3 ) ( N 0.006 As 0.994 ) ∕ Ga As quantum-well structures. The postgrowth treatment changes not only the photoluminescence decay time but also the intensity of photoluminescence directly after excitation. This initial luminescence intensity is determined by a competition between relaxation of electrons into nitrogen related potential fluctuations in the conduction band and their capture by deep traps. In contrast, the decay of the photoluminescence is mainly determined by the competition between radiative and nonradiative recombination, which are both influenced by localization. Annealing decreases localization effects and nonradiative recombination. Hydrogenation also reduces localization effects but increases nonradiative recombination.