Achieving ultrahigh energy storage performance in bismuth magnesium titanate film capacitors amorphous-structure engineering
Pure perovskite Bi(Mg 0.5 Ti x )O 3 (abbreviated as BMT x ) thin films are successfully fabricated on Pt/Ti/SiO 2 /Si substrates by a sol-gel method, where the excess TiO 2 with an amorphous structure is designed to improve the energy storage performance. The dielectric breakdown strength is found t...
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| Veröffentlicht in: | Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2019-11, Vol.7 (43), p.13632-13639 |
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| container_issue | 43 |
| container_start_page | 13632 |
| container_title | Journal of materials chemistry. C, Materials for optical and electronic devices |
| container_volume | 7 |
| creator | Xie, Juan Liu, Hanxing Yao, Zhonghua Hao, Hua Xie, Yanjiang Li, Zongxin Cao, Minghe Zhang, Shujun |
| description | Pure perovskite Bi(Mg
0.5
Ti
x
)O
3
(abbreviated as BMT
x
) thin films are successfully fabricated on Pt/Ti/SiO
2
/Si substrates by a sol-gel method, where the excess TiO
2
with an amorphous structure is designed to improve the energy storage performance. The dielectric breakdown strength is found to be abruptly improved for the sample with
x
≥ 0.65 due to the synergistic contributions from the fine grain size and amorphous phase structure, which greatly decreases the leakage current. Of particular significance is that BMT
x
with
x
= 0.75 exhibits a super high recoverable energy storage density of 126 J cm
−3
at 5000 kV cm
−1
, demonstrating the great potential of environmentally friendly BMT
x
thin films for energy storage capacitor applications.
Amorphous engineering can effectively tailor energy storage performances of dielectrics due to the improvement of dielectric breakdown. |
| doi_str_mv | 10.1039/c9tc04121d |
| format | Article |
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0.5
Ti
x
)O
3
(abbreviated as BMT
x
) thin films are successfully fabricated on Pt/Ti/SiO
2
/Si substrates by a sol-gel method, where the excess TiO
2
with an amorphous structure is designed to improve the energy storage performance. The dielectric breakdown strength is found to be abruptly improved for the sample with
x
≥ 0.65 due to the synergistic contributions from the fine grain size and amorphous phase structure, which greatly decreases the leakage current. Of particular significance is that BMT
x
with
x
= 0.75 exhibits a super high recoverable energy storage density of 126 J cm
−3
at 5000 kV cm
−1
, demonstrating the great potential of environmentally friendly BMT
x
thin films for energy storage capacitor applications.
Amorphous engineering can effectively tailor energy storage performances of dielectrics due to the improvement of dielectric breakdown.</description><identifier>ISSN: 2050-7526</identifier><identifier>EISSN: 2050-7534</identifier><identifier>DOI: 10.1039/c9tc04121d</identifier><ispartof>Journal of materials chemistry. C, Materials for optical and electronic devices, 2019-11, Vol.7 (43), p.13632-13639</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27903,27904</link.rule.ids></links><search><creatorcontrib>Xie, Juan</creatorcontrib><creatorcontrib>Liu, Hanxing</creatorcontrib><creatorcontrib>Yao, Zhonghua</creatorcontrib><creatorcontrib>Hao, Hua</creatorcontrib><creatorcontrib>Xie, Yanjiang</creatorcontrib><creatorcontrib>Li, Zongxin</creatorcontrib><creatorcontrib>Cao, Minghe</creatorcontrib><creatorcontrib>Zhang, Shujun</creatorcontrib><title>Achieving ultrahigh energy storage performance in bismuth magnesium titanate film capacitors amorphous-structure engineering</title><title>Journal of materials chemistry. C, Materials for optical and electronic devices</title><description>Pure perovskite Bi(Mg
0.5
Ti
x
)O
3
(abbreviated as BMT
x
) thin films are successfully fabricated on Pt/Ti/SiO
2
/Si substrates by a sol-gel method, where the excess TiO
2
with an amorphous structure is designed to improve the energy storage performance. The dielectric breakdown strength is found to be abruptly improved for the sample with
x
≥ 0.65 due to the synergistic contributions from the fine grain size and amorphous phase structure, which greatly decreases the leakage current. Of particular significance is that BMT
x
with
x
= 0.75 exhibits a super high recoverable energy storage density of 126 J cm
−3
at 5000 kV cm
−1
, demonstrating the great potential of environmentally friendly BMT
x
thin films for energy storage capacitor applications.
Amorphous engineering can effectively tailor energy storage performances of dielectrics due to the improvement of dielectric breakdown.</description><issn>2050-7526</issn><issn>2050-7534</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><sourceid/><recordid>eNqFT8FKw0AUXMSCRXvxLrwfiO4mbWyOIoof4L28ri-bV7Kb8N6uUPDjzUH06FxmYJgZxphbZ--dbboH32Vvt652HxdmXdudrR53zfbyV9ftldmonuyCvWv3bbc2X09-YPrkFKCMWXDgMAAlknAGzZNgIJhJ-kkiJk_ACY6sseQBIoZEyiVC5owJM0HPYwSPM3pesgoYJ5mHqWilWYrPRWgpD5yIZJm8MaseR6XND1-bu9eX9-e3StQfZuGIcj78vWr-878BYyNUBQ</recordid><startdate>20191107</startdate><enddate>20191107</enddate><creator>Xie, Juan</creator><creator>Liu, Hanxing</creator><creator>Yao, Zhonghua</creator><creator>Hao, Hua</creator><creator>Xie, Yanjiang</creator><creator>Li, Zongxin</creator><creator>Cao, Minghe</creator><creator>Zhang, Shujun</creator><scope/></search><sort><creationdate>20191107</creationdate><title>Achieving ultrahigh energy storage performance in bismuth magnesium titanate film capacitors amorphous-structure engineering</title><author>Xie, Juan ; Liu, Hanxing ; Yao, Zhonghua ; Hao, Hua ; Xie, Yanjiang ; Li, Zongxin ; Cao, Minghe ; Zhang, Shujun</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-rsc_primary_c9tc04121d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><creationdate>2019</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Xie, Juan</creatorcontrib><creatorcontrib>Liu, Hanxing</creatorcontrib><creatorcontrib>Yao, Zhonghua</creatorcontrib><creatorcontrib>Hao, Hua</creatorcontrib><creatorcontrib>Xie, Yanjiang</creatorcontrib><creatorcontrib>Li, Zongxin</creatorcontrib><creatorcontrib>Cao, Minghe</creatorcontrib><creatorcontrib>Zhang, Shujun</creatorcontrib><jtitle>Journal of materials chemistry. C, Materials for optical and electronic devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Xie, Juan</au><au>Liu, Hanxing</au><au>Yao, Zhonghua</au><au>Hao, Hua</au><au>Xie, Yanjiang</au><au>Li, Zongxin</au><au>Cao, Minghe</au><au>Zhang, Shujun</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Achieving ultrahigh energy storage performance in bismuth magnesium titanate film capacitors amorphous-structure engineering</atitle><jtitle>Journal of materials chemistry. C, Materials for optical and electronic devices</jtitle><date>2019-11-07</date><risdate>2019</risdate><volume>7</volume><issue>43</issue><spage>13632</spage><epage>13639</epage><pages>13632-13639</pages><issn>2050-7526</issn><eissn>2050-7534</eissn><abstract>Pure perovskite Bi(Mg
0.5
Ti
x
)O
3
(abbreviated as BMT
x
) thin films are successfully fabricated on Pt/Ti/SiO
2
/Si substrates by a sol-gel method, where the excess TiO
2
with an amorphous structure is designed to improve the energy storage performance. The dielectric breakdown strength is found to be abruptly improved for the sample with
x
≥ 0.65 due to the synergistic contributions from the fine grain size and amorphous phase structure, which greatly decreases the leakage current. Of particular significance is that BMT
x
with
x
= 0.75 exhibits a super high recoverable energy storage density of 126 J cm
−3
at 5000 kV cm
−1
, demonstrating the great potential of environmentally friendly BMT
x
thin films for energy storage capacitor applications.
Amorphous engineering can effectively tailor energy storage performances of dielectrics due to the improvement of dielectric breakdown.</abstract><doi>10.1039/c9tc04121d</doi><tpages>8</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 2050-7526 |
| ispartof | Journal of materials chemistry. C, Materials for optical and electronic devices, 2019-11, Vol.7 (43), p.13632-13639 |
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| source | Royal Society Of Chemistry Journals 2008- |
| title | Achieving ultrahigh energy storage performance in bismuth magnesium titanate film capacitors amorphous-structure engineering |
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