2D semiconductor SnPS as a new dielectric material for 2D electronics

Due to the intriguing optical and electronic properties, 2D materials are promising for next generation optoelectronic and electric device applications. Exploring new 2D materials with novel physical properties is rewarding for this area. In this work, we systematically investigated the optoelectronic properties of 2D metal thiophosphate SnP 2 S 6 with a unique nanoporous structure. The intermediate bandgap makes SnP 2 S 6 a good candidate for both the channel and gate dielectric materials in the transistor device. SnP 2 S 6 showed good photoresponse properties. In addition, the MoS 2 transistor with SnP 2 S 6 as a dielectric layer showed a high dielectric constant ( 23) and a low subthreshold slope down to 69.4 mV dec −1 , and it presented 0.1 pA scale leakage current, a threshold voltage as low as 1.1 V, an ON/OFF ratio reaching 10 7 and negligible hysteresis with high stability and reproducibility. This work could open up new avenues for the discovery of new metal thiophosphate systems for future device applications. 2D metal thiophosphate SnP 2 S 6 was discovered as a new dielectric layer with a high dielectric constant ( 23), realizing a low subthreshold slope down to 69.4 mV dec −1 in the field effect transistor device geometry.