A broadband self-powered photodetector based on NiPS
Self-powered photodetectors have been attracting more and more attention due to the energy shortage issues around the world. As a type of layered van der Waals material, NiPS 3 has garnered much attention in the realms of optoelectronics. In order to excavate the possible self-powered potential of t...
Gespeichert in:
| Veröffentlicht in: | Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2024-01, Vol.12 (2), p.593-599 |
|---|---|
| Hauptverfasser: | , , , , , , , , , |
| Format: | Artikel |
| Sprache: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 599 |
|---|---|
| container_issue | 2 |
| container_start_page | 593 |
| container_title | Journal of materials chemistry. C, Materials for optical and electronic devices |
| container_volume | 12 |
| creator | Zong, Linghao Song, Jiaming Wang, Shuxian Chen, Wenhui Yang, Juanjuan Li, Bingda Hu, Peng Fan, Haibo Teng, Feng Zhao, Xin |
| description | Self-powered photodetectors have been attracting more and more attention due to the energy shortage issues around the world. As a type of layered van der Waals material, NiPS
3
has garnered much attention in the realms of optoelectronics. In order to excavate the possible self-powered potential of this material, we utilized the asymmetric electrode contact design in the device structure of a NiPS
3
-based photodetector. Photoelectric characterization of the device presented a broadband spectral detection range from 254 nm to 1020 nm. The device showed a zero-bias photoelectric response with responsivity and detectivity of 2.3 mA W
−1
and 6.2 × 10
9
Jones, respectively. Moreover, this photodetector exhibited a response time of less than 40 ms for both rising and decay times and low dark current (∼pA). The self-powered phenomenon is possibly attributed to the unbalanced Schottky barriers of the two electrode contacts. This study provides a potential route for van der Waals material-based photoelectric devices applied in wearable photoelectronic devices and green energy economy.
The NiPS
3
-based self-powered photodetector with asymmetric electrode contact design demonstrated prominent photoelectric detection ability, which provides a potential route for applications in wearable photoelectronic devices and green energy economy. |
| doi_str_mv | 10.1039/d3tc03804a |
| format | Article |
| fullrecord | <record><control><sourceid>rsc</sourceid><recordid>TN_cdi_rsc_primary_d3tc03804a</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>d3tc03804a</sourcerecordid><originalsourceid>FETCH-rsc_primary_d3tc03804a3</originalsourceid><addsrcrecordid>eNpjYBAyNNAzNDC21E8xLkk2MLYwMElkYuA0MjA10DU3NTZhgbONzDgYeIuLswyAwMLQzMLMkpPBxFEhqSg_MSUpMS9FoTg1J023IL88tSg1RaEgI78kPyW1JDW5JL9IISmxGCiWn6fglxkQzMPAmpaYU5zKC6W5GWTdXEOcPXSLipPjC4oycxOLKuMRrjEmJA8AHMA2rQ</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>A broadband self-powered photodetector based on NiPS</title><source>Royal Society Of Chemistry Journals 2008-</source><creator>Zong, Linghao ; Song, Jiaming ; Wang, Shuxian ; Chen, Wenhui ; Yang, Juanjuan ; Li, Bingda ; Hu, Peng ; Fan, Haibo ; Teng, Feng ; Zhao, Xin</creator><creatorcontrib>Zong, Linghao ; Song, Jiaming ; Wang, Shuxian ; Chen, Wenhui ; Yang, Juanjuan ; Li, Bingda ; Hu, Peng ; Fan, Haibo ; Teng, Feng ; Zhao, Xin</creatorcontrib><description>Self-powered photodetectors have been attracting more and more attention due to the energy shortage issues around the world. As a type of layered van der Waals material, NiPS
3
has garnered much attention in the realms of optoelectronics. In order to excavate the possible self-powered potential of this material, we utilized the asymmetric electrode contact design in the device structure of a NiPS
3
-based photodetector. Photoelectric characterization of the device presented a broadband spectral detection range from 254 nm to 1020 nm. The device showed a zero-bias photoelectric response with responsivity and detectivity of 2.3 mA W
−1
and 6.2 × 10
9
Jones, respectively. Moreover, this photodetector exhibited a response time of less than 40 ms for both rising and decay times and low dark current (∼pA). The self-powered phenomenon is possibly attributed to the unbalanced Schottky barriers of the two electrode contacts. This study provides a potential route for van der Waals material-based photoelectric devices applied in wearable photoelectronic devices and green energy economy.
The NiPS
3
-based self-powered photodetector with asymmetric electrode contact design demonstrated prominent photoelectric detection ability, which provides a potential route for applications in wearable photoelectronic devices and green energy economy.</description><identifier>ISSN: 2050-7526</identifier><identifier>EISSN: 2050-7534</identifier><identifier>DOI: 10.1039/d3tc03804a</identifier><ispartof>Journal of materials chemistry. C, Materials for optical and electronic devices, 2024-01, Vol.12 (2), p.593-599</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>315,781,785,27929,27930</link.rule.ids></links><search><creatorcontrib>Zong, Linghao</creatorcontrib><creatorcontrib>Song, Jiaming</creatorcontrib><creatorcontrib>Wang, Shuxian</creatorcontrib><creatorcontrib>Chen, Wenhui</creatorcontrib><creatorcontrib>Yang, Juanjuan</creatorcontrib><creatorcontrib>Li, Bingda</creatorcontrib><creatorcontrib>Hu, Peng</creatorcontrib><creatorcontrib>Fan, Haibo</creatorcontrib><creatorcontrib>Teng, Feng</creatorcontrib><creatorcontrib>Zhao, Xin</creatorcontrib><title>A broadband self-powered photodetector based on NiPS</title><title>Journal of materials chemistry. C, Materials for optical and electronic devices</title><description>Self-powered photodetectors have been attracting more and more attention due to the energy shortage issues around the world. As a type of layered van der Waals material, NiPS
3
has garnered much attention in the realms of optoelectronics. In order to excavate the possible self-powered potential of this material, we utilized the asymmetric electrode contact design in the device structure of a NiPS
3
-based photodetector. Photoelectric characterization of the device presented a broadband spectral detection range from 254 nm to 1020 nm. The device showed a zero-bias photoelectric response with responsivity and detectivity of 2.3 mA W
−1
and 6.2 × 10
9
Jones, respectively. Moreover, this photodetector exhibited a response time of less than 40 ms for both rising and decay times and low dark current (∼pA). The self-powered phenomenon is possibly attributed to the unbalanced Schottky barriers of the two electrode contacts. This study provides a potential route for van der Waals material-based photoelectric devices applied in wearable photoelectronic devices and green energy economy.
The NiPS
3
-based self-powered photodetector with asymmetric electrode contact design demonstrated prominent photoelectric detection ability, which provides a potential route for applications in wearable photoelectronic devices and green energy economy.</description><issn>2050-7526</issn><issn>2050-7534</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><sourceid/><recordid>eNpjYBAyNNAzNDC21E8xLkk2MLYwMElkYuA0MjA10DU3NTZhgbONzDgYeIuLswyAwMLQzMLMkpPBxFEhqSg_MSUpMS9FoTg1J023IL88tSg1RaEgI78kPyW1JDW5JL9IISmxGCiWn6fglxkQzMPAmpaYU5zKC6W5GWTdXEOcPXSLipPjC4oycxOLKuMRrjEmJA8AHMA2rQ</recordid><startdate>20240104</startdate><enddate>20240104</enddate><creator>Zong, Linghao</creator><creator>Song, Jiaming</creator><creator>Wang, Shuxian</creator><creator>Chen, Wenhui</creator><creator>Yang, Juanjuan</creator><creator>Li, Bingda</creator><creator>Hu, Peng</creator><creator>Fan, Haibo</creator><creator>Teng, Feng</creator><creator>Zhao, Xin</creator><scope/></search><sort><creationdate>20240104</creationdate><title>A broadband self-powered photodetector based on NiPS</title><author>Zong, Linghao ; Song, Jiaming ; Wang, Shuxian ; Chen, Wenhui ; Yang, Juanjuan ; Li, Bingda ; Hu, Peng ; Fan, Haibo ; Teng, Feng ; Zhao, Xin</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-rsc_primary_d3tc03804a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><creationdate>2024</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zong, Linghao</creatorcontrib><creatorcontrib>Song, Jiaming</creatorcontrib><creatorcontrib>Wang, Shuxian</creatorcontrib><creatorcontrib>Chen, Wenhui</creatorcontrib><creatorcontrib>Yang, Juanjuan</creatorcontrib><creatorcontrib>Li, Bingda</creatorcontrib><creatorcontrib>Hu, Peng</creatorcontrib><creatorcontrib>Fan, Haibo</creatorcontrib><creatorcontrib>Teng, Feng</creatorcontrib><creatorcontrib>Zhao, Xin</creatorcontrib><jtitle>Journal of materials chemistry. C, Materials for optical and electronic devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zong, Linghao</au><au>Song, Jiaming</au><au>Wang, Shuxian</au><au>Chen, Wenhui</au><au>Yang, Juanjuan</au><au>Li, Bingda</au><au>Hu, Peng</au><au>Fan, Haibo</au><au>Teng, Feng</au><au>Zhao, Xin</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A broadband self-powered photodetector based on NiPS</atitle><jtitle>Journal of materials chemistry. C, Materials for optical and electronic devices</jtitle><date>2024-01-04</date><risdate>2024</risdate><volume>12</volume><issue>2</issue><spage>593</spage><epage>599</epage><pages>593-599</pages><issn>2050-7526</issn><eissn>2050-7534</eissn><abstract>Self-powered photodetectors have been attracting more and more attention due to the energy shortage issues around the world. As a type of layered van der Waals material, NiPS
3
has garnered much attention in the realms of optoelectronics. In order to excavate the possible self-powered potential of this material, we utilized the asymmetric electrode contact design in the device structure of a NiPS
3
-based photodetector. Photoelectric characterization of the device presented a broadband spectral detection range from 254 nm to 1020 nm. The device showed a zero-bias photoelectric response with responsivity and detectivity of 2.3 mA W
−1
and 6.2 × 10
9
Jones, respectively. Moreover, this photodetector exhibited a response time of less than 40 ms for both rising and decay times and low dark current (∼pA). The self-powered phenomenon is possibly attributed to the unbalanced Schottky barriers of the two electrode contacts. This study provides a potential route for van der Waals material-based photoelectric devices applied in wearable photoelectronic devices and green energy economy.
The NiPS
3
-based self-powered photodetector with asymmetric electrode contact design demonstrated prominent photoelectric detection ability, which provides a potential route for applications in wearable photoelectronic devices and green energy economy.</abstract><doi>10.1039/d3tc03804a</doi><tpages>7</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 2050-7526 |
| ispartof | Journal of materials chemistry. C, Materials for optical and electronic devices, 2024-01, Vol.12 (2), p.593-599 |
| issn | 2050-7526 2050-7534 |
| language | |
| recordid | cdi_rsc_primary_d3tc03804a |
| source | Royal Society Of Chemistry Journals 2008- |
| title | A broadband self-powered photodetector based on NiPS |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-15T08%3A42%3A54IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-rsc&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=A%20broadband%20self-powered%20photodetector%20based%20on%20NiPS&rft.jtitle=Journal%20of%20materials%20chemistry.%20C,%20Materials%20for%20optical%20and%20electronic%20devices&rft.au=Zong,%20Linghao&rft.date=2024-01-04&rft.volume=12&rft.issue=2&rft.spage=593&rft.epage=599&rft.pages=593-599&rft.issn=2050-7526&rft.eissn=2050-7534&rft_id=info:doi/10.1039/d3tc03804a&rft_dat=%3Crsc%3Ed3tc03804a%3C/rsc%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |