Atomic layer deposition of SnO using hydrogen peroxide improves the efficiency and stability of perovskite solar cells
Low-temperature processed SnO 2 is a promising electron transporting layer in perovskite solar cells (PSCs) due to its optoelectronic advantage. Atomic layer deposition (ALD) is suitable for forming a conformal SnO 2 layer on a high-haze substrate. However, oxygen vacancy formed by the conventional...
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| Veröffentlicht in: | Nanoscale 2023-03, Vol.15 (1), p.544-552 |
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| creator | Lee, Sang-Uk Park, Hyoungmin Shin, Hyunjung Park, Nam-Gyu |
| description | Low-temperature processed SnO
2
is a promising electron transporting layer in perovskite solar cells (PSCs) due to its optoelectronic advantage. Atomic layer deposition (ALD) is suitable for forming a conformal SnO
2
layer on a high-haze substrate. However, oxygen vacancy formed by the conventional ALD process using H
2
O might have a detrimental effect on the efficiency and stability of PSCs. Here, we report on the photovoltaic performance and stability of PSCs based on the ALD-SnO
2
layer with low oxygen vacancies fabricated
via
H
2
O
2
. Compared to the ALD-SnO
2
layer formed using H
2
O vapors, the ALD-SnO
2
layer prepared
via
H
2
O
2
shows better electron extraction due to a reduced oxygen vacancy associated with the highly oxidizing nature of H
2
O
2
. As a result, the power conversion efficiency (PCE) is enhanced from 21.42% for H
2
O to 22.34% for H
2
O
2
mainly due to an enhanced open-circuit voltage. Operational stability is simultaneously improved, where 89.3% of the initial PCE is maintained after 1000 h under an ambient condition for the H
2
O
2
-derived ALD SnO
2
as compared to the control device maintaining 72.5% of the initial PCE.
Perovskite solar cell with a H
2
O
2
-derived SnO
2
film formed by atomic layer deposition (ALD) shows better stability than that with the H
2
O-derived one due to the reduced surface hydroxyl defect. |
| doi_str_mv | 10.1039/d2nr06884b |
| format | Article |
| fullrecord | <record><control><sourceid>rsc</sourceid><recordid>TN_cdi_rsc_primary_d2nr06884b</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>d2nr06884b</sourcerecordid><originalsourceid>FETCH-rsc_primary_d2nr06884b3</originalsourceid><addsrcrecordid>eNqFj0FrAjEQhUNpobb10nth_oBt3CxbPZZi8daD3iUmszo2mywz6dL8exGKHj29Bx_vg6fU81S_TrWZv_kqsm5ms3p7o0aVrvXEmPfq9tyb-l49iBy0buamMSM1fOTUkYNgCzJ47JNQphQhtbCK3_ArFHewL57TDiP0yOmPPAJ1PacBBfIeAduWHGF0BWz0INluKVAuJ8lpMcgPZQRJwTI4DEGe1F1rg-D4Px_Vy9di_bmcsLhNz9RZLpvLGXONHwET-lAJ</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Atomic layer deposition of SnO using hydrogen peroxide improves the efficiency and stability of perovskite solar cells</title><source>Royal Society Of Chemistry Journals</source><creator>Lee, Sang-Uk ; Park, Hyoungmin ; Shin, Hyunjung ; Park, Nam-Gyu</creator><creatorcontrib>Lee, Sang-Uk ; Park, Hyoungmin ; Shin, Hyunjung ; Park, Nam-Gyu</creatorcontrib><description>Low-temperature processed SnO
2
is a promising electron transporting layer in perovskite solar cells (PSCs) due to its optoelectronic advantage. Atomic layer deposition (ALD) is suitable for forming a conformal SnO
2
layer on a high-haze substrate. However, oxygen vacancy formed by the conventional ALD process using H
2
O might have a detrimental effect on the efficiency and stability of PSCs. Here, we report on the photovoltaic performance and stability of PSCs based on the ALD-SnO
2
layer with low oxygen vacancies fabricated
via
H
2
O
2
. Compared to the ALD-SnO
2
layer formed using H
2
O vapors, the ALD-SnO
2
layer prepared
via
H
2
O
2
shows better electron extraction due to a reduced oxygen vacancy associated with the highly oxidizing nature of H
2
O
2
. As a result, the power conversion efficiency (PCE) is enhanced from 21.42% for H
2
O to 22.34% for H
2
O
2
mainly due to an enhanced open-circuit voltage. Operational stability is simultaneously improved, where 89.3% of the initial PCE is maintained after 1000 h under an ambient condition for the H
2
O
2
-derived ALD SnO
2
as compared to the control device maintaining 72.5% of the initial PCE.
Perovskite solar cell with a H
2
O
2
-derived SnO
2
film formed by atomic layer deposition (ALD) shows better stability than that with the H
2
O-derived one due to the reduced surface hydroxyl defect.</description><identifier>ISSN: 2040-3364</identifier><identifier>EISSN: 2040-3372</identifier><identifier>DOI: 10.1039/d2nr06884b</identifier><ispartof>Nanoscale, 2023-03, Vol.15 (1), p.544-552</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Lee, Sang-Uk</creatorcontrib><creatorcontrib>Park, Hyoungmin</creatorcontrib><creatorcontrib>Shin, Hyunjung</creatorcontrib><creatorcontrib>Park, Nam-Gyu</creatorcontrib><title>Atomic layer deposition of SnO using hydrogen peroxide improves the efficiency and stability of perovskite solar cells</title><title>Nanoscale</title><description>Low-temperature processed SnO
2
is a promising electron transporting layer in perovskite solar cells (PSCs) due to its optoelectronic advantage. Atomic layer deposition (ALD) is suitable for forming a conformal SnO
2
layer on a high-haze substrate. However, oxygen vacancy formed by the conventional ALD process using H
2
O might have a detrimental effect on the efficiency and stability of PSCs. Here, we report on the photovoltaic performance and stability of PSCs based on the ALD-SnO
2
layer with low oxygen vacancies fabricated
via
H
2
O
2
. Compared to the ALD-SnO
2
layer formed using H
2
O vapors, the ALD-SnO
2
layer prepared
via
H
2
O
2
shows better electron extraction due to a reduced oxygen vacancy associated with the highly oxidizing nature of H
2
O
2
. As a result, the power conversion efficiency (PCE) is enhanced from 21.42% for H
2
O to 22.34% for H
2
O
2
mainly due to an enhanced open-circuit voltage. Operational stability is simultaneously improved, where 89.3% of the initial PCE is maintained after 1000 h under an ambient condition for the H
2
O
2
-derived ALD SnO
2
as compared to the control device maintaining 72.5% of the initial PCE.
Perovskite solar cell with a H
2
O
2
-derived SnO
2
film formed by atomic layer deposition (ALD) shows better stability than that with the H
2
O-derived one due to the reduced surface hydroxyl defect.</description><issn>2040-3364</issn><issn>2040-3372</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><sourceid/><recordid>eNqFj0FrAjEQhUNpobb10nth_oBt3CxbPZZi8daD3iUmszo2mywz6dL8exGKHj29Bx_vg6fU81S_TrWZv_kqsm5ms3p7o0aVrvXEmPfq9tyb-l49iBy0buamMSM1fOTUkYNgCzJ47JNQphQhtbCK3_ArFHewL57TDiP0yOmPPAJ1PacBBfIeAduWHGF0BWz0INluKVAuJ8lpMcgPZQRJwTI4DEGe1F1rg-D4Px_Vy9di_bmcsLhNz9RZLpvLGXONHwET-lAJ</recordid><startdate>20230309</startdate><enddate>20230309</enddate><creator>Lee, Sang-Uk</creator><creator>Park, Hyoungmin</creator><creator>Shin, Hyunjung</creator><creator>Park, Nam-Gyu</creator><scope/></search><sort><creationdate>20230309</creationdate><title>Atomic layer deposition of SnO using hydrogen peroxide improves the efficiency and stability of perovskite solar cells</title><author>Lee, Sang-Uk ; Park, Hyoungmin ; Shin, Hyunjung ; Park, Nam-Gyu</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-rsc_primary_d2nr06884b3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><creationdate>2023</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lee, Sang-Uk</creatorcontrib><creatorcontrib>Park, Hyoungmin</creatorcontrib><creatorcontrib>Shin, Hyunjung</creatorcontrib><creatorcontrib>Park, Nam-Gyu</creatorcontrib><jtitle>Nanoscale</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lee, Sang-Uk</au><au>Park, Hyoungmin</au><au>Shin, Hyunjung</au><au>Park, Nam-Gyu</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Atomic layer deposition of SnO using hydrogen peroxide improves the efficiency and stability of perovskite solar cells</atitle><jtitle>Nanoscale</jtitle><date>2023-03-09</date><risdate>2023</risdate><volume>15</volume><issue>1</issue><spage>544</spage><epage>552</epage><pages>544-552</pages><issn>2040-3364</issn><eissn>2040-3372</eissn><abstract>Low-temperature processed SnO
2
is a promising electron transporting layer in perovskite solar cells (PSCs) due to its optoelectronic advantage. Atomic layer deposition (ALD) is suitable for forming a conformal SnO
2
layer on a high-haze substrate. However, oxygen vacancy formed by the conventional ALD process using H
2
O might have a detrimental effect on the efficiency and stability of PSCs. Here, we report on the photovoltaic performance and stability of PSCs based on the ALD-SnO
2
layer with low oxygen vacancies fabricated
via
H
2
O
2
. Compared to the ALD-SnO
2
layer formed using H
2
O vapors, the ALD-SnO
2
layer prepared
via
H
2
O
2
shows better electron extraction due to a reduced oxygen vacancy associated with the highly oxidizing nature of H
2
O
2
. As a result, the power conversion efficiency (PCE) is enhanced from 21.42% for H
2
O to 22.34% for H
2
O
2
mainly due to an enhanced open-circuit voltage. Operational stability is simultaneously improved, where 89.3% of the initial PCE is maintained after 1000 h under an ambient condition for the H
2
O
2
-derived ALD SnO
2
as compared to the control device maintaining 72.5% of the initial PCE.
Perovskite solar cell with a H
2
O
2
-derived SnO
2
film formed by atomic layer deposition (ALD) shows better stability than that with the H
2
O-derived one due to the reduced surface hydroxyl defect.</abstract><doi>10.1039/d2nr06884b</doi><tpages>9</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 2040-3364 |
| ispartof | Nanoscale, 2023-03, Vol.15 (1), p.544-552 |
| issn | 2040-3364 2040-3372 |
| language | |
| recordid | cdi_rsc_primary_d2nr06884b |
| source | Royal Society Of Chemistry Journals |
| title | Atomic layer deposition of SnO using hydrogen peroxide improves the efficiency and stability of perovskite solar cells |
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