High-performance lead-free two-dimensional perovskite photo transistors assisted by ferroelectric dielectrics
The purpose of this research was to understand the effect of a built-in ferroelectric field on the performance of two-dimensional (2D) lead-free perovskite material-based phototransistor applications. In this work, ferroelectric polymer poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) and t...
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| Veröffentlicht in: | Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2018, Vol.6 (46), p.12714-1272 |
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| creator | Wang, Haoliang Chen, Yan Lim, Engliang Wang, Xudong Yuan, Sijian Zhang, Xin Lu, Haizhou Wang, Jiao Wu, Guangjian Lin, Tie Sun, Shuo Wang, Jianlu Zhan, Yiqiang Shen, Hong Meng, Xiangjian Chu, Junhao |
| description | The purpose of this research was to understand the effect of a built-in ferroelectric field on the performance of two-dimensional (2D) lead-free perovskite material-based phototransistor applications. In this work, ferroelectric polymer poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) and two-dimensional (2D) lead-free perovskite ((C
6
H
5
C
2
H
4
NH
3
)
2
SnI
4
) were utilized as a dielectric layer and a channel layer, respectively. We observed that large hysteresis was successfully eliminated in the transfer curve, as well as the subthreshold swing being significantly reduced by one order of magnitude after P(VDF-TrFE) was introduced as a dielectric layer. Under polarization "up" and "down" states, the device achieved a high photo-switching on/off ratio (>100) and a short photoresponse time (50 ms), respectively. In addition to that, the device also demonstrated a high responsivity of 14.57 A W
−1
and a high detectivity of 1.74 × 10
12
Jones under the polarization "up" state with an illumination intensity of 21 μW cm
−2
. In addition, low temperature solution-processed P(VDF-TrFE) and (C
6
H
5
C
2
H
4
NH
3
)
2
SnI
4
(except for the contacts of Au electrodes) in this work are considered to be suitable and compatible for flexible-based phototransistor applications in the future.
With the assistance of a ferroelectric field created by a ferroelectric polymer, the performance of perovskite photo transistors is significantly improved. |
| doi_str_mv | 10.1039/c8tc04691c |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_rsc_p</sourceid><recordid>TN_cdi_rsc_primary_c8tc04691c</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2139114486</sourcerecordid><originalsourceid>FETCH-LOGICAL-c318t-5eac2a755fc0c54b9538f2f07d6c7bb5a289f9e8f9d1e07e894fd1ebe32ee8563</originalsourceid><addsrcrecordid>eNpFkMFLwzAUh4MoOOYu3oWAN6GaNE2bHKWoEwZe5rmk6YvrbJf6kin77-2cznd5H_w-HrwfIZec3XIm9J1V0bIs19yekEnKJEsKKbLTI6f5OZmFsGbjKJ6rXE9IP2_fVskA6Dz2ZmOBdmCaxCEAjV8-adoeNqH1G9PR0fKf4b2NQIeVj55GNGMWosdATdgTNLTeUQeIHjqwEVtLm_YPwwU5c6YLMPvdU_L6-LAs58ni5em5vF8kVnAVEwnGpqaQ0llmZVZrKZRLHSua3BZ1LU2qtNOgnG44sAKUztxINYgUQMlcTMn14e6A_mMLIVZrv8Xxh1ClXGjOs0ztrZuDZdGHgOCqAdve4K7irNo3WpVqWf40Wo7y1UHGYI_ef-PiG4U2ddA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2139114486</pqid></control><display><type>article</type><title>High-performance lead-free two-dimensional perovskite photo transistors assisted by ferroelectric dielectrics</title><source>Royal Society Of Chemistry Journals 2008-</source><creator>Wang, Haoliang ; Chen, Yan ; Lim, Engliang ; Wang, Xudong ; Yuan, Sijian ; Zhang, Xin ; Lu, Haizhou ; Wang, Jiao ; Wu, Guangjian ; Lin, Tie ; Sun, Shuo ; Wang, Jianlu ; Zhan, Yiqiang ; Shen, Hong ; Meng, Xiangjian ; Chu, Junhao</creator><creatorcontrib>Wang, Haoliang ; Chen, Yan ; Lim, Engliang ; Wang, Xudong ; Yuan, Sijian ; Zhang, Xin ; Lu, Haizhou ; Wang, Jiao ; Wu, Guangjian ; Lin, Tie ; Sun, Shuo ; Wang, Jianlu ; Zhan, Yiqiang ; Shen, Hong ; Meng, Xiangjian ; Chu, Junhao</creatorcontrib><description>The purpose of this research was to understand the effect of a built-in ferroelectric field on the performance of two-dimensional (2D) lead-free perovskite material-based phototransistor applications. In this work, ferroelectric polymer poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) and two-dimensional (2D) lead-free perovskite ((C
6
H
5
C
2
H
4
NH
3
)
2
SnI
4
) were utilized as a dielectric layer and a channel layer, respectively. We observed that large hysteresis was successfully eliminated in the transfer curve, as well as the subthreshold swing being significantly reduced by one order of magnitude after P(VDF-TrFE) was introduced as a dielectric layer. Under polarization "up" and "down" states, the device achieved a high photo-switching on/off ratio (>100) and a short photoresponse time (50 ms), respectively. In addition to that, the device also demonstrated a high responsivity of 14.57 A W
−1
and a high detectivity of 1.74 × 10
12
Jones under the polarization "up" state with an illumination intensity of 21 μW cm
−2
. In addition, low temperature solution-processed P(VDF-TrFE) and (C
6
H
5
C
2
H
4
NH
3
)
2
SnI
4
(except for the contacts of Au electrodes) in this work are considered to be suitable and compatible for flexible-based phototransistor applications in the future.
With the assistance of a ferroelectric field created by a ferroelectric polymer, the performance of perovskite photo transistors is significantly improved.</description><identifier>ISSN: 2050-7526</identifier><identifier>EISSN: 2050-7534</identifier><identifier>DOI: 10.1039/c8tc04691c</identifier><language>eng</language><publisher>Cambridge: Royal Society of Chemistry</publisher><subject>Dielectrics ; Ferroelectric materials ; Ferroelectricity ; Lead free ; Perovskites ; Polarization ; Semiconductor devices ; Transistors ; Vinylidene ; Vinylidene fluoride</subject><ispartof>Journal of materials chemistry. C, Materials for optical and electronic devices, 2018, Vol.6 (46), p.12714-1272</ispartof><rights>Copyright Royal Society of Chemistry 2018</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c318t-5eac2a755fc0c54b9538f2f07d6c7bb5a289f9e8f9d1e07e894fd1ebe32ee8563</citedby><cites>FETCH-LOGICAL-c318t-5eac2a755fc0c54b9538f2f07d6c7bb5a289f9e8f9d1e07e894fd1ebe32ee8563</cites><orcidid>0000-0002-5515-2250 ; 0000-0002-2228-3633 ; 0000-0001-9692-7860 ; 0000-0002-2690-9496 ; 0000-0001-6283-6506 ; 0000-0001-7640-3947</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,4024,27923,27924,27925</link.rule.ids></links><search><creatorcontrib>Wang, Haoliang</creatorcontrib><creatorcontrib>Chen, Yan</creatorcontrib><creatorcontrib>Lim, Engliang</creatorcontrib><creatorcontrib>Wang, Xudong</creatorcontrib><creatorcontrib>Yuan, Sijian</creatorcontrib><creatorcontrib>Zhang, Xin</creatorcontrib><creatorcontrib>Lu, Haizhou</creatorcontrib><creatorcontrib>Wang, Jiao</creatorcontrib><creatorcontrib>Wu, Guangjian</creatorcontrib><creatorcontrib>Lin, Tie</creatorcontrib><creatorcontrib>Sun, Shuo</creatorcontrib><creatorcontrib>Wang, Jianlu</creatorcontrib><creatorcontrib>Zhan, Yiqiang</creatorcontrib><creatorcontrib>Shen, Hong</creatorcontrib><creatorcontrib>Meng, Xiangjian</creatorcontrib><creatorcontrib>Chu, Junhao</creatorcontrib><title>High-performance lead-free two-dimensional perovskite photo transistors assisted by ferroelectric dielectrics</title><title>Journal of materials chemistry. C, Materials for optical and electronic devices</title><description>The purpose of this research was to understand the effect of a built-in ferroelectric field on the performance of two-dimensional (2D) lead-free perovskite material-based phototransistor applications. In this work, ferroelectric polymer poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) and two-dimensional (2D) lead-free perovskite ((C
6
H
5
C
2
H
4
NH
3
)
2
SnI
4
) were utilized as a dielectric layer and a channel layer, respectively. We observed that large hysteresis was successfully eliminated in the transfer curve, as well as the subthreshold swing being significantly reduced by one order of magnitude after P(VDF-TrFE) was introduced as a dielectric layer. Under polarization "up" and "down" states, the device achieved a high photo-switching on/off ratio (>100) and a short photoresponse time (50 ms), respectively. In addition to that, the device also demonstrated a high responsivity of 14.57 A W
−1
and a high detectivity of 1.74 × 10
12
Jones under the polarization "up" state with an illumination intensity of 21 μW cm
−2
. In addition, low temperature solution-processed P(VDF-TrFE) and (C
6
H
5
C
2
H
4
NH
3
)
2
SnI
4
(except for the contacts of Au electrodes) in this work are considered to be suitable and compatible for flexible-based phototransistor applications in the future.
With the assistance of a ferroelectric field created by a ferroelectric polymer, the performance of perovskite photo transistors is significantly improved.</description><subject>Dielectrics</subject><subject>Ferroelectric materials</subject><subject>Ferroelectricity</subject><subject>Lead free</subject><subject>Perovskites</subject><subject>Polarization</subject><subject>Semiconductor devices</subject><subject>Transistors</subject><subject>Vinylidene</subject><subject>Vinylidene fluoride</subject><issn>2050-7526</issn><issn>2050-7534</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><recordid>eNpFkMFLwzAUh4MoOOYu3oWAN6GaNE2bHKWoEwZe5rmk6YvrbJf6kin77-2cznd5H_w-HrwfIZec3XIm9J1V0bIs19yekEnKJEsKKbLTI6f5OZmFsGbjKJ6rXE9IP2_fVskA6Dz2ZmOBdmCaxCEAjV8-adoeNqH1G9PR0fKf4b2NQIeVj55GNGMWosdATdgTNLTeUQeIHjqwEVtLm_YPwwU5c6YLMPvdU_L6-LAs58ni5em5vF8kVnAVEwnGpqaQ0llmZVZrKZRLHSua3BZ1LU2qtNOgnG44sAKUztxINYgUQMlcTMn14e6A_mMLIVZrv8Xxh1ClXGjOs0ztrZuDZdGHgOCqAdve4K7irNo3WpVqWf40Wo7y1UHGYI_ef-PiG4U2ddA</recordid><startdate>2018</startdate><enddate>2018</enddate><creator>Wang, Haoliang</creator><creator>Chen, Yan</creator><creator>Lim, Engliang</creator><creator>Wang, Xudong</creator><creator>Yuan, Sijian</creator><creator>Zhang, Xin</creator><creator>Lu, Haizhou</creator><creator>Wang, Jiao</creator><creator>Wu, Guangjian</creator><creator>Lin, Tie</creator><creator>Sun, Shuo</creator><creator>Wang, Jianlu</creator><creator>Zhan, Yiqiang</creator><creator>Shen, Hong</creator><creator>Meng, Xiangjian</creator><creator>Chu, Junhao</creator><general>Royal Society of Chemistry</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-5515-2250</orcidid><orcidid>https://orcid.org/0000-0002-2228-3633</orcidid><orcidid>https://orcid.org/0000-0001-9692-7860</orcidid><orcidid>https://orcid.org/0000-0002-2690-9496</orcidid><orcidid>https://orcid.org/0000-0001-6283-6506</orcidid><orcidid>https://orcid.org/0000-0001-7640-3947</orcidid></search><sort><creationdate>2018</creationdate><title>High-performance lead-free two-dimensional perovskite photo transistors assisted by ferroelectric dielectrics</title><author>Wang, Haoliang ; Chen, Yan ; Lim, Engliang ; Wang, Xudong ; Yuan, Sijian ; Zhang, Xin ; Lu, Haizhou ; Wang, Jiao ; Wu, Guangjian ; Lin, Tie ; Sun, Shuo ; Wang, Jianlu ; Zhan, Yiqiang ; Shen, Hong ; Meng, Xiangjian ; Chu, Junhao</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c318t-5eac2a755fc0c54b9538f2f07d6c7bb5a289f9e8f9d1e07e894fd1ebe32ee8563</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2018</creationdate><topic>Dielectrics</topic><topic>Ferroelectric materials</topic><topic>Ferroelectricity</topic><topic>Lead free</topic><topic>Perovskites</topic><topic>Polarization</topic><topic>Semiconductor devices</topic><topic>Transistors</topic><topic>Vinylidene</topic><topic>Vinylidene fluoride</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Wang, Haoliang</creatorcontrib><creatorcontrib>Chen, Yan</creatorcontrib><creatorcontrib>Lim, Engliang</creatorcontrib><creatorcontrib>Wang, Xudong</creatorcontrib><creatorcontrib>Yuan, Sijian</creatorcontrib><creatorcontrib>Zhang, Xin</creatorcontrib><creatorcontrib>Lu, Haizhou</creatorcontrib><creatorcontrib>Wang, Jiao</creatorcontrib><creatorcontrib>Wu, Guangjian</creatorcontrib><creatorcontrib>Lin, Tie</creatorcontrib><creatorcontrib>Sun, Shuo</creatorcontrib><creatorcontrib>Wang, Jianlu</creatorcontrib><creatorcontrib>Zhan, Yiqiang</creatorcontrib><creatorcontrib>Shen, Hong</creatorcontrib><creatorcontrib>Meng, Xiangjian</creatorcontrib><creatorcontrib>Chu, Junhao</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of materials chemistry. C, Materials for optical and electronic devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Wang, Haoliang</au><au>Chen, Yan</au><au>Lim, Engliang</au><au>Wang, Xudong</au><au>Yuan, Sijian</au><au>Zhang, Xin</au><au>Lu, Haizhou</au><au>Wang, Jiao</au><au>Wu, Guangjian</au><au>Lin, Tie</au><au>Sun, Shuo</au><au>Wang, Jianlu</au><au>Zhan, Yiqiang</au><au>Shen, Hong</au><au>Meng, Xiangjian</au><au>Chu, Junhao</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High-performance lead-free two-dimensional perovskite photo transistors assisted by ferroelectric dielectrics</atitle><jtitle>Journal of materials chemistry. C, Materials for optical and electronic devices</jtitle><date>2018</date><risdate>2018</risdate><volume>6</volume><issue>46</issue><spage>12714</spage><epage>1272</epage><pages>12714-1272</pages><issn>2050-7526</issn><eissn>2050-7534</eissn><abstract>The purpose of this research was to understand the effect of a built-in ferroelectric field on the performance of two-dimensional (2D) lead-free perovskite material-based phototransistor applications. In this work, ferroelectric polymer poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) and two-dimensional (2D) lead-free perovskite ((C
6
H
5
C
2
H
4
NH
3
)
2
SnI
4
) were utilized as a dielectric layer and a channel layer, respectively. We observed that large hysteresis was successfully eliminated in the transfer curve, as well as the subthreshold swing being significantly reduced by one order of magnitude after P(VDF-TrFE) was introduced as a dielectric layer. Under polarization "up" and "down" states, the device achieved a high photo-switching on/off ratio (>100) and a short photoresponse time (50 ms), respectively. In addition to that, the device also demonstrated a high responsivity of 14.57 A W
−1
and a high detectivity of 1.74 × 10
12
Jones under the polarization "up" state with an illumination intensity of 21 μW cm
−2
. In addition, low temperature solution-processed P(VDF-TrFE) and (C
6
H
5
C
2
H
4
NH
3
)
2
SnI
4
(except for the contacts of Au electrodes) in this work are considered to be suitable and compatible for flexible-based phototransistor applications in the future.
With the assistance of a ferroelectric field created by a ferroelectric polymer, the performance of perovskite photo transistors is significantly improved.</abstract><cop>Cambridge</cop><pub>Royal Society of Chemistry</pub><doi>10.1039/c8tc04691c</doi><tpages>7</tpages><orcidid>https://orcid.org/0000-0002-5515-2250</orcidid><orcidid>https://orcid.org/0000-0002-2228-3633</orcidid><orcidid>https://orcid.org/0000-0001-9692-7860</orcidid><orcidid>https://orcid.org/0000-0002-2690-9496</orcidid><orcidid>https://orcid.org/0000-0001-6283-6506</orcidid><orcidid>https://orcid.org/0000-0001-7640-3947</orcidid></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 2050-7526 |
| ispartof | Journal of materials chemistry. C, Materials for optical and electronic devices, 2018, Vol.6 (46), p.12714-1272 |
| issn | 2050-7526 2050-7534 |
| language | eng |
| recordid | cdi_rsc_primary_c8tc04691c |
| source | Royal Society Of Chemistry Journals 2008- |
| subjects | Dielectrics Ferroelectric materials Ferroelectricity Lead free Perovskites Polarization Semiconductor devices Transistors Vinylidene Vinylidene fluoride |
| title | High-performance lead-free two-dimensional perovskite photo transistors assisted by ferroelectric dielectrics |
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