Zn ion doping for structural modulation of lead-free Sn-based perovskite solar cells
Sn-based perovskites have intrinsic defects, such as Sn vacancies, oxidised components (Sn 4+ ), and local lattice strain in the perovskite crystalline structure. In this study, Zn metal powder (Zn 0 ) was introduced to reduce Sn oxidation in the solution step based on the redox potential difference...
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container_title | Journal of materials chemistry. A, Materials for energy and sustainability |
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creator | Jang, Hyungsu Lim, Hyeong Yong Park, Chan Beom Seo, Jongdeuk Son, Jung Geon Song, Taehee Lee, Jaehwi Shin, Yun Seop Roe, Jina Kwak, Sang Kyu Kim, Dong Suk Kim, Jin Young |
description | Sn-based perovskites have intrinsic defects, such as Sn vacancies, oxidised components (Sn
4+
), and local lattice strain in the perovskite crystalline structure. In this study, Zn metal powder (Zn
0
) was introduced to reduce Sn oxidation in the solution step based on the redox potential difference. Additionally, Zn
2+
was introduced in the perovskite precursor, which decreased the intrinsic defects and lattice strain of the perovskite films. The diffusion length, particularly that of the hole, increased with a reduction in the lattice strain, and Zn doping led to interfacial energy-level alignment of the perovskite and hole-transporting layers. The reduced lattice strain decreased the defect density and charge carrier recombination of perovskite devices. The power conversion efficiency of the Zn-doped Sn-based perovskite solar cell was improved to 11.39% compared to the 8.56% of the reference device.
A facile method of Zn ion doping into Sn-based perovskite through a redox potential difference causes lattice strain relaxation, resulting in the enhancement of optoelectronic properties. |
doi_str_mv | 10.1039/d2ta09793a |
format | Article |
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4+
), and local lattice strain in the perovskite crystalline structure. In this study, Zn metal powder (Zn
0
) was introduced to reduce Sn oxidation in the solution step based on the redox potential difference. Additionally, Zn
2+
was introduced in the perovskite precursor, which decreased the intrinsic defects and lattice strain of the perovskite films. The diffusion length, particularly that of the hole, increased with a reduction in the lattice strain, and Zn doping led to interfacial energy-level alignment of the perovskite and hole-transporting layers. The reduced lattice strain decreased the defect density and charge carrier recombination of perovskite devices. The power conversion efficiency of the Zn-doped Sn-based perovskite solar cell was improved to 11.39% compared to the 8.56% of the reference device.
A facile method of Zn ion doping into Sn-based perovskite through a redox potential difference causes lattice strain relaxation, resulting in the enhancement of optoelectronic properties.</description><identifier>ISSN: 2050-7488</identifier><identifier>EISSN: 2050-7496</identifier><identifier>DOI: 10.1039/d2ta09793a</identifier><language>eng</language><ispartof>Journal of materials chemistry. A, Materials for energy and sustainability, 2023-05, Vol.11 (2), p.165-1611</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>315,781,785,27929,27930</link.rule.ids></links><search><creatorcontrib>Jang, Hyungsu</creatorcontrib><creatorcontrib>Lim, Hyeong Yong</creatorcontrib><creatorcontrib>Park, Chan Beom</creatorcontrib><creatorcontrib>Seo, Jongdeuk</creatorcontrib><creatorcontrib>Son, Jung Geon</creatorcontrib><creatorcontrib>Song, Taehee</creatorcontrib><creatorcontrib>Lee, Jaehwi</creatorcontrib><creatorcontrib>Shin, Yun Seop</creatorcontrib><creatorcontrib>Roe, Jina</creatorcontrib><creatorcontrib>Kwak, Sang Kyu</creatorcontrib><creatorcontrib>Kim, Dong Suk</creatorcontrib><creatorcontrib>Kim, Jin Young</creatorcontrib><title>Zn ion doping for structural modulation of lead-free Sn-based perovskite solar cells</title><title>Journal of materials chemistry. A, Materials for energy and sustainability</title><description>Sn-based perovskites have intrinsic defects, such as Sn vacancies, oxidised components (Sn
4+
), and local lattice strain in the perovskite crystalline structure. In this study, Zn metal powder (Zn
0
) was introduced to reduce Sn oxidation in the solution step based on the redox potential difference. Additionally, Zn
2+
was introduced in the perovskite precursor, which decreased the intrinsic defects and lattice strain of the perovskite films. The diffusion length, particularly that of the hole, increased with a reduction in the lattice strain, and Zn doping led to interfacial energy-level alignment of the perovskite and hole-transporting layers. The reduced lattice strain decreased the defect density and charge carrier recombination of perovskite devices. The power conversion efficiency of the Zn-doped Sn-based perovskite solar cell was improved to 11.39% compared to the 8.56% of the reference device.
A facile method of Zn ion doping into Sn-based perovskite through a redox potential difference causes lattice strain relaxation, resulting in the enhancement of optoelectronic properties.</description><issn>2050-7488</issn><issn>2050-7496</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><sourceid/><recordid>eNpFkE1LAzEURYNYsNRu3Av5A9FMMsnkLaX4USi4cFbdlDeTREbTyZBkBP-9FkXv5tzF4S4uIVcVv6m4hFsrCnJoQOIZWQquOGtq0Od_3ZgLss75jX_HcK4BlqTdj3SII7VxGsZX6mOiuaS5L3PCQI_RzgHLSYieBoeW-eQcfRlZh9lZOrkUP_L7UBzNMWCivQshX5KFx5Dd-pcr0j7ct5sntnt-3G7udiyBKAwUKA6I0PvOG_BWeOg6DZVVom68VhaNQl0ZrbxQTS0bqLBHEGBOvpQrcv0zm3J_mNJwxPR5-D9BfgELLlCZ</recordid><startdate>20230523</startdate><enddate>20230523</enddate><creator>Jang, Hyungsu</creator><creator>Lim, Hyeong Yong</creator><creator>Park, Chan Beom</creator><creator>Seo, Jongdeuk</creator><creator>Son, Jung Geon</creator><creator>Song, Taehee</creator><creator>Lee, Jaehwi</creator><creator>Shin, Yun Seop</creator><creator>Roe, Jina</creator><creator>Kwak, Sang Kyu</creator><creator>Kim, Dong Suk</creator><creator>Kim, Jin Young</creator><scope/></search><sort><creationdate>20230523</creationdate><title>Zn ion doping for structural modulation of lead-free Sn-based perovskite solar cells</title><author>Jang, Hyungsu ; Lim, Hyeong Yong ; Park, Chan Beom ; Seo, Jongdeuk ; Son, Jung Geon ; Song, Taehee ; Lee, Jaehwi ; Shin, Yun Seop ; Roe, Jina ; Kwak, Sang Kyu ; Kim, Dong Suk ; Kim, Jin Young</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-r92t-959509aa9cfbf89fd2f9bb691d5247f65da85a61865f25743791aca9298bf8933</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Jang, Hyungsu</creatorcontrib><creatorcontrib>Lim, Hyeong Yong</creatorcontrib><creatorcontrib>Park, Chan Beom</creatorcontrib><creatorcontrib>Seo, Jongdeuk</creatorcontrib><creatorcontrib>Son, Jung Geon</creatorcontrib><creatorcontrib>Song, Taehee</creatorcontrib><creatorcontrib>Lee, Jaehwi</creatorcontrib><creatorcontrib>Shin, Yun Seop</creatorcontrib><creatorcontrib>Roe, Jina</creatorcontrib><creatorcontrib>Kwak, Sang Kyu</creatorcontrib><creatorcontrib>Kim, Dong Suk</creatorcontrib><creatorcontrib>Kim, Jin Young</creatorcontrib><jtitle>Journal of materials chemistry. A, Materials for energy and sustainability</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Jang, Hyungsu</au><au>Lim, Hyeong Yong</au><au>Park, Chan Beom</au><au>Seo, Jongdeuk</au><au>Son, Jung Geon</au><au>Song, Taehee</au><au>Lee, Jaehwi</au><au>Shin, Yun Seop</au><au>Roe, Jina</au><au>Kwak, Sang Kyu</au><au>Kim, Dong Suk</au><au>Kim, Jin Young</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Zn ion doping for structural modulation of lead-free Sn-based perovskite solar cells</atitle><jtitle>Journal of materials chemistry. A, Materials for energy and sustainability</jtitle><date>2023-05-23</date><risdate>2023</risdate><volume>11</volume><issue>2</issue><spage>165</spage><epage>1611</epage><pages>165-1611</pages><issn>2050-7488</issn><eissn>2050-7496</eissn><abstract>Sn-based perovskites have intrinsic defects, such as Sn vacancies, oxidised components (Sn
4+
), and local lattice strain in the perovskite crystalline structure. In this study, Zn metal powder (Zn
0
) was introduced to reduce Sn oxidation in the solution step based on the redox potential difference. Additionally, Zn
2+
was introduced in the perovskite precursor, which decreased the intrinsic defects and lattice strain of the perovskite films. The diffusion length, particularly that of the hole, increased with a reduction in the lattice strain, and Zn doping led to interfacial energy-level alignment of the perovskite and hole-transporting layers. The reduced lattice strain decreased the defect density and charge carrier recombination of perovskite devices. The power conversion efficiency of the Zn-doped Sn-based perovskite solar cell was improved to 11.39% compared to the 8.56% of the reference device.
A facile method of Zn ion doping into Sn-based perovskite through a redox potential difference causes lattice strain relaxation, resulting in the enhancement of optoelectronic properties.</abstract><doi>10.1039/d2ta09793a</doi><tpages>7</tpages></addata></record> |
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source | Royal Society Of Chemistry Journals 2008- |
title | Zn ion doping for structural modulation of lead-free Sn-based perovskite solar cells |
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