Gate induced charge transfer and hysteresis enlargement in MoS/GeSe vertical heterostructures
Two-dimensional van der Waals heterostructures provide an amazing platform to study the fundamental physical properties and build optoelectronic devices because of their abundant band structures and clean interface. In this paper, a MoS 2 /GeSe 2 vertical heterostructure is built with type I band al...
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| Veröffentlicht in: | Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2021-07, Vol.9 (26), p.8213-8219 |
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| container_issue | 26 |
| container_start_page | 8213 |
| container_title | Journal of materials chemistry. C, Materials for optical and electronic devices |
| container_volume | 9 |
| creator | Yao, Jiadong Guo, Wenxuan Liu, Yali Niu, Xinyue Li, Mengge Wu, Xiaoxiang Yu, Ying Ou, Tianjian Sha, Jian Wang, Yewu |
| description | Two-dimensional van der Waals heterostructures provide an amazing platform to study the fundamental physical properties and build optoelectronic devices because of their abundant band structures and clean interface. In this paper, a MoS
2
/GeSe
2
vertical heterostructure is built with type I band alignment, and the hysteresis voltage reaches 94 V under the scan range of ±80 V. The large hysteresis is attributed to the charge transfer between the MoS
2
and GeSe
2
layers according to a series of investigations, which is beneficial for its application in memory devices. The understanding of the mechanism will be helpful to improve the device performance and develop other new van der Waals heterostructure devices.
We explored the hysteresis enlargement in the vertical MoS
2
/GeSe
2
van der Waals heterojunction, and it was attributed to the gate induced charge transfer process between the MoS
2
and GeSe
2
layers. |
| doi_str_mv | 10.1039/d1tc01824h |
| format | Article |
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2
/GeSe
2
vertical heterostructure is built with type I band alignment, and the hysteresis voltage reaches 94 V under the scan range of ±80 V. The large hysteresis is attributed to the charge transfer between the MoS
2
and GeSe
2
layers according to a series of investigations, which is beneficial for its application in memory devices. The understanding of the mechanism will be helpful to improve the device performance and develop other new van der Waals heterostructure devices.
We explored the hysteresis enlargement in the vertical MoS
2
/GeSe
2
van der Waals heterojunction, and it was attributed to the gate induced charge transfer process between the MoS
2
and GeSe
2
layers.</description><identifier>ISSN: 2050-7526</identifier><identifier>EISSN: 2050-7534</identifier><identifier>DOI: 10.1039/d1tc01824h</identifier><ispartof>Journal of materials chemistry. C, Materials for optical and electronic devices, 2021-07, Vol.9 (26), p.8213-8219</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Yao, Jiadong</creatorcontrib><creatorcontrib>Guo, Wenxuan</creatorcontrib><creatorcontrib>Liu, Yali</creatorcontrib><creatorcontrib>Niu, Xinyue</creatorcontrib><creatorcontrib>Li, Mengge</creatorcontrib><creatorcontrib>Wu, Xiaoxiang</creatorcontrib><creatorcontrib>Yu, Ying</creatorcontrib><creatorcontrib>Ou, Tianjian</creatorcontrib><creatorcontrib>Sha, Jian</creatorcontrib><creatorcontrib>Wang, Yewu</creatorcontrib><title>Gate induced charge transfer and hysteresis enlargement in MoS/GeSe vertical heterostructures</title><title>Journal of materials chemistry. C, Materials for optical and electronic devices</title><description>Two-dimensional van der Waals heterostructures provide an amazing platform to study the fundamental physical properties and build optoelectronic devices because of their abundant band structures and clean interface. In this paper, a MoS
2
/GeSe
2
vertical heterostructure is built with type I band alignment, and the hysteresis voltage reaches 94 V under the scan range of ±80 V. The large hysteresis is attributed to the charge transfer between the MoS
2
and GeSe
2
layers according to a series of investigations, which is beneficial for its application in memory devices. The understanding of the mechanism will be helpful to improve the device performance and develop other new van der Waals heterostructure devices.
We explored the hysteresis enlargement in the vertical MoS
2
/GeSe
2
van der Waals heterojunction, and it was attributed to the gate induced charge transfer process between the MoS
2
and GeSe
2
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2
/GeSe
2
vertical heterostructure is built with type I band alignment, and the hysteresis voltage reaches 94 V under the scan range of ±80 V. The large hysteresis is attributed to the charge transfer between the MoS
2
and GeSe
2
layers according to a series of investigations, which is beneficial for its application in memory devices. The understanding of the mechanism will be helpful to improve the device performance and develop other new van der Waals heterostructure devices.
We explored the hysteresis enlargement in the vertical MoS
2
/GeSe
2
van der Waals heterojunction, and it was attributed to the gate induced charge transfer process between the MoS
2
and GeSe
2
layers.</abstract><doi>10.1039/d1tc01824h</doi><tpages>7</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 2050-7526 |
| ispartof | Journal of materials chemistry. C, Materials for optical and electronic devices, 2021-07, Vol.9 (26), p.8213-8219 |
| issn | 2050-7526 2050-7534 |
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| recordid | cdi_rsc_primary_d1tc01824h |
| source | Royal Society Of Chemistry Journals 2008- |
| title | Gate induced charge transfer and hysteresis enlargement in MoS/GeSe vertical heterostructures |
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