Optoelectronic stimuli-driven switchable memristors with multilevel resistance states for neuromorphic vision sensors

Advancements in next-generation artificial intelligence technology have revolutionized neuromorphic visual systems by surpassing the limitations of the visible light range. However, the intricate circuitry of artificial visual systems, which relies on traditional image sensors, processing units, and...

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Veröffentlicht in:	Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2024-12, Vol.13 (1), p.445-455
Hauptverfasser:	Selvaraj, Pravinraj, Chen, Meng-Lin, Adat, Sreeshyam, Wang, Yu-Wu
Format:	Artikel
Sprache:	eng
Schlagworte:	Artificial intelligence Circuits Memory devices Memristors Optical memory (data storage) Optoelectronic devices Pattern recognition Random access memory Robustness Sensors Vision systems Visual stimuli
Online-Zugang:	Volltext
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