Zn ion doping for structural modulation of lead-free Sn-based perovskite solar cells

Sn-based perovskites have intrinsic defects, such as Sn vacancies, oxidised components (Sn 4+ ), and local lattice strain in the perovskite crystalline structure. In this study, Zn metal powder (Zn 0 ) was introduced to reduce Sn oxidation in the solution step based on the redox potential difference...

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Veröffentlicht in:Journal of materials chemistry. A, Materials for energy and sustainability Materials for energy and sustainability, 2023-05, Vol.11 (2), p.165-1611
Hauptverfasser: Jang, Hyungsu, Lim, Hyeong Yong, Park, Chan Beom, Seo, Jongdeuk, Son, Jung Geon, Song, Taehee, Lee, Jaehwi, Shin, Yun Seop, Roe, Jina, Kwak, Sang Kyu, Kim, Dong Suk, Kim, Jin Young
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container_issue 2
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container_title Journal of materials chemistry. A, Materials for energy and sustainability
container_volume 11
creator Jang, Hyungsu
Lim, Hyeong Yong
Park, Chan Beom
Seo, Jongdeuk
Son, Jung Geon
Song, Taehee
Lee, Jaehwi
Shin, Yun Seop
Roe, Jina
Kwak, Sang Kyu
Kim, Dong Suk
Kim, Jin Young
description Sn-based perovskites have intrinsic defects, such as Sn vacancies, oxidised components (Sn 4+ ), and local lattice strain in the perovskite crystalline structure. In this study, Zn metal powder (Zn 0 ) was introduced to reduce Sn oxidation in the solution step based on the redox potential difference. Additionally, Zn 2+ was introduced in the perovskite precursor, which decreased the intrinsic defects and lattice strain of the perovskite films. The diffusion length, particularly that of the hole, increased with a reduction in the lattice strain, and Zn doping led to interfacial energy-level alignment of the perovskite and hole-transporting layers. The reduced lattice strain decreased the defect density and charge carrier recombination of perovskite devices. The power conversion efficiency of the Zn-doped Sn-based perovskite solar cell was improved to 11.39% compared to the 8.56% of the reference device. A facile method of Zn ion doping into Sn-based perovskite through a redox potential difference causes lattice strain relaxation, resulting in the enhancement of optoelectronic properties.
doi_str_mv 10.1039/d2ta09793a
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title Zn ion doping for structural modulation of lead-free Sn-based perovskite solar cells
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