An all-inorganic Li-doped CsCuI single crystal for dual gamma ray and neutron detection applications
Recently, the all-inorganic metal halide Cs 3 Cu 2 I 5 has attracted extensive attention because of its potential use in X-ray and gamma ray detection. Herein, a high-quality and efficient Li + -doped Cs 3 Cu 2 I 5 single crystal with good air stability was grown and utilized for dual gamma ray and...
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Veröffentlicht in: | Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2022-10, Vol.1 (41), p.154-1547 |
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Zusammenfassung: | Recently, the all-inorganic metal halide Cs
3
Cu
2
I
5
has attracted extensive attention because of its potential use in X-ray and gamma ray detection. Herein, a high-quality and efficient Li
+
-doped Cs
3
Cu
2
I
5
single crystal with good air stability was grown and utilized for dual gamma ray and neutron detection for the first time. X-ray diffraction, X-ray photoelectron spectroscopy, inductively coupled plasma optical emission spectrometry, and nuclear magnetic resonance were employed to prove that Li
+
was successfully introduced into Cs
3
Cu
2
I
5
, and the lattice sites of Li
+
were investigated. The photoluminescence quantum efficiency of the Cs
3
Cu
2
I
5
crystal was improved from 83.4% to 88.6%
via
Li
+
doping. The photoluminescence and X-ray results showed that the emission peak of Cs
3
Cu
2
I
5
:Li was located at 445 nm and was ascribed to the self-trapped exciton emission. The light yield and energy resolution of the Cs
3
Cu
2
I
5
crystal were significantly improved under
137
Cs irradiation after Li
+
doping. The effects of the Li
+
doping on the performance were also investigated. In particular, the Cs
3
Cu
2
I
5
:Li crystal achieved an excellent figure-of-merit of 2.25, which showed its significant potential for dual gamma-ray and neutron detection applications.
Study on the growth and scintillation mechanism of Li
+
-doped Cs
3
Cu
2
I
5
crystal with an excellent FOM value for dual gamma-ray and neutron detection applications. |
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ISSN: | 2050-7526 2050-7534 |
DOI: | 10.1039/d2tc02674k |