Doping-free bandgap tunability in FeO nanostructured films
A tunable bandgap without doping is highly desirable for applications in optoelectronic devices. Herein, we develop a new method which can tune the bandgap without any doping. In the present research, the bandgap of Fe 2 O 3 nanostructured films is simply tuned by changing the synthesis temperature....
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Veröffentlicht in: | Nanoscale advances 2021-09, Vol.3 (19), p.5581-5588 |
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container_title | Nanoscale advances |
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creator | Kadam, Sujit A Phan, Giang Thi Pham, Duy Van Patil, Ranjit A Lai, Chien-Chih Chen, Yan-Ruei Liou, Yung Ma, Yuan-Ron |
description | A tunable bandgap without doping is highly desirable for applications in optoelectronic devices. Herein, we develop a new method which can tune the bandgap without any doping. In the present research, the bandgap of Fe
2
O
3
nanostructured films is simply tuned by changing the synthesis temperature. The Fe
2
O
3
nanostructured films are synthesized on ITO/glass substrates at temperatures of 1100, 1150, 1200, and 1250 °C using the hot filament metal oxide vapor deposition (HFMOVD) and thermal oxidation techniques. The Fe
2
O
3
nanostructured films contain two mixtures of Fe
2+
and Fe
3+
cations and two trigonal (α) and cubic (γ) phases. The increase of the Fe
2+
cations and cubic (γ) phase with the elevated synthesis temperatures lifted the valence band edge, indicating a reduction in the bandgap. The linear bandgap reduction of 0.55 eV without any doping makes the Fe
2
O
3
nanostructured films promising materials for applications in bandgap engineering, optoelectronic devices, and energy storage devices.
Fe
2
O
3
nanostructured films are grown on ITO/glass substrates using the HFMOVD and thermal oxidation techniques. The increase of the Fe
2+
cations and cubic (γ) phase leads to a reduction in the bandgap of the Fe
2
O
3
nanostructured films. |
doi_str_mv | 10.1039/d1na00442e |
format | Article |
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2
O
3
nanostructured films is simply tuned by changing the synthesis temperature. The Fe
2
O
3
nanostructured films are synthesized on ITO/glass substrates at temperatures of 1100, 1150, 1200, and 1250 °C using the hot filament metal oxide vapor deposition (HFMOVD) and thermal oxidation techniques. The Fe
2
O
3
nanostructured films contain two mixtures of Fe
2+
and Fe
3+
cations and two trigonal (α) and cubic (γ) phases. The increase of the Fe
2+
cations and cubic (γ) phase with the elevated synthesis temperatures lifted the valence band edge, indicating a reduction in the bandgap. The linear bandgap reduction of 0.55 eV without any doping makes the Fe
2
O
3
nanostructured films promising materials for applications in bandgap engineering, optoelectronic devices, and energy storage devices.
Fe
2
O
3
nanostructured films are grown on ITO/glass substrates using the HFMOVD and thermal oxidation techniques. The increase of the Fe
2+
cations and cubic (γ) phase leads to a reduction in the bandgap of the Fe
2
O
3
nanostructured films.</description><identifier>EISSN: 2516-0230</identifier><identifier>DOI: 10.1039/d1na00442e</identifier><ispartof>Nanoscale advances, 2021-09, Vol.3 (19), p.5581-5588</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,864,27924,27925</link.rule.ids></links><search><creatorcontrib>Kadam, Sujit A</creatorcontrib><creatorcontrib>Phan, Giang Thi</creatorcontrib><creatorcontrib>Pham, Duy Van</creatorcontrib><creatorcontrib>Patil, Ranjit A</creatorcontrib><creatorcontrib>Lai, Chien-Chih</creatorcontrib><creatorcontrib>Chen, Yan-Ruei</creatorcontrib><creatorcontrib>Liou, Yung</creatorcontrib><creatorcontrib>Ma, Yuan-Ron</creatorcontrib><title>Doping-free bandgap tunability in FeO nanostructured films</title><title>Nanoscale advances</title><description>A tunable bandgap without doping is highly desirable for applications in optoelectronic devices. Herein, we develop a new method which can tune the bandgap without any doping. In the present research, the bandgap of Fe
2
O
3
nanostructured films is simply tuned by changing the synthesis temperature. The Fe
2
O
3
nanostructured films are synthesized on ITO/glass substrates at temperatures of 1100, 1150, 1200, and 1250 °C using the hot filament metal oxide vapor deposition (HFMOVD) and thermal oxidation techniques. The Fe
2
O
3
nanostructured films contain two mixtures of Fe
2+
and Fe
3+
cations and two trigonal (α) and cubic (γ) phases. The increase of the Fe
2+
cations and cubic (γ) phase with the elevated synthesis temperatures lifted the valence band edge, indicating a reduction in the bandgap. The linear bandgap reduction of 0.55 eV without any doping makes the Fe
2
O
3
nanostructured films promising materials for applications in bandgap engineering, optoelectronic devices, and energy storage devices.
Fe
2
O
3
nanostructured films are grown on ITO/glass substrates using the HFMOVD and thermal oxidation techniques. The increase of the Fe
2+
cations and cubic (γ) phase leads to a reduction in the bandgap of the Fe
2
O
3
nanostructured films.</description><issn>2516-0230</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><sourceid/><recordid>eNqFzrEOgjAQgOGLiYlEWdxN-gLotVQNripxc3EnBxRSAwdpy8Dbu5g4Ov3Dt_wAW4l7iWl2qCUTotbKLCBSR3lKUKW4gtj7NyIqqbU-ZxFcbsNouU0aZ4woieuWRhEmptJ2NszCssjNUzDx4IObqjA5U4vGdr3fwLKhzpv42zXs8vvr-kicr4rR2Z7cXPw-0n_-AT8mN3k</recordid><startdate>20210928</startdate><enddate>20210928</enddate><creator>Kadam, Sujit A</creator><creator>Phan, Giang Thi</creator><creator>Pham, Duy Van</creator><creator>Patil, Ranjit A</creator><creator>Lai, Chien-Chih</creator><creator>Chen, Yan-Ruei</creator><creator>Liou, Yung</creator><creator>Ma, Yuan-Ron</creator><scope/></search><sort><creationdate>20210928</creationdate><title>Doping-free bandgap tunability in FeO nanostructured films</title><author>Kadam, Sujit A ; Phan, Giang Thi ; Pham, Duy Van ; Patil, Ranjit A ; Lai, Chien-Chih ; Chen, Yan-Ruei ; Liou, Yung ; Ma, Yuan-Ron</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-rsc_primary_d1na00442e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><creationdate>2021</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kadam, Sujit A</creatorcontrib><creatorcontrib>Phan, Giang Thi</creatorcontrib><creatorcontrib>Pham, Duy Van</creatorcontrib><creatorcontrib>Patil, Ranjit A</creatorcontrib><creatorcontrib>Lai, Chien-Chih</creatorcontrib><creatorcontrib>Chen, Yan-Ruei</creatorcontrib><creatorcontrib>Liou, Yung</creatorcontrib><creatorcontrib>Ma, Yuan-Ron</creatorcontrib><jtitle>Nanoscale advances</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kadam, Sujit A</au><au>Phan, Giang Thi</au><au>Pham, Duy Van</au><au>Patil, Ranjit A</au><au>Lai, Chien-Chih</au><au>Chen, Yan-Ruei</au><au>Liou, Yung</au><au>Ma, Yuan-Ron</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Doping-free bandgap tunability in FeO nanostructured films</atitle><jtitle>Nanoscale advances</jtitle><date>2021-09-28</date><risdate>2021</risdate><volume>3</volume><issue>19</issue><spage>5581</spage><epage>5588</epage><pages>5581-5588</pages><eissn>2516-0230</eissn><abstract>A tunable bandgap without doping is highly desirable for applications in optoelectronic devices. Herein, we develop a new method which can tune the bandgap without any doping. In the present research, the bandgap of Fe
2
O
3
nanostructured films is simply tuned by changing the synthesis temperature. The Fe
2
O
3
nanostructured films are synthesized on ITO/glass substrates at temperatures of 1100, 1150, 1200, and 1250 °C using the hot filament metal oxide vapor deposition (HFMOVD) and thermal oxidation techniques. The Fe
2
O
3
nanostructured films contain two mixtures of Fe
2+
and Fe
3+
cations and two trigonal (α) and cubic (γ) phases. The increase of the Fe
2+
cations and cubic (γ) phase with the elevated synthesis temperatures lifted the valence band edge, indicating a reduction in the bandgap. The linear bandgap reduction of 0.55 eV without any doping makes the Fe
2
O
3
nanostructured films promising materials for applications in bandgap engineering, optoelectronic devices, and energy storage devices.
Fe
2
O
3
nanostructured films are grown on ITO/glass substrates using the HFMOVD and thermal oxidation techniques. The increase of the Fe
2+
cations and cubic (γ) phase leads to a reduction in the bandgap of the Fe
2
O
3
nanostructured films.</abstract><doi>10.1039/d1na00442e</doi><tpages>8</tpages></addata></record> |
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source | DOAJ Directory of Open Access Journals; EZB-FREE-00999 freely available EZB journals; PubMed Central |
title | Doping-free bandgap tunability in FeO nanostructured films |
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