High-performance vertical GaN-based near-ultraviolet light-emitting diodes on Si substrates

High-performance vertical GaN-based near-ultraviolet (UV) light-emitting diodes (LEDs) on Si substrates with an electroluminescence emission wavelength of 395 nm have been fabricated by designing epitaxial structures to reduce the dislocation density and enhance the electron confinement and hole inj...

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Veröffentlicht in:	Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2018, Vol.6 (42), p.11255-1126
Hauptverfasser:	Li, Yuan, Wang, Wenliang, Huang, Liegen, Zheng, Yulin, Li, Xiaochan, Tang, Xin, Xie, Wentong, Chen, Xiaofen, Li, Guoqiang
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum gallium nitrides Confinement Dislocation density Electroluminescence Electrons Epitaxial growth Gallium nitrides Interlayers Light emitting diodes Near ultraviolet radiation Organic light emitting diodes Silicon substrates Superlattices Ultraviolet radiation
Online-Zugang:	Volltext
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