Tungsten dichalcogenide WSSe films single source precursor low-pressure CVD and their (thermo-)electric properties

Semiconducting transition metal dichalcogenides have gained increased interest as potential alternatives to graphene due to their tunable electronic bandgaps. In this study, we present the deposition of stoichiometric WS 2 x Se 2−2 x (0 ≤ x ≤ 1) binary and ternary thin films using the single source...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Journal of materials chemistry. A, Materials for energy and sustainability Materials for energy and sustainability, 2023-05, Vol.11 (17), p.9635-9645
Hauptverfasser:	Sethi, V, Runacres, D, Greenacre, V, Shao, Li, Hector, A. L, Levason, W, de Groot, C. H, Reid, G, Huang, R
Format:	Artikel
Sprache:
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!