Low thermal conductivity and promising thermoelectric performance in ACoSb (A = V, Nb or Ta) half-Heuslers with inherent vacancies

Half-Heuslers with vacancies that are stabilised by a semiconducting electron count offer new opportunities for discovering good thermoelectric performance. Here, we present a comparative study of A x CoSb half-Heuslers (A = V, Nb or Ta) with intrinsic vacancies. Structural analysis reveals an incre...

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Veröffentlicht in:	Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2019-06, Vol.7 (22), p.6539-6547
Hauptverfasser:	Ferluccio, Daniella A, Halpin, John E, MacIntosh, Kathryn L, Quinn, Robert J, Don, Eric, Smith, Ronald I, MacLaren, Donald A, Bos, Jan-Willem G
Format:	Artikel
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