Electrical control of the valley degree of freedom in 2D ferroelectric/antiferromagnetic heterostructures

Valley, the energy extrema in the electronic band structure, is regarded as a new degree of freedom of electrons, in addition to charge and spin. Valleytronics focuses on the valley degree of freedom and has attracted considerable attention due to its potential applications in information storage. I...

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Veröffentlicht in:	Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2020-06, Vol.8 (24), p.898-816
Hauptverfasser:	Hu, He, Tong, Wen-Yi, Shen, Yu-Hao, Duan, Chun-Gang
Format:	Artikel
Sprache:	eng
Schlagworte:	Antiferromagnetism Data storage Degrees of freedom Ferroelectric materials Ferroelectricity Heterostructures Information storage Memory devices Polarization Proximity effect (electricity) Stability Substrates Two dimensional materials
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