Investigation of a 2.45 GHz ECR plasma for ion etching
Reactive ion‐stream etching of SiO2 by CF4 ECR plasma has been investigated using different magnetic configurations. Whereas a permanent multipole field yielded the best results concerning the homogeneity over a large area, the highest etching rates were achieved with a longitudinally gradient field...
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Veröffentlicht in: | Review of Scientific Instruments 1992-04, Vol.63 (4), p.2394-2396, Article 2394 |
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container_title | Review of Scientific Instruments |
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creator | Eichelberger, M. Friedrich, L. Huttel, E. Wiss, L. |
description | Reactive ion‐stream etching of SiO2 by CF4 ECR plasma has been investigated using different magnetic configurations. Whereas a permanent multipole field yielded the best results concerning the homogeneity over a large area, the highest etching rates were achieved with a longitudinally gradient field. |
doi_str_mv | 10.1063/1.1142940 |
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Whereas a permanent multipole field yielded the best results concerning the homogeneity over a large area, the highest etching rates were achieved with a longitudinally gradient field.</abstract><cop>WOODBURY</cop><pub>Amer Inst Physics</pub><doi>10.1063/1.1142940</doi><tpages>3</tpages></addata></record> |
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source | Web of Science - Science Citation Index Expanded - 1992<img src="https://exlibris-pub.s3.amazonaws.com/fromwos-v2.jpg" />; AIP Digital Archive |
subjects | Atomic, molecular and charged-particle sources and detectors Charged-particle beam sources and detectors Exact sciences and technology Instruments & Instrumentation Instruments, apparatus, components and techniques common to several branches of physics and astronomy Physical Sciences Physics Physics, Applied Science & Technology Technology |
title | Investigation of a 2.45 GHz ECR plasma for ion etching |
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