Noncontacting laser photocarrier radiometric depth profilometry of harmonically modulated band bending in the space-charge layer at doped Si O 2 - Si interfaces

Laser infrared photocarrier radiometry (PCR) was used with a harmonically modulated low-power laser pump and a superposed dc superband-gap optical bias (a secondary laser beam) to control and monitor the space-charge-layer (SCL) width in oxidized p - Si - Si O 2 and n - Si - Si O 2 interfaces (wafer...

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Veröffentlicht in:	Journal of applied physics 2005-04, Vol.97 (8), p.083507-083507-11
Hauptverfasser:	Mandelis, Andreas, Batista, Jerias, Gibkes, Jürgen, Pawlak, Michael, Pelzl, Josef
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