Double magnetic tunnel junctions with a switchable assistance layer for improved spin transfer torque magnetic memory performance

This paper reports the first experimental demonstration of a new concept of double magnetic tunnel junctions comprising a magnetically switchable assistance layer. These double junctions are used as memory cells in spin transfer torque magnetic random access memory (STT-MRAM) devices. Their working...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Nanoscale 2021-09, Vol.13 (33), p.1496-1419
Hauptverfasser:	Sanchez Hazen, Daniel, Auffret, Stéphane, Joumard, Isabelle, Vila, Laurent, Buda-Prejbeanu, Liliana D, Sousa, Ricardo C, Prejbeanu, Lucian, Dieny, Bernard
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed Matter Electrical junctions Electrical properties Electronics Engineering Sciences Figure of merit Materials Materials Science Memory devices Micro and nanotechnologies Microelectronics Physics Random access memory Torque Tunnel junctions
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!