Investigation of a 2.45 GHz ECR plasma for ion etching

Reactive ion‐stream etching of SiO2 by CF4 ECR plasma has been investigated using different magnetic configurations. Whereas a permanent multipole field yielded the best results concerning the homogeneity over a large area, the highest etching rates were achieved with a longitudinally gradient field...

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Veröffentlicht in:Review of Scientific Instruments 1992-04, Vol.63 (4), p.2394-2396, Article 2394
Hauptverfasser: Eichelberger, M., Friedrich, L., Huttel, E., Wiss, L.
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container_issue 4
container_start_page 2394
container_title Review of Scientific Instruments
container_volume 63
creator Eichelberger, M.
Friedrich, L.
Huttel, E.
Wiss, L.
description Reactive ion‐stream etching of SiO2 by CF4 ECR plasma has been investigated using different magnetic configurations. Whereas a permanent multipole field yielded the best results concerning the homogeneity over a large area, the highest etching rates were achieved with a longitudinally gradient field.
doi_str_mv 10.1063/1.1142940
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subjects Atomic, molecular and charged-particle sources and detectors
Charged-particle beam sources and detectors
Exact sciences and technology
Instruments & Instrumentation
Instruments, apparatus, components and techniques common to several branches of physics and astronomy
Physical Sciences
Physics
Physics, Applied
Science & Technology
Technology
title Investigation of a 2.45 GHz ECR plasma for ion etching
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