Oxidation-induced modulation of photoresponsivity in monolayer MoS with sulfur vacancies

Two-dimensional transition metal dichalcogenides (TMDs), such as MoS 2 , hold great promise for next-generation electronics and optoelectronics due to their unique properties. However, the ultrathin nature of these materials renders them vulnerable to structural defects and environmental factors, wh...

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Veröffentlicht in:	Nanoscale 2024-10, Vol.16 (42), p.19834-19843
Hauptverfasser:	Abidi, Irfan H, Bhoriya, Ankit, Vashishtha, Pargam, Giridhar, Sindhu Priya, Mayes, Edwin L. H, Sehrawat, Manoj, Verma, Ajay Kumar, Aggarwal, Vishnu, Gupta, Tanish, Singh, H. K, Ahmed, Taimur, Dilawar Sharma, Nita, Walia, Sumeet
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