Enhanced photoconductivity of ZnO films Co-doped with nitrogenand tellurium
Zinc oxide films are typically found to be n type, and conductive under most growth conditions and growth methods. Co-doping with multiple elements is one strategy for improving the electrical and optical properties of zinc oxide materials for optoelectronic device applications. Using pulsed-laser d...
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| Veröffentlicht in: | Applied physics letters 2005-05, Vol.86 (21), p.211918-211918-3 |
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| container_end_page | 211918-3 |
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| container_issue | 21 |
| container_start_page | 211918 |
| container_title | Applied physics letters |
| container_volume | 86 |
| creator | Porter, H. L. Cai, A. L. Muth, J. F. Narayan, J. |
| description | Zinc oxide films are typically found to be
n
type, and conductive under most growth conditions and growth methods. Co-doping with multiple elements is one strategy for improving the electrical and optical properties of zinc oxide materials for optoelectronic device applications. Using pulsed-laser deposition, thin ZnO films were grown on
c
-axis oriented sapphire. The films were co-doped with nitrogen and tellurium. Depending on the relative concentrations of the dopants, the resistivity of the films was observed to increase by several orders of magnitude, significantly improving the photoconductive response. The enhancement of the photosensitivity reached a maximum at a tellurium concentration of around
10
20
cm
−
3
. |
| doi_str_mv | 10.1063/1.1923194 |
| format | Article |
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n
type, and conductive under most growth conditions and growth methods. Co-doping with multiple elements is one strategy for improving the electrical and optical properties of zinc oxide materials for optoelectronic device applications. Using pulsed-laser deposition, thin ZnO films were grown on
c
-axis oriented sapphire. The films were co-doped with nitrogen and tellurium. Depending on the relative concentrations of the dopants, the resistivity of the films was observed to increase by several orders of magnitude, significantly improving the photoconductive response. The enhancement of the photosensitivity reached a maximum at a tellurium concentration of around
10
20
cm
−
3
.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.1923194</identifier><identifier>CODEN: APPLAB</identifier><publisher>American Institute of Physics</publisher><ispartof>Applied physics letters, 2005-05, Vol.86 (21), p.211918-211918-3</ispartof><rights>2005 American Institute of Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-scitation_primary_10_1063_1_1923194Enhanced_photoconduc3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.1923194$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,780,784,794,1559,4512,27924,27925,76384,76390</link.rule.ids></links><search><creatorcontrib>Porter, H. L.</creatorcontrib><creatorcontrib>Cai, A. L.</creatorcontrib><creatorcontrib>Muth, J. F.</creatorcontrib><creatorcontrib>Narayan, J.</creatorcontrib><title>Enhanced photoconductivity of ZnO films Co-doped with nitrogenand tellurium</title><title>Applied physics letters</title><description>Zinc oxide films are typically found to be
n
type, and conductive under most growth conditions and growth methods. Co-doping with multiple elements is one strategy for improving the electrical and optical properties of zinc oxide materials for optoelectronic device applications. Using pulsed-laser deposition, thin ZnO films were grown on
c
-axis oriented sapphire. The films were co-doped with nitrogen and tellurium. Depending on the relative concentrations of the dopants, the resistivity of the films was observed to increase by several orders of magnitude, significantly improving the photoconductive response. The enhancement of the photosensitivity reached a maximum at a tellurium concentration of around
10
20
cm
−
3
.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><sourceid/><recordid>eNqlzrsKwjAYBeAgCtbL4BvkBVLzG29dXKQiOLg4uYTQi_0lTUqTKr69FSq4Ox0OHA4fITPgIfC1mEMI0UJAtOyRAPhmwwTAtk8Czrlg62gFQzJy7t7W1UKIgJxiUyiTZCmtCuttYk3aJB4f6F_U5vRqzjRHXTq6tyy1Vbt7oi-oQV_bW2aUSanPtG5qbMoJGeRKu2za5ZjsDvFlf2QuQa88WiOrGktVvyRw-eFKkB33y5A_DPH3wRt2zlYv</recordid><startdate>20050520</startdate><enddate>20050520</enddate><creator>Porter, H. L.</creator><creator>Cai, A. L.</creator><creator>Muth, J. F.</creator><creator>Narayan, J.</creator><general>American Institute of Physics</general><scope/></search><sort><creationdate>20050520</creationdate><title>Enhanced photoconductivity of ZnO films Co-doped with nitrogenand tellurium</title><author>Porter, H. L. ; Cai, A. L. ; Muth, J. F. ; Narayan, J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-scitation_primary_10_1063_1_1923194Enhanced_photoconduc3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><creationdate>2005</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Porter, H. L.</creatorcontrib><creatorcontrib>Cai, A. L.</creatorcontrib><creatorcontrib>Muth, J. F.</creatorcontrib><creatorcontrib>Narayan, J.</creatorcontrib><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Porter, H. L.</au><au>Cai, A. L.</au><au>Muth, J. F.</au><au>Narayan, J.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Enhanced photoconductivity of ZnO films Co-doped with nitrogenand tellurium</atitle><jtitle>Applied physics letters</jtitle><date>2005-05-20</date><risdate>2005</risdate><volume>86</volume><issue>21</issue><spage>211918</spage><epage>211918-3</epage><pages>211918-211918-3</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>Zinc oxide films are typically found to be
n
type, and conductive under most growth conditions and growth methods. Co-doping with multiple elements is one strategy for improving the electrical and optical properties of zinc oxide materials for optoelectronic device applications. Using pulsed-laser deposition, thin ZnO films were grown on
c
-axis oriented sapphire. The films were co-doped with nitrogen and tellurium. Depending on the relative concentrations of the dopants, the resistivity of the films was observed to increase by several orders of magnitude, significantly improving the photoconductive response. The enhancement of the photosensitivity reached a maximum at a tellurium concentration of around
10
20
cm
−
3
.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.1923194</doi></addata></record> |
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| ispartof | Applied physics letters, 2005-05, Vol.86 (21), p.211918-211918-3 |
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| recordid | cdi_scitation_primary_10_1063_1_1923194Enhanced_photoconduc |
| source | AIP Journals Complete; AIP Digital Archive |
| title | Enhanced photoconductivity of ZnO films Co-doped with nitrogenand tellurium |
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