Current through Si O 2 gate oxide and its low frequency fluctuations: Trapping on charged dangling bonds with negative Hubbard U

An estimate of Hubbard U supports instability of neutral one-electron Si dangling bonds in Si O 2 and the formation of charged two-electron and two-hole negative U centers through the reaction Si *  + Si *  → Si + + Si − * * . The trapping on these negative U centers creates and annihilates "...

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Veröffentlicht in:	Journal of applied physics 2005-03, Vol.97 (7), p.074104-074104-7
Hauptverfasser:	Moyzhes, Boris, Geballe, Theodore H., Jeong, Steve, Gitlin, Daniel, Karp, James
Format:	Artikel
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