Structural origin of the high-performance light-emitting InGaN/AlGaN quantum disksElectronic supplementary information (ESI) available. See DOI: 10.1039/c9nr01262a

Ternary III-nitride-based nanowires with highly efficient light-emitting properties are essential for a broad range of applications. By using the selective area molecular-beam epitaxy method, InGaN/AlGaN quantum disks (QDs) embedded in hexagonal GaN nanowires were successfully grown. With the help o...

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Hauptverfasser:	Cheng, Shaobo, Langelier, Brian, Ra, Yong-Ho, Rashid, Roksana Tonny, Mi, Zetian, Botton, Gianluigi A
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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