Tandem organic solar cells with 18.67% efficiency careful subcell design and selection

The use of tandem structures is an efficient way to simultaneously tackle the absorption and thermalization losses of single junction solar cells and the subcell active layer design and selection always play a crucial role in the construction of tandem organic solar cells. In this work, a wide bandg...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Journal of materials chemistry. A, Materials for energy and sustainability Materials for energy and sustainability, 2022-05, Vol.1 (2), p.11238-11245
Hauptverfasser: Huang, Yuzhong, Meng, Lingxian, Liang, Huazhe, Li, Mingpeng, Chen, Hongbin, Jiang, Changzun, Zhang, Kai, Huang, Fei, Yao, Zhaoyang, Li, Chenxi, Wan, Xiangjian, Chen, Yongsheng
Format: Artikel
Sprache:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The use of tandem structures is an efficient way to simultaneously tackle the absorption and thermalization losses of single junction solar cells and the subcell active layer design and selection always play a crucial role in the construction of tandem organic solar cells. In this work, a wide bandgap acceptor F-ThBr with the fluorene core and brominated thiophene-fused end group has been designed. The device based on D18:F-ThBr offers a PCE of 13.02% with a high V oc of 1.089 V, a J sc of 16.68 mA cm −2 and a FF of 71.69%, which makes it a good candidate as a front cell for the construction of tandem OSCs. Meanwhile, in view of the complimentary absorption with F-ThBr and high V oc , PM6:CH1007:PC 71 BM is selected and optimized as the rear cell. Using the above subcells, a solution-processed tandem OSC is constructed and demonstrates a power conversion efficiency of 18.67%. A low band gap acceptor F-ThBr is designed for the front cell and CH1007 is selected for the rear cell. Using the two acceptors, a tandem OSC is fabricated and offers an efficiency of 18.67%.
ISSN:2050-7488
2050-7496
DOI:10.1039/d2ta01592g