Hydrogen radical enhanced atomic layer deposition of TaOx: saturation studies and methods for oxygen deficiency controlElectronic supplementary information (ESI) available. See DOI: 10.1039/c8tc00679b

The growth per cycle saturation behaviors depending on the precursor pulse duration, reactant pulse duration, and reactant concentration were examined for hydrogen radical enhanced atomic layer deposition (REALD) of TaO x using tantalum-ethoxide as the precursor and plasma-activated hydrogen as the...

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Hauptverfasser:	Egorov, Konstantin V, Kuzmichev, Dmitry S, Sigarev, Andrey A, Myakota, Denis I, Zarubin, Sergey S, Chizov, Pavel S, Perevalov, Timofey V, Gritsenko, Vladimir A, Hwang, Cheol Seong, Markeev, Andrey M
Format:	Artikel
Sprache:	eng
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