Band gap and electronic structure of defects in the ternary nitride BPN: experiment and theory

Recent advances in methods to access nitride systems by a high-pressure high-temperature approach have made possible the one-step synthesis of mixed ternary non-metal nitrides. As a prerequisite to use in a practical device, it is important to understand important bulk electronic properties, such as...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2022-04, Vol.1 (16), p.6429-6434
Hauptverfasser:	de Boer, Tristan, Fattah, Md. Fahim Al, Amin, Muhammad Ruhul, Ambach, Sebastian J, Vogel, Sebastian, Schnick, Wolfgang, Moewes, Alexander
Format:	Artikel
Sprache:
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!