Probing ballistic thermal conduction in segmented silicon nanowires
Ballistic heat conduction in semiconductors is a remarkable but controversial nanoscale phenomenon, which implies that nanostructures can conduct thermal energy without dissipation. Here, we experimentally probed ballistic thermal transport at distances of 400-800 nm and temperatures of 4-250 K. Mea...
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| Veröffentlicht in: | Nanoscale 2019-07, Vol.11 (28), p.1347-13414 |
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| container_title | Nanoscale |
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| creator | Anufriev, Roman Gluchko, Sergei Volz, Sebastian Nomura, Masahiro |
| description | Ballistic heat conduction in semiconductors is a remarkable but controversial nanoscale phenomenon, which implies that nanostructures can conduct thermal energy without dissipation. Here, we experimentally probed ballistic thermal transport at distances of 400-800 nm and temperatures of 4-250 K. Measuring thermal properties of straight and serpentine silicon nanowires, we found that at 4 K heat conduction is quasi-ballistic with stronger ballisticity at shorter length scales. As we increased the temperature, quasi-ballistic heat conduction weakened and gradually turned into diffusive regime at temperatures above 150 K. Our Monte Carlo simulations illustrate how this transition is driven by different scattering processes and linked to the surface roughness and the temperature. These results demonstrate the length and temperature limits of quasi-ballistic heat conduction in silicon nanostructures, knowledge of which is essential for thermal management in microelectronics.
We experimentally demonstrate length and temperature limits of ballistic thermal conduction in silicon nanowires. |
| doi_str_mv | 10.1039/c9nr03863a |
| format | Article |
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We experimentally demonstrate length and temperature limits of ballistic thermal conduction in silicon nanowires.</description><subject>Computer simulation</subject><subject>Conduction heating</subject><subject>Conductive heat transfer</subject><subject>Heat</subject><subject>Nanostructure</subject><subject>Nanowires</subject><subject>Serpentine</subject><subject>Silicon</subject><subject>Surface roughness</subject><subject>Temperature</subject><subject>Thermal energy</subject><subject>Thermal management</subject><subject>Thermodynamic properties</subject><issn>2040-3364</issn><issn>2040-3372</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><recordid>eNp90M1LwzAYBvAgipvTi3el4k2o5qtpchzFLxgqsntIk3RmtOlMWsT_3mrnvHl6X3h_PC88AJwieI0gETda-AAJZ0TtgSmGFKaE5Hh_tzM6AUcxriFkgjByCCYE4ZwhiqageAlt6fwqKVVdu9g5nXRvNjSqTnTrTa871_rE-STaVWN9Z00SXe2GW-KVbz9csPEYHFSqjvZkO2dgeXe7LB7SxfP9YzFfpJpi0aUZUUJlCDMLLcYMQU6Y5UgLknGjRZXBMhfGGMS1pqQSGjJbGaVLizSnnMzA5Ri7Ce17b2Mn120f_PBRYpwJnOUZo4O6GpUObYzBVnITXKPCp0RQftclC_H0-lPXfMDn28i-bKzZ0d9-BnAxghD17vrXt9yYajBn_xnyBaGUesY</recordid><startdate>20190728</startdate><enddate>20190728</enddate><creator>Anufriev, Roman</creator><creator>Gluchko, Sergei</creator><creator>Volz, Sebastian</creator><creator>Nomura, Masahiro</creator><general>Royal Society of Chemistry</general><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>F28</scope><scope>FR3</scope><scope>JG9</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0003-2069-9480</orcidid><orcidid>https://orcid.org/0000-0003-3706-4836</orcidid><orcidid>https://orcid.org/0000-0003-1224-0282</orcidid><orcidid>https://orcid.org/0000-0003-2001-1033</orcidid></search><sort><creationdate>20190728</creationdate><title>Probing ballistic thermal conduction in segmented silicon nanowires</title><author>Anufriev, Roman ; Gluchko, Sergei ; Volz, Sebastian ; Nomura, Masahiro</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c429t-53a9a5126e0e22610836e81c9358dc9f50b79ddd18cc43f9c06efdacbe1c8483</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><topic>Computer simulation</topic><topic>Conduction heating</topic><topic>Conductive heat transfer</topic><topic>Heat</topic><topic>Nanostructure</topic><topic>Nanowires</topic><topic>Serpentine</topic><topic>Silicon</topic><topic>Surface roughness</topic><topic>Temperature</topic><topic>Thermal energy</topic><topic>Thermal management</topic><topic>Thermodynamic properties</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Anufriev, Roman</creatorcontrib><creatorcontrib>Gluchko, Sergei</creatorcontrib><creatorcontrib>Volz, Sebastian</creatorcontrib><creatorcontrib>Nomura, Masahiro</creatorcontrib><collection>PubMed</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Nanoscale</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Anufriev, Roman</au><au>Gluchko, Sergei</au><au>Volz, Sebastian</au><au>Nomura, Masahiro</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Probing ballistic thermal conduction in segmented silicon nanowires</atitle><jtitle>Nanoscale</jtitle><addtitle>Nanoscale</addtitle><date>2019-07-28</date><risdate>2019</risdate><volume>11</volume><issue>28</issue><spage>1347</spage><epage>13414</epage><pages>1347-13414</pages><issn>2040-3364</issn><eissn>2040-3372</eissn><abstract>Ballistic heat conduction in semiconductors is a remarkable but controversial nanoscale phenomenon, which implies that nanostructures can conduct thermal energy without dissipation. Here, we experimentally probed ballistic thermal transport at distances of 400-800 nm and temperatures of 4-250 K. Measuring thermal properties of straight and serpentine silicon nanowires, we found that at 4 K heat conduction is quasi-ballistic with stronger ballisticity at shorter length scales. As we increased the temperature, quasi-ballistic heat conduction weakened and gradually turned into diffusive regime at temperatures above 150 K. Our Monte Carlo simulations illustrate how this transition is driven by different scattering processes and linked to the surface roughness and the temperature. These results demonstrate the length and temperature limits of quasi-ballistic heat conduction in silicon nanostructures, knowledge of which is essential for thermal management in microelectronics.
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| ispartof | Nanoscale, 2019-07, Vol.11 (28), p.1347-13414 |
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| language | eng |
| recordid | cdi_rsc_primary_c9nr03863a |
| source | Royal Society Of Chemistry Journals 2008- |
| subjects | Computer simulation Conduction heating Conductive heat transfer Heat Nanostructure Nanowires Serpentine Silicon Surface roughness Temperature Thermal energy Thermal management Thermodynamic properties |
| title | Probing ballistic thermal conduction in segmented silicon nanowires |
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