Ferroelectric properties of sol-gel derived Ca modified PbZr 0.52 Ti 0.48 O 3 films
In this letter, we report the ferroelectric properties and leakage current characteristics of Ca modified PbZr 0.52 Ti 0.48 O 3 (PCZT) films prepared by a sol-gel process. The PCZT film of thickness ∼ 1 μ m shows excellent ferroelectric properties in terms of large remnant polarization of ∼ 30 μ C ∕...
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| Veröffentlicht in: | Applied physics letters 2005-09, Vol.87 (13), p.132902-132902-3 |
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| container_title | Applied physics letters |
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| creator | Ezhilvalavan, S. Samper, Victor D. |
| description | In this letter, we report the ferroelectric properties and leakage current characteristics of Ca modified
PbZr
0.52
Ti
0.48
O
3
(PCZT) films prepared by a sol-gel process. The PCZT film of thickness
∼
1
μ
m
shows excellent ferroelectric properties in terms of large remnant polarization of
∼
30
μ
C
∕
cm
2
(
E
c
∼
200
kV
∕
cm
)
, high saturation polarization of about
51
μ
C
∕
cm
2
for an applied field of
915
kV
∕
cm
, fatigue free characteristics up to
⩾
10
10
switching cycles, and a low leakage current density of
5
×
10
−
8
A
∕
cm
2
at
100
kV
∕
cm
. X-ray diffraction, atomic force, and scanning electron microscope investigations indicate that PCZT films deposited on
PbTiO
3
layers exhibit a dense, well-crystallized microstructure having random orientations and a rather smooth surface morphology. |
| doi_str_mv | 10.1063/1.2041820 |
| format | Article |
| fullrecord | <record><control><sourceid>scitation</sourceid><recordid>TN_cdi_scitation_primary_10_1063_1_2041820Ferroelectric_proper</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>apl</sourcerecordid><originalsourceid>FETCH-scitation_primary_10_1063_1_2041820Ferroelectric_proper3</originalsourceid><addsrcrecordid>eNqlzrFuwkAQBNBTRKSYJAV_sD9gZ9eHwTQ0KChdkKCiOTn2Olp05qw9C4m_x1FoUqeamWb0jJkRZoQL-0ZZjnMqc3wwCeFymVqicmISRLTpYlXQk5nGeBpnkVubmP2WVQN7rgeVGnoNPesgHCG0EINPv9lDwyoXbmBTQRcaaWXsu6-jAmZFDgcZc17CJ1hoxXfxxTy2lY_8es9ns96-HzYfaaxlqAYJZ9erdJVeHaH7YTtyd_Yfjvvl2H8f3AAsSlW7</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Ferroelectric properties of sol-gel derived Ca modified PbZr 0.52 Ti 0.48 O 3 films</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><creator>Ezhilvalavan, S. ; Samper, Victor D.</creator><creatorcontrib>Ezhilvalavan, S. ; Samper, Victor D.</creatorcontrib><description>In this letter, we report the ferroelectric properties and leakage current characteristics of Ca modified
PbZr
0.52
Ti
0.48
O
3
(PCZT) films prepared by a sol-gel process. The PCZT film of thickness
∼
1
μ
m
shows excellent ferroelectric properties in terms of large remnant polarization of
∼
30
μ
C
∕
cm
2
(
E
c
∼
200
kV
∕
cm
)
, high saturation polarization of about
51
μ
C
∕
cm
2
for an applied field of
915
kV
∕
cm
, fatigue free characteristics up to
⩾
10
10
switching cycles, and a low leakage current density of
5
×
10
−
8
A
∕
cm
2
at
100
kV
∕
cm
. X-ray diffraction, atomic force, and scanning electron microscope investigations indicate that PCZT films deposited on
PbTiO
3
layers exhibit a dense, well-crystallized microstructure having random orientations and a rather smooth surface morphology.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.2041820</identifier><identifier>CODEN: APPLAB</identifier><publisher>American Institute of Physics</publisher><ispartof>Applied physics letters, 2005-09, Vol.87 (13), p.132902-132902-3</ispartof><rights>2005 American Institute of Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-scitation_primary_10_1063_1_2041820Ferroelectric_proper3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.2041820$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,780,784,794,1559,4512,27924,27925,76384,76390</link.rule.ids></links><search><creatorcontrib>Ezhilvalavan, S.</creatorcontrib><creatorcontrib>Samper, Victor D.</creatorcontrib><title>Ferroelectric properties of sol-gel derived Ca modified PbZr 0.52 Ti 0.48 O 3 films</title><title>Applied physics letters</title><description>In this letter, we report the ferroelectric properties and leakage current characteristics of Ca modified
PbZr
0.52
Ti
0.48
O
3
(PCZT) films prepared by a sol-gel process. The PCZT film of thickness
∼
1
μ
m
shows excellent ferroelectric properties in terms of large remnant polarization of
∼
30
μ
C
∕
cm
2
(
E
c
∼
200
kV
∕
cm
)
, high saturation polarization of about
51
μ
C
∕
cm
2
for an applied field of
915
kV
∕
cm
, fatigue free characteristics up to
⩾
10
10
switching cycles, and a low leakage current density of
5
×
10
−
8
A
∕
cm
2
at
100
kV
∕
cm
. X-ray diffraction, atomic force, and scanning electron microscope investigations indicate that PCZT films deposited on
PbTiO
3
layers exhibit a dense, well-crystallized microstructure having random orientations and a rather smooth surface morphology.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><sourceid/><recordid>eNqlzrFuwkAQBNBTRKSYJAV_sD9gZ9eHwTQ0KChdkKCiOTn2Olp05qw9C4m_x1FoUqeamWb0jJkRZoQL-0ZZjnMqc3wwCeFymVqicmISRLTpYlXQk5nGeBpnkVubmP2WVQN7rgeVGnoNPesgHCG0EINPv9lDwyoXbmBTQRcaaWXsu6-jAmZFDgcZc17CJ1hoxXfxxTy2lY_8es9ns96-HzYfaaxlqAYJZ9erdJVeHaH7YTtyd_Yfjvvl2H8f3AAsSlW7</recordid><startdate>20050921</startdate><enddate>20050921</enddate><creator>Ezhilvalavan, S.</creator><creator>Samper, Victor D.</creator><general>American Institute of Physics</general><scope/></search><sort><creationdate>20050921</creationdate><title>Ferroelectric properties of sol-gel derived Ca modified PbZr 0.52 Ti 0.48 O 3 films</title><author>Ezhilvalavan, S. ; Samper, Victor D.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-scitation_primary_10_1063_1_2041820Ferroelectric_proper3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><creationdate>2005</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ezhilvalavan, S.</creatorcontrib><creatorcontrib>Samper, Victor D.</creatorcontrib><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ezhilvalavan, S.</au><au>Samper, Victor D.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Ferroelectric properties of sol-gel derived Ca modified PbZr 0.52 Ti 0.48 O 3 films</atitle><jtitle>Applied physics letters</jtitle><date>2005-09-21</date><risdate>2005</risdate><volume>87</volume><issue>13</issue><spage>132902</spage><epage>132902-3</epage><pages>132902-132902-3</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>In this letter, we report the ferroelectric properties and leakage current characteristics of Ca modified
PbZr
0.52
Ti
0.48
O
3
(PCZT) films prepared by a sol-gel process. The PCZT film of thickness
∼
1
μ
m
shows excellent ferroelectric properties in terms of large remnant polarization of
∼
30
μ
C
∕
cm
2
(
E
c
∼
200
kV
∕
cm
)
, high saturation polarization of about
51
μ
C
∕
cm
2
for an applied field of
915
kV
∕
cm
, fatigue free characteristics up to
⩾
10
10
switching cycles, and a low leakage current density of
5
×
10
−
8
A
∕
cm
2
at
100
kV
∕
cm
. X-ray diffraction, atomic force, and scanning electron microscope investigations indicate that PCZT films deposited on
PbTiO
3
layers exhibit a dense, well-crystallized microstructure having random orientations and a rather smooth surface morphology.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.2041820</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2005-09, Vol.87 (13), p.132902-132902-3 |
| issn | 0003-6951 1077-3118 |
| language | |
| recordid | cdi_scitation_primary_10_1063_1_2041820Ferroelectric_proper |
| source | AIP Journals Complete; AIP Digital Archive |
| title | Ferroelectric properties of sol-gel derived Ca modified PbZr 0.52 Ti 0.48 O 3 films |
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