Effects of thermal annealing on analog resistive switching behavior in bilayer HfO/ZnO synaptic devices: the role of ZnO grain boundaries

The effects of thermal annealing on analog resistive switching behavior in bilayer HfO 2 /ZnO synaptic devices were investigated. The annealed active ZnO layer between the top Pd electrode and the HfO 2 layer exhibited electroforming-free resistive switching. In particular, the switching uniformity,...

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Veröffentlicht in:	Nanoscale 2024-02, Vol.16 (9), p.469-4619
Hauptverfasser:	An, Yeong-Jin, Yan, Han, Yeom, Chae-min, Jeong, Jun-kyo, Eadi, Sunil Babu, Lee, Hi-Deok, Kwon, Hyuk-Min
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