Stepwise growth of crystalline MoS in atomic layer deposition

Atomic layer deposition (ALD) is considered a promising growth technique for transition metal dichalcogenides (TMDCs) because it ensures uniformity and homogeneity of the TMDC grains. However, the poor crystallinity of ALD-grown TMDCs remains a critical challenge. Although crystallinity depends on t...

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Veröffentlicht in:	Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2022-05, Vol.1 (18), p.731-738
Hauptverfasser:	Cho, Ah-Jin, Ryu, Seung Ho, Yim, Jae Gyun, Baek, In-Hwan, Pyeon, Jung Joon, Won, Sung Ok, Baek, Seung-Hyub, Kang, Chong-Yun, Kim, Seong Keun
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